• Title/Summary/Keyword: Sol-Gel processing

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Sol-Gel Processing and Properties of PZT Powders and Thin Films (졸-겔법에 의한 PZT 합성과 박막제조)

  • 오영제;정형진
    • Journal of the Korean Ceramic Society
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    • v.28 no.12
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    • pp.943-952
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    • 1991
  • Lead zirconate titanate(PZT) powders and thin films were prepared from an alkoxide-based solution by sol-gel method. Gelation of synthesized complex solutions, pyrolysis and crystallization behaviors of the dried powder were studied in accordance with a water content and a catalyst. PZT thin films were formed by spin-casting method on silicon and platinum substrates, and characterized. Ester produced from the reactions was completely removed when drying of the gel was finished. Pyrolysis property of the dried PZT gels were changed in order water content, class of catalyst, and quantity of catalyst. Crystalline Pb phase was transiently formed near 250$^{\circ}C$. Basic catalyst is good additive for a formation of perovskite phase in the films, and acidic catalyst for a densified film structure. By the analysis of RBS, Pb element in the PZT films were diffused into silicon substrate, and the pores, may be produced due to local densification around some grains in the films, make an origin of fault in microstructure when holding time goes to be longer at 700$^{\circ}C$.

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Preparation and Characterization of Al-doped ZnO Transparent Conducting Thin Film by Sol-Gel Processing (솔-젤법에 의한 Al-doped ZnO 투명전도막의 제조 및 특성)

  • Hyun, Seung-Min;Hong, Kwon;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.149-154
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    • 1996
  • ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

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Effect of Laser Beam on Structural, Optical, and Electrical Properties of BaTiO3 Nanoparticles during Sol-Gel Preparation

  • Mostafa, Massaud;Ebnalwaled, Khaled;Saied, Hussien A.;Roshdy, Reham
    • Journal of the Korean Ceramic Society
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    • v.55 no.6
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    • pp.581-589
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    • 2018
  • This work concentrated on the effect of different laser beams on the microstructure and dielectric properties of $BaTiO_3$ nanoparticles at different calcinations times during the gelling preparation step. The nanoparticles were prepared by the sol-gel method. A green (1000 mW, 532 nm) and red laser beam (500 mW, 808 nm), were applied vertically at the center of stirring raw materials. The samples were sintered at $1000^{\circ}C$ for 2, 4, and 6 h. X-ray diffraction (XRD) analysis showed that samples prepared under the green laser have the highest purity. The FT-IR spectra showed that the stretching and bending vibrations of TiO bond without any other bonds, which are compatible to the X-ray diffraction (XRD) results. Samples were characterized by transmission electron microscopy (TEM), Scan electron microscopy (SEM), and UV-Visible spectrophotometer. Characterization showed the samples prepared under the green laser to have the highest particle size (~ 50 nm) and transparency for all sintering durations. Laser beam effects on electrical characterization were studied. BT nanoparticles prepared under the green laser show the higher dielectric constant, which was found to increase with sintering temperature.

Characteristics of SBN Thin Films Prepared by Sol-Gel Process (졸겔법으로 제조된 SBN박막의 특성연구)

  • 이동근;김태중;이해욱;이희영;김정주;조상희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1030-1035
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    • 2001
  • Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

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Preparation of Ferroelectric PZT Thin Film by Sol-Gel Processing; (III) Effect of Rapid Thermal Annealing on Microstructures and Dielectric Properties (솔-젤법에 의한 강유전성 PZT 박막의 제조;(III) 급속열처리방법이 미세구조 및 유전특성에 미치는 영향)

  • 김병호;박성호;김병호
    • Journal of the Korean Ceramic Society
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    • v.32 no.8
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    • pp.881-892
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    • 1995
  • Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$\AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{\circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$\mu$C/$\textrm{cm}^2$ and 64kV/cm, respectively.

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Preparation of $Al_2O_3-TiO_2$ Composite Powder from Alkoxides (I) 1. Preparation of $Al_2TiO_5$ by the SOl-gel Method and the effects of Additives (알콕사이드로부터 $Al_2O_3-TiO_2$계 복합분체의 합성(I) 1. Sol-Gel법에 의한 $Al_2TiO_5$ 분말합성과 첨가제의 영향)

  • 정종열;이형민;이홍림
    • Journal of the Korean Ceramic Society
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    • v.33 no.10
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    • pp.1138-1146
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    • 1996
  • Al2TiO5 powder was prepared by the sol-gel processing from th metal alkoxides ; aluminium sec-butoxide (Al(OC4H9)3 and tetraethyl orthotitanate (Ti(OC2H5)4) The particles of Al2TiO5 produced from alkoxides were measured to be below $1.5mutextrm{m}$ and mre than 90% weere below 1 ${\mu}{\textrm}{m}$ however those from commercial alumina and titania were over 0.5-7${\mu}{\textrm}{m}$ and only 60% were below 1${\mu}{\textrm}{m}$ and 90% were below 2.5${\mu}{\textrm}{m}$ Therefore Al2TiO5 powder produced from alkoxides had the narrower distributionin size than that produced from the commercial alumina and titania powders. The addition of mullite or Al2O3 powder to the prepared aluminum titanate inhibited the grain growth and this resulted in decreased and increase in density.

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