• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.303-305
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• 1996

The electrical Properties of ZnO added TiO$_2$were investigated by using the complex impedance measurement and voltage-current source and measurement unit. The electrical conductivity of ZnO added TiO$_2$decrease with increasing the content of ZnO. The frequency-dependent Ac conductivity increase as frequency increase. Also, the trend of capacitances is similar to the AC conductivity. The semicircles of impedance spectrum increase with increasing ZnO contents. The decrease of electrical conductivity seems to be the effect of ZnO acceptor adding.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.25-25
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• 2006

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.231-232
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• 2014

본 연구는 준비된 쿼츠(Quartz)기판 위에 RF-스퍼터링을 이용하여 Zn와 $SnO_2$를 이용하여 다층구조 박막을 증착하고 열처리를 진행하였다. 증착 과정에서 Zn 증착시간을 조절함으로써 Zn 층의 증착 두께를 조절하고 각각의 구조에서 Zn층의 두께가 다층박막의 특성의 변화를 관찰하였다. 박막의 결정학적 특성을 관찰하기 위해 XRD를 통하여 구조적 특성을 확인 하고 분석하였다.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.301-307
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• 2014

We have fabricated $SnO_2$/Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.99-104
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• 1992

The permeability vs. temperature curve, the loss factor and the microstructure of a commercial Mn-Zn ferrites were investigated by X-ray diffractometer, SEM and LCR meter, where the additives, such as $SnO_{2}$ and $GeO_{2}$, were added to the main composition. Their wt% were 0.05, 0.3 and 1.0, respectively. When the content of additives increased, the SPM (Secondary Peak Maximum) of the permeability moved from $80^{\circ}C$ to below the room temperature. This movement, without the significant change of the microstructure, is because Sn and Ge, having the different ionic radius, were soluble in the matrix. There was no variation of the permeability with the frequency up to 100 kHz. And the loss factor showed the maximum value at 10 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.445-448
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• 2016

Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: $7{\mu}s$ and rise time: $13{\mu}s$) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.47-53
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• 2005

The E.M.F. of the galvanic cell with fused salt was measured to determine the activities of zinc at 720-860 K over the entire composition range of liquid Zn-In and Zn-Sn alloys. The cell used was as follows: $$(-)W{\mid}Zn(pure){\mid}Zn^{2+}(KCl-LiCl){\mid}Zn(in\;Zn-In\;or\;Zn-Sn\;alloy){\mid}W(+)$$ The activities of zinc in the alloys showed positive deviation from Raoult's law over the entire composition range. The activity of cadmium and some thermodynamic functions such as Gibbs free energy, enthalpy and entropy were derived from the results by the thermodynamic relationship. The comparison of the results and the literature data was made. The liquid Zn-In and Zn-Sn alloys are found to be close tn the regular solution. The concentration fluctuations in long wavelength limit, $S_{cc}(o)$, in the liquid alloy were calculated from the experimental results.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.719-725
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• 1995

ZST powders were synthesized by coprecipitation of (Zr4+, Ti4+)-hydroxide in the presence of SnO2 particles. Zn(NO3)2 was used as a sintering additive, and according to the adding sequence, sintering and dielectric properties were investigated. Sintered densities of ZST prepared by adding Zn(NO3)2 before calcination were a little higher than those added after calcination, and dielectric properties of the specimen added by Zn(NO3)2 after calcination were better (sintered at 125$0^{\circ}C$/2 h ; Q$\times$f(GHz)=49, 000, $\varepsilon$r=41) than before calcination (Q$\times$f(GHz)=42, 000, $\varepsilon$r=39.5). Through the observation of TEM, it was identified that the cause was due to the difference of the degree of Zn2+ diffusion into grains. With increasing sintering time from 2 to 8 hrs, grain size was doubled and dielectric properties were somewhat deteriorated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.91-92
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• 2007

In-Sn-Zn-O (ISZO)박막과 In-Zn-Sn-O (IZSO)박막은 상온에서 2개의 캐소드 (DC, RF)를 이용하여 마그네트론 2원 동시 방전법에 의해 polyethylene terephthalate (PET)기판 위에 실온에서 증착되었다. ISZO 박막의 경우, Zn함량이 증가함에 따라 비저항은 증가하였지만, Zn원자의 도입에 의해 표면 조도는 개선되었다. 반면, IZSO 박막의 경우, 최저비저항 ($3.17$ ${\times}$ $10^{-4}$ ${\Omega}cm$)은 $SnO_2$ 타켓의 RF power 40W에서 얻어졌지만, Sn원자의 도입에 의해 표면 조도는 거칠어졌다. XRD 측정 결과 모든 박막은 비정질 구조로 사료되고, 가시광선 영역에서 80% 이상의 높은 투과율을 보였다.