• 한국초전도ㆍ저온공학회논문지
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• 제18권4호
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• pp.1-4
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• 2016

We investigated the relation between the Cu-O bond length and the superconducting properties of $BaSnO_3$ (BSO)-added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films by using extended x-ray absorption fine structure (EXAFS) spectroscopy. 4 wt.% $BaSnO_3$ (BSO) added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films with varying thickness from $0.2{\mu}m$ to $1.0{\mu}m$ were fabricated by using pulsed laser deposition (PLD) method. The transition temperature ($T_c$) and the residual resistance ratio (RRR) of the GdBCO films increased with increasing thickness up to $0.8{\mu}m$, where the crystalline BSO has the highest peak intensity, and then decreased. This uncommon behaviors of $T_c$ and RRR are likely to be created by the addition of BSO, which may change the ordering of GdBCO atomic bonds. Analysis from the Cu K-edge EXAFS spectroscopy showed an interesting thickness dependence of ordering behavior of BSO-added GdBCO films. It is noticeable that the ordering of Cu-O bond and the transition temperature are found to show opposite behaviors in the thickness dependence. Based on these results, the growth of BSO seemingly have evident effect on the alteration of the local structure of GdBCO film.

• 한국광학회지
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• 제14권3호
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• pp.343-348
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• 2003

자체 제작한 고밀도(이론 밀도의 99%) ITO(I $n_2$ $O_3$:Sn $O_2$=90 wt%) 타깃과 직류 마그네트론 스퍼터링 방법을 이용하여 산소분압 $P_{o_{2}}$ (0 $P_{o_{2}}$ $\leq$$10^{-5}$ torr)와 성장 온도 Ts(10$0^{\circ}C$ $T_{s}$$\leq$35$0^{\circ}C$)를 변화시키면서 ITO 박막을 제작하고 전기적, 광학적 특성을 조사하였다. ITO박막의 비저항은 제작 온도가 증가함에 따라 감소하다가 $T_{s}$=30$0^{\circ}C$일 때 최저 비저항값 0.30 mΩ.cm를 나타내었고 $T_{s}$>30$0^{\circ}C$ 이상에서는 약간 증가하였다. $T_{s}$=30$0^{\circ}C$에서 제작한 ITO 박막의 최대 전하 농도는 6.6$\times$$10^{20}$ /㎤이었다. $T_{s}$를 고정하고 ITO 박막 제작 시 사용한 산소분압이 증가함에 따라 전하농도, 전하유동도는 급격하게 감소하여 비저항이 크게 증가하는 것으로 나타났다 ITO박막의 최저 비저항과 최대 전하 유동도는 각각 0.3 mΩ.cm와 39.3 $\textrm{cm}^2$/V.s였다. 또한 가시광 영역 (400~700 nm)에서 ITO박막의 광투과도는 80~90%로 높게 나타났다.나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Current Photovoltaic Research
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• 제1권2호
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• pp.82-89
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• 2013

$Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.

• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.173-173
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• 1996

• 한국재료학회지
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• 제31권11호
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• pp.619-625
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• 2021

Cu₂ZnSn(S,Se)₄ (CZTSSe) based thin-film solar cells have attracted growing attention because of their earth-abundant and non-toxic elements. However, because of their large open-circuit voltage (V_oc)-deficit, CZTSSe solar cells exhibit poor device performance compared to well-established Cu(In,Ga)(S,Se)₂ (CIGS) and CdTe based solar cells. One of the main causes of this large V_oc-deficit is poor absorber properties for example, high band tailing properties, defects, secondary phases, carrier recombination, etc. In particular, the fabrication of absorbers using physical methods results in poor surface morphology, such as pin-holes and voids. To overcome this problem and form large and homogeneous CZTSSe grains, CZTSSe based absorber layers are prepared by a sputtering technique with different RTA conditions. The temperature is varied from 510 ℃ to 540 ℃ during the rapid thermal annealing (RTA) process. Further, CZTSSe thin films are examined with X-ray diffraction, X-ray fluorescence, Raman spectroscopy, IPCE, Energy dispersive spectroscopy and Scanning electron microscopy techniques. The present work shows that Cu-based secondary phase formation can be suppressed in the CZTSSe absorber layer at an optimum RTA condition.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.367-367
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• 2014

Transparent conductive oxides (TCOs) 박막은 가시광선영역에서의 높은 투과율과 낮은 저항 특성을 동시에 갖고 있어 최근 smart windows, solar cells, liquid crystal displays (LCD), organic light emitting devices (OLED)등과 같은 최첨단 기기에 필수적인 구성요소로 활발히 사용되고 있다. 따라서, 현재까지 FTO ($SnO_2:F$), ITO ($In_2O_3:Sn$), ATO ($SnO_2:Sb$)등과 같은 다양한 TCO들이 많은 연구자들에 의해 연구되고 있다. 그 중 ITO는 우수한 전기적(${\sim}10^{-4}{\Omega}cm$) 및 광학적(~85%) 특성 때문에 현재 상업적으로 활발히 응용되고 있는 대표적인 물질이다. 하지만 ITO의 주된 구성요소인 indium은 제한적인 매장량과 과도한 소비량 때문에 원가가 비싸다는 문제점이 있다. 반면에, ATO는 우수한 전기적(${\sim}10^{-3}{\Omega}cm$) 및 광학적(~80%) 특성뿐만 아니라 구성물질들의 매장량이 풍부하여 ATO의 원가가 저렴하다는 장점을 가지고 있어 현재 ITO을 대체 할 수 물질로 관심 받고 있다 [1]. 지금까지 우수한 특성을 갖는 ATO박막을 합성하는 방법으로 sol-gel spin coating, sputtering, spray pyrolysis, chemical vapor deposition (CVD)등이 알려져 있다. 이 중에서도, sol-gel spin coating과 spray pyrolysis은 solution기반의 합성법으로 분류되며 합성과정이 간단하고 비용이 저렴하다는 장점이 있고 현재까지 많은 연구가 보고되었다. 그러나, 진공기반이 아닌 우수한 특성을 갖는 solution기반의 ATO박막을 합성하기 위해서는 새로운 합성법의 개발이 학문적으로나 산업적으로도 매우 중요한 이슈이다. 따라서, 본 연구에서는 electrospray을 활용하여 solution기반의 ATO박막을 처음으로 합성하였다. 게다가 ATO박막에 열처리온도에 따른 구조, 화학, 전기, 광학적 특성을 확인하기 위하여 X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), transmission electron microscopy (TEM), Hall Effect Measurement System, UV spectrophotometer를 사용하였다. 이러한 실험 결과들을 바탕으로 electrospray을 통해 합성된 solution기반의 ATO박막에 자세한 특성을 본 학회에서 다루도록 하겠다.

• 한국재료학회지
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• 제23권3호
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.