• Title/Summary/Keyword: Soda glass

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Sol-gel Derived-highly Transparent c-axis Oriented ZnO Thin Films (졸-겔법에 의한 c-축 배향성을 가진 고투과율 ZnO 박막의 제조)

  • Lee, Young-Hwan;Jeong, Ju-Hyun;Jeon, Young-Sun;Hwang, Kyu-Seog
    • Journal of Korean Ophthalmic Optics Society
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    • v.13 no.1
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    • pp.71-76
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    • 2008
  • Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.

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Study on crystallization of $PbTiO_3$ thin films by the Sol-Gel method (Sol-Gel법을 이용한 $PbTiO_3$ 박막의 결정화에 관한 연구)

  • Kyu Seog Hwang;Byung Wan Yoo;Byung Hoon Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.2
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    • pp.199-209
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    • 1994
  • $PbTiO_3$ thin films were prepared on soda-lime-silica slide glasses, Si-wafer and sapphire substrate by the dip-coating of precursor solution. As starting materials, titanium tetra iso-propoxide and lead acetate trihydrate were used. Then acetylacetone was added to prepare stable sol. The effect of the parameters such as viscosity and composition of sol were investigated. The optical transmittance at visible range, refractive index, IR spectra were measured in varying compositions, thickness and heat treatment temperature. The crystallization of $PbTiO_3$ films were measured by using XRD and SEM. Diffusion of compositions from slide glass to thin film were investigated by using EDX, too. These sols not precipitated for 20 days. Transmittance of $PbTiO_3$ films at visible range were decreased with the increase of thickness and heat treatment temperatures, and were exhibited flat spectra. Pyrochlore type appeared in the films on slide glass and perovskite type appeared in the films on Si-wafer or sapphire at $600^{\circ}C$. Perovskite crystals transformed to $PbTi_3O_7$ phase at $800^{\circ}C$.

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Fabrication of wide-bandgap β-Cu(In,Ga)3Se5 thin films and their application to solar cells

  • Kim, Ji Hye;Shin, Young Min;Kim, Seung Tae;Kwon, HyukSang;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.38-43
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    • 2013
  • $Cu(In,Ga)_3Se_5$ is a candidate material for the top cell of $Cu(In,Ga)Se_2$ tandem cells. This phase is often found at the surface of the $Cu(In,Ga)Se_2$ film during $Cu(In,Ga)Se_2$ cell fabrication, and plays a positive role in $Cu(In,Ga)Se_2$ cell performance. However, the exact properties of the $Cu(In,Ga)_3Se_5$ film have not been extensively studied yet. In this work, $Cu(In,Ga)_3Se_5$ films were fabricated on Mo-coated soda-lime glass substrates by a three-stage co-evaporation process. The Cu content in the film was controlled by varying the deposition time of each stage. X-ray diffraction and Raman spectroscopy analyses showed that, even though the stoichiometric Cu/(In+Ga) ratio is 0.25, $Cu(In,Ga)_3Se_5$ is easily formed in a wide range of Cu content as long as the Cu/(In+Ga) ratio is held below 0.5. The optical band gap of $Cu_{0.3}(In_{0.65}Ga_{0.35})_3Se_5$ composition was found to be 1.35eV. As the Cu/(In+Ga) ratio was decreased further below 0.5, the grain size became smaller and the band gap increased. Unlike the $Cu(In,Ga)Se_2$ solar cell, an external supply of Na with $Na_2S$ deposition further increased the cell efficiency of the $Cu(In,Ga)_3Se_5$ solar cell, indicating that more Na is necessary, in addition to the Na supply from the soda lime glass, to suppress deep level defects in the $Cu(In,Ga)_3Se_5$ film. The cell efficiency of $CdS/Cu(In,Ga)_3Se_5$ was improved from 8.8 to 11.2% by incorporating Na with $Na_2S$ deposition on the CIGS film. The fill factor was significantly improved by the Na incorporation, due to a decrease of deep-level defects.

A Study on Improvement of Recycling Process of Waste Fluorescent Lamps (폐형광등 재활용 공정의 개선 연구)

  • Lee, Gee Hun;Lee, Dong Hoon;Song, Young Jun;Kim, Chang Kwon
    • Resources Recycling
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    • v.29 no.3
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    • pp.61-74
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    • 2020
  • This study was conducted to improve the recycling process of waste fluorescent lamp, and investigate the possibility of using the waste fluorescent lamp glass as a raw material for glass beads, the leaching method of rare earth from the waste phosphor powder, and the possibility of solvent extraction of rare earth from the rare earth leaching solution. The waste phosphor contained 28.9% yttrium oxide, 3.46% cerium oxide, 1.95% europium oxide, 1.76% terbium oxide, and 1.43% lanthanum oxide. As a result of the trial production of glass beads using waste fluorescent lamp glass, it was judged that the production yield and quality were excellent, so that waste fluorescent lamp glass could be used as a raw material for glass beads. The soda roasted waste phosphor was leached in water and thereby the aqueous solution was blown with CO2 to drop the pH to about 7, Then, Al, Si and residual N2CO3 were dissolved, and NaAlCO3(OH)2 and SiO2 were precipitated in the aqueous solution. In the solvent extraction of cyanex272-hydrochloric acid, cyanex272-sulfuric acid, D2EHPA-hydrochloric acid, D2EHPA-sulfuric acid, Ionquest290-hydrochloric acid, Ionquest290-sulfuric acid, p507-hydrochloric acid using xylene as a diluent, the extraction yield of Y, Eu, Ce, La, and Tb are close to 100%. However, in this conditions, the difference in extraction yield for each element, that is, selectivity is 16% or less.

The Effects on The Glass Processing by Alumina Addition in Soda Lime Glass (소다석회유리에서 Alumina첨가제에 따른 제병 공정의 영향)

  • Choi, Young-June;Kim, Jong-Ock;Kim, Taik-Nam
    • The Journal of Engineering Research
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    • v.4 no.1
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    • pp.69-85
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    • 2002
  • The chemical composition of bottle glass is consisted of Na2O-CaO-SiO2. However the cullet is mornally used in order to decrease the melting tsmperature. This induce the productivity of bottle and decreases the cost. The addition of plate glass decreases the Al2O3 content and in fluence the stone phenomenon and devitification in botle glass. Tus the Feldspar is added in order to increase the Al2O3 content when plate cullet was added in melting. The Tridymite crystal was observed over 7.5% Al2O3 contents, which shown as white crystal in appearance. It is Supposed that the Wollastonite Would be occurred in more over 7.5% Al2O3. This fad id well consised With the Litertctures.

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Low-temperature Deposition of Cu(In,Ga)Se2 Absorber using Na2S Underlayer (Na2S 하부층을 이용한 Cu(In,Ga)Se2 광흡수층의 저온증착 및 Cu(In,Ga)Se2 박막태양전지에의 응용)

  • Shin, Hae Na Ra;Shin, Young Min;Kim, Ji Hye;Yun, Jae Ho;Park, Byung Kook;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.2 no.1
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    • pp.28-35
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    • 2014
  • High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.

Field Emission Characteristics of Surface-treated CNT Emitter by Ar Ion Bombardment (아르곤 이온에 의해 표면처리된 CNT 에미터의 전계방출 특성)

  • Kwon, Sang-Jik
    • 전자공학회논문지 IE
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    • v.44 no.2
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    • pp.26-31
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    • 2007
  • A surface treatment was performed after the screen printing of a carbon nanotube paste for obtaining the carbon nanotube field emission array(CNT FEA) on the soda-lime glass substrate. In this experiment, Ar ion bombardment was applied as an effective surface treatment method. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposure by uv light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy. At 100 eV, the emission was highest and as the acceleration energy increases more then 100 eV, the emission decreased. This was due to the removal of CNT itself as well as binders.

Field Emission Properties of Carbon Nanotubes on Metal Binder/Glass Substrate

  • Jo, Ju-Mi;Lee, Seung-Yeop;Kim, Yu-Seok;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.386-386
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    • 2011
  • 탄소나노튜브는 큰 길이 대 직경 비와 뛰어난 전기적 특성으로 인해 차세대 전계 방출 소자로 주목 받고 있다. 실질적인 전계방출 디스플레이로의 응용을 위한 대면적 제작과 유리 기판 사용을 위해 이용되었던 페이스트(paste)법은 높은 전기장 하에서 장시간 전계방출시 탄소나노튜브 전계방출원과 페이스트(paste)간의 낮은 접착력 때문에 발생하는 탄소나노튜브의 탈루현상(omission)과 유기물질(organic paste)에서 발생하는 탈기체(out-gassing) 문제점이 있었다. 최근 이런 문제점을 개선하기 위해 유기물질(organic paste)를 대체하여 금속바인더(metal binder) 물질을 사용한 결과들이 보고되고 있다. 본 연구에서는 유리기판 위에 제작된 탄소나노튜브 전계방출원의 수명 향상을 위하여 금속바인더와 후속 열처리법의 변화에 따른 전계방출 안정성을 분석하였다. 금속바인더는 접합층/ 접착층(soldering layer/ adhesive layer)으로 구성되어 있으며, 일반적인 소다석회유리(soda-lime glass)에 스퍼터(DC magnetron sputtering system)를 이용하여 증착하였다. 접착층은 유리기판과 접합층의 접착력 향상을 위해 사용되며, 접합층은 기판과 탄소나노튜브 전계방출원을 접합하는 역할과 전계방출 측정시 전극이 되기 때문에 우수한 전기 전도성과 내산화성을 필요로 한다. 본 실험에서는 일반적으로 유리기판과 접착력이 좋다고 알려진 Cr, Ti, Ni, Mo을 접착층으로 사용하였으며, 접합성과 전기전도성, 내산화성이 뛰어난 귀금속 계열의 금속을 접합층으로 사용하였다. 탄소나노튜브를 1,2-디클로로에탄(1,2-dichloroethane, DCE)에 분산시킨 용액을 스프레이방법을 이용하여 증착시켰으며, 후속 열처리 방법을 통하여 접합층과 결합시켰다. 금속바인더와 후속 열처리법의 변화에 따른 접착력과 표면형상(morphology)의 변화를 주사전자현미경(scanning electron microscopy)를 이용하여 분석하였으며, 다이오드 타입에 디씨 바이어스(DC bias)를 사용하여 전계방출특성을 측정하였다[1,2].

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KF Post Deposition Treatment Process of Cu(In,Ga)Se2 Thin Film Effect of the Na Element Present in the Solar Cell Performance (KF 후열처리 공정시 CIGS 박막의 Na 원소 존재가 태양전지 셀성능에 미치는 영향)

  • Son, Yu-Seung;Kim, Won Mok;Park, Jong-Keuk;Jeong, Jeung-hyun
    • Current Photovoltaic Research
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    • v.3 no.4
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    • pp.130-134
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    • 2015
  • The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

Codoped ZnO films by a co-spray deposition technique for photovoltaic applications

  • Zhou, Bin;Han, Xiaofei;Tao, Meng
    • Advances in Energy Research
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    • v.2 no.2
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    • pp.97-104
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    • 2014
  • A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.