• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.563-566
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• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).

• 센서학회지
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• 제9권3호
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• pp.242-247
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• 2000

10 mole%의 과잉 PbO가 첨가된 타겟을 이용하여 $(La_{0.5}Sr_{0.5})CoO_3(LSCO)/Pt/Ti/SiO_2/Si$ 위에 RF 마그네트론 스퍼터링 방법을 이용하여 $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3(PNZST)$ 박막을 증착시켰다. $500^{\circ}C$의 기판온도, 80W의 RF power에서 증착된 박막은 급속열처리(RTA)후에 페로브스카이트 상으로 결정화되었다. $650^{\circ}C$, 공기중에서 10초 동안 열처리된 박막이 가장 우수한 결정성과 전기적 특성을 나타내었다. 이러한 박막으로 제작된 PNZST 커패시터는 약 $20\;{\mu}C/cm^2$ 정도의 잔류분극과 약 50 kV/cm 정도의 항전계를 나타내었다. 또한, $2.2{\times}10^9$의 스위칭 후에도 잔류분극의 감소는 10% 미만이었다.

• 센서학회지
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• 제11권1호
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• pp.48-53
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• 2002

강유전 물질인 $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) 박막을 10 mole%의 과잉 PbO가 첨가된 타겟을 이용하여 $La_{0.5}Sr_{0.5}CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si 기판상에 RF 마그네트론 스퍼터링 방법으로 증착하였다. Ti의 조성비를 변화시키면서 증착된 박막에 대하여 그 결정성과 전기적 특성을 조사하였다. 80 W의 RF 전력, $500^{\circ}C$의 기판온도에서 증착한 후, $650^{\circ}C$, 공기중에서 10초 동안 급속 열처리된 박막이 가장 우수한 페로브스카이트상으로 결정화되었다. 또한. Ti의 조성비가 10 mole%를 가지는 PNZST이 가장 우수한 결정성과 강유전 특성을 나타내었다. 이러한 박막으로 제작된 PNZST 커패시터는 약 $20\;{\mu}C/cm^2$정도의 잔류분극과 약 50 kV/cm 정도의 항전계를 나타내었으며, $2.2{\times}10^9$의 스위칭 후에도 잔류분극의 감소는 10% 미만이었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.33.1-33.1
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• 2009

Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3$-xBa($Ti_{0.9}Sn_{0.1})O_3$ [NKN-BTS-100x] ceramics doped with 1 mol% $MnO_2$ have been prepared by the conventional solid state method and their structural and piezoelectric properties were investigated. The NKN-BTS-100x ceramics exhibited a dense and homogeneous microstructure when they were sintered at $1030-1150^{\circ}C$. Grain growth was observed for the specimen sintered at relatively low temperature of $1050^{\circ}C$. A tetragonal/orthorhombic morphotropic phase boundary (MPB) in the perovskite structure was also appeared for the NKN-BTS-100x ceramics (0.04$1050^{\circ}C$. The enhanced piezoelectric properties in the NKN-BTS ceramics with a MPB composition were obtained. Especially, for the NKN-BTS-6 ceramics, a high dielectric constant (${\varepsilon}^T_3/\varepsilon_0=1,400$), piezoelectric constant ($d_{33}=237$) and electromechanical coupling factor ($k_p=0.42$) were obtained.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1027-1032
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• 2002

(Pb$\_$0.4/Ca$\_$0.6/)(Fe$\_$1/2/Nb$\_$1/2/)O$_3$ system was modified by 10 mol% Pb(Zn$\_$1/2/W$\_$1/2/)O$_3$ addition and their sinterability and microwave properties were investigated as a function of the amount of flux (0.975PbO-0.025SnO$_2$). With increasing flux content, single perovskite phase was maintained up to 3 wt% flux addition and further addition led to the presence of Pb-rich second phase which was confirmed by EDS analysis. The apparent densities of PCFN-PZW specimen increased and showed maximum values at 2.5 wt% flux addition for the Ts=1000$^{\circ}C$ and 2.0wt% flux addition for the Ts=1050$^{\circ}C$, respectively. The dielectric constant and Q$.$f values strongly depended on the variation of density and microstructure, where the optimum values of $\varepsilon$$\_$r/ = 91.95, Q$.$f = 5938GHz, TCF = +8.15ppm/$^{\circ}C$ were obtained for the 2.5wt% flux added PCFN-PZW specimen sintered at 1000$^{\circ}C$ for 4h.

• 자원환경지질
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• 제22권4호
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• pp.327-339
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• 1989

상동지역(上東地域), 순경(順鏡) 함광석(含鑛石) 페그마타이트에서는 석석(錫石)을 비롯하여 탄탈라이트-콜롬바이트, 그리고 함(含)Ta-금홍석(金紅石) 등(等)이 산출(産出)된다. 석석(錫石)은 산포상(散布狀)의 미정질(微晶質)에서부터 거정질(巨晶質)에 이르기까지 다양(多樣)하며, 일반적(一般的)으로 탄탈라이트-콜롬바이트, 함(含)Ta-금홍석(金紅石)과 공존(共存)하고 있다. 탄탈라이트-콜롬바이트는 미세맥(微細脈) 혹은 용리상능(溶離狀能)로서 석석결정(錫石結晶)에 배태(胚胎)되며 간혹 독립광물(獨立鑛物)로서 석영(石英)에 수반(隨伴)되는 경우가 있다. 함(含)Ta-금홍석(金紅石)은 상기(上記)한 광물(鑛物) 중 최후기상(最後期相)으로서 석영(石英)을 수반(隨伴)하는 세맥상(細脈狀)으로 산출(産出)된다. 석석(錫石)에서 ${\Sigma}Ta^{+5}$, $Nb^{+4}$, $Ti^{+4}$ 및 Fe*은 $Sn^{+4}$과 부(負)의 상관관계(相關關係)로 치환(置換)에 전적(全的)으로 관계(關係)하고 있으며, 0.01-0.15mol.% 까지 치환(置換)하고 있다. $Ta^{+5}$와 $Nb^{+5}$는 Fe* 쌍치환관계(雙置換關係)이며 $Ta^{+5}$는 $Ti^{+4}$와 화학적(化學的) 친화관계(親化關係)로서 밀접(密接)히 수반(隨伴)된다. 이상구조(異常構造)가 발달(發達)된 석석(錫石)은 결정(結晶)의 내핵(內核)에서부터, 외각(外殼)으로 갈수록 Ta/Nb 비(比)가 증가(增加)하며, 이는 온도(溫度)의 하강(下降)에 따른 Ta의 참여효과(參與效果) 가 높아지는데 기인(起因)된다. 함(含)Ta-금홍석(金紅石)은 $TiO_2$:57.41-86.00wt.%, $Ta_2O_5$:5.08-21.51 wt.%, $Nb_2O_5$:1.60-6.81 wt.%, FeO*:2.06-5.85 wt.% 그리고 $SnO_2$:1.74-10.35 wt.%의 화학조성(化學造成)으로 구성(構成)되어 있다. 본 광물(鑛物)은 탄탈라이트-콜롬바이트에 비(比)하여 Ta/Ta+Nb의 비(比)가 높다. 탄탈라이트-콜롬바이트의 화학조성(化學造成)에 의하면, Ta/Ta+Nb가 증가(增加)하고, Mn/Mn+Fe*는 감소(減少)하는 분결경향(分結傾向)을 보여 주고 있다. 이것은 분결작용(分結作用)이 진행(進行)되는 동안 Ta의 활동도(活動度)가 증가(增加)되는 것으로 Li과 F가 고갈(枯渴)되고, Be과 P가 풍부(豊富)한 환경(環境)을 지시(指示)하는 것이다. 이와같은 환경(環境)은 순경(順鏡) 페그마타이트에 Li과 F 운모(雲母)의 부재(否在)와 탄탈라이트와 녹주석(綠柱石)이 석석(錫石) 광화작용(鑛化作用)과 밀접(密接)히 수반(隨伴)되는 것과 일치(一致)하는 것이다. 본 페그마타이트는 Ta-Be 복합형(複合型)의 페그마타이트로서 석석(錫石)은 탄탈라이트-콜룸바이트, 녹주석(綠柱石) 등(等)의 분결작용(分結作用)을 수반(隨伴)하며 형성(形成)되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 A
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• pp.141-143
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• 1995

The design of a 16 tesla/ 45mm bore superconducting magnet is presented. The system consists of an 8.2 tesla(at 4.2K) outer NbTi coil with a bore I.D. of 261mm, a winding O.D. of 453mm and the length of 430mm which is connected in series with a 5.6 tesla(at 4.2K) middle and a 4.7 tesla(at 4.2K) inner insert coil constructed of multifilamentary $Nb_{3}Sn$. The middle and inner insert coil will be reacted after winding. Also, epoxy impregnation will be accomplished at $Nb_{3}Sn$ coils using a low viscosity crack resistant epoxy which is forced into the coil with a series of vacuum and over atmosphere pressure cycle.