• 한국재료학회지
• /
• 제10권11호
• /
• pp.778-783
• /
• 2000

고주파 스피터 방법으로 제조된 SnO$_2$감지막 위에 에어로졸 화염 증착법으로 알루미나 표면 보호층을 증착하여 SnO$_2$박막 가스 센서의 감지 특성에 미치는 영향에 대햐여 조사하였고, 표면 보호층에 귀금속 Pt를 도핑하여 Pt의 함량이 CO 및 CH(sub)4 가스들의 선택성에 미치는 영향에 대하여 조사하였다. SnO$_2$박막은 R.F power 50 W, 공정 압력 4 mtorr, 기판온도 20$0^{\circ}C$에서 30분간 0.3$\mu\textrm{m}$ 두께로 Pt 전극 위에 제조하였고, 질산알루미늄(Al(NO$_3$).9$H_2O$) 용액을 희석하여 에어로졸 화염증착법으로 알루미나 표면 보호층을 만든후 $600^{\circ}C$에서 6시간동안 산소분위기에서 열처리하였다. 알루미나 표면 보호층이 증착된 SnO$_2$가스 센서소자의 경우 보호층이 없는 가스 센서와 비교하여 CO 가스에 대한 감도는 매우 감소하였으나 CH$_4$가스에 대한 감도 특성은 순수한 SnO$_2$센서 소자와 비슷하였다. 결과적으로 보호층을 이용하여 CH$_4$가스에 대한 상대적인 선택성 증가를 이룰 수 있었다. 특히 표면 보호층에 Pt가 첨가된 센서 소자의 경우 CO 가스에 대해서는 낮은 감도 특성을 나타내었으나 CH$_4$에 대한 감도는 매우 증가하여 CH$_4$가스의 선택성을 더욱 증대시킬 수 있었다. CH$_4$가스 선택성 향상에 미치는 알루미나 표면 보호층과 Pt의 역할에 대하여 고찰해 보았다.

• 한국전기전자재료학회논문지
• /
• 제25권8호
• /
• pp.580-583
• /
• 2012

The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.

• 한국전산유체공학회:학술대회논문집
• /
• 한국전산유체공학회 2010년 춘계학술대회논문집
• /
• pp.567-570
• /
• 2010

With continuously increasing flat panel display size, uniformity of thin film deposition has been drawing more attentions and associated fabrication methodologies are being actively investigated. Since the convective flow field of mixture gas plays a significant role for deposition characteristics of thin film in an APCVD system, it is greatly important to maintain uniform distribution and consistent concentration of mixture gas species. In this paper, computational study has been performed for the improvement of flow uniformity of mixture gas in an APCVD reactor during thin film deposition process. A diffuser slit has bee designed to spread the locally concentrated gas flow exiting from the flow distributor. A uniform flow distributor has been developed which has less dependency on operating conditions for global flow uniformity

• 대한화학회지
• /
• 제34권6호
• /
• pp.600-605
• /
• 1990

광전기화학쎌, ITO/SnO$2$/rose bengal, NaClO$4$/Pt을 이용하여 들뜬 rose bengal로부터 박막 반도체 SnO$2$의 전도띠로 주입되는 전류의 크기를 조사하였다. 초감응제로써 urea를 첨가하여 광조사 시간의 경과에 따라 광전류는 증가하다가 일정시간 후에는 계속 감소하는 특성을 나타내었다. Urea를 포함하고 있는 염료용액을 분광학적인 방법으로 분석한 결과, 광화학 반응으로 염료의 농도는 시간에 따라 감소하지만 염료회합(dye aggregation)이 전류의 증가와 관련이 있는 것으로 나타났다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.145-145
• /
• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• 센서학회지
• /
• 제31권5호
• /
• pp.348-352
• /
• 2022

Hydrogen gas (H₂) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H₂ gas sensor with high performance. In this paper, we confirmed that H₂ gas detection ability of SnO₂ based H₂ gas sensor along with thermal treatment effect of SnO₂. Proposed SnO₂ based H₂ gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO₂ thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H₂ gas detection ability is estimatied by measuring output current of H₂ gas sensor. Based on experimental results, fabricated H₂ gas sensor with SnO₂ thin film which is thermally treated at 700 ℃ has a superior H₂ gas detection ability, and it can be expected to utilize at the practical applications.

• 한국재료학회지
• /
• 제33권11호
• /
• pp.475-481
• /
• 2023

Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO₂ applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO₂ as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO₂ showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO₂ layer was 0.75 mA/cm² higher than that of the spin coated SnO₂. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO₂. Therefore ALD SnO₂ is a candidate as a ETL for use in PSC vacuum deposition.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.307.1-307.1
• /
• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• 한국재료학회지
• /
• 제13권7호
• /
• pp.442-446
• /
• 2003

Tin dioxide ($SnO _2$) thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition. A few hillocks like a cauliflower were observed and the number of hillock on thin film surface increased with annealing temperature in air atmosphere. The oxygen content and the binding energy during air annealing at$ 500^{\circ}C$ came to close the stoichiometric $SnO_2$. The cauliflower hillocks seem to be the result of the continuous migration of the tiny grains to release the stress of an expanded grain. Sensitivity of CO gas depended on annealing temperature and increased with increasing annealing temperature.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 추계학술발표대회
• /
• pp.50.1-50.1
• /
• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).