• Korean Journal of Materials Research
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• v.22 no.7
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• pp.352-357
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• 2012

$SnO_2$-mixed and Sn-doped $TiO_2$ nanoparticles were synthesized via a hydrothermal process. $SnO_2$-mixed $TiO_2$ nanoparticles prepared in a neutral condition consisted of anatase $TiO_2$ nanoparticles(diamond shape, ~25 nm) and cassiterite $SnO_2$ nanoparticles(spherical shape, ~10 nm). On the other hand, Sn-doped $TiO_2$ nanoparticles obtained under a high acidic condition showed a crystalline phase corresponding to rutile $TiO_2$. As the Sn content increased, the particle shape changed from rod-like(d~40 nm, 1~200 nm) to spherical(18 nm) with a decrease in the particle size. The peak shift in the XRD results and a change of the c-axis lattice parameter with the Sn content demonstrate that the $TiO_2$ in the rutile phase was doped with Sn. The photocatalytic activity of the $SnO_2$-mixed $TiO_2$ nanoparticles dramatically increased and then decreased when the $SnO_2$ content exceeded 4%. The increased photocatalytic activity is mainly attributed to the improved charge separation of the $TiO_2$ nanoparticles with the $SnO_2$. In the case of Sn-doped $TiO_2$ nanoparticles, the photocatalytic activity increased slightly with the Sn content due most likely to the larger energy bandgap caused by Sn-doping and the decrease in the particle size. The $SnO_2$-mixed $TiO_2$ nanoparticles generally exhibited higher photocatalytic activity than the Sn-doped $TiO_2$ nanoparticles. This was caused by the phase difference of $TiO_2$.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.408-411
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• 2010

Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.

• Journal of the Korean Chemical Society
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• v.24 no.3
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• pp.183-192
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• 1980

Oxidation reactions of carbon monoxide on $SnO_2$, Sb-doped $SnO_2$, and Pt catalyst were studied. The oxidation reaction was found to be first order with respect to both CO and O$_2$ on $SnO_2$ and Sb-doped $SnO_2$ catalysts, and to be of half order on Pt catalyst. A small addition of Sb to $SnO_2$ (depant composition: 0.05∼0.1 mol %) increased the rate of oxidation. On the contrary, a large addition decreased the rate. From the rate expression of oxidation on Pt catalyst, the inhibition effect of carbon monoxide on the rate of oxidation was deduced. The experimentally obtained activatio energies were 5.7 kcal for the Sb doped $SnO_2$ catalyst (dopant composion: 0.05 mole%), and 6.4 kcal for the Pt catalyst. A possible reaction mechanism was proposed from the experimentally obtained kinetic data.

• Bulletin of the Korean Chemical Society
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• v.19 no.1
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• pp.107-109
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• 1998

The $SnO_2$, Sn-doped $In_2O+3\; and \;Ce-doped\; TiO_2$ films have been prepared by RF sputtering method, and their opto-electrochemical properties were investigated in view of the applicability as counter electrodes in the electrochromic window system. These oxide films could reversibly intercalate $Li^+$ ions owing to the nanocrystalline texture, but remained colorless and transparent. The high transmittance of the lithiated films could be attributed to the prevalence of the $Sn^{4+}/Sn^{2+}\; and\; Ce^{4+}/Ce^{3+}$ redox couples having 5s and 6s character conduction bands, respectively. For the Ce-doped $TiO_2$ film, $(TiO_2)_{1-x}(CeO_2)_x$, an optimized electrochemical reversibility was found in the film with the composition of x = 0.1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.701-708
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• 1993

Pd-doped SnO2 thin films for hydrogen gas sensing were fabricated by reactive fo magnetron sputtering and were studied on effects of film thickness and Pd doping content. Pd doping caused the optimum sensor operation temperature to reduce down to ~25$0^{\circ}C$ and also enhanced gas sensitivity, compared with undoped SnO2 film. Gas sensitivity depended on the film thickness. The sensitivity increased with decreasing the film thickness, showing maximum sensitivities at the thickness of 730$\AA$ and 300~400$\AA$ for the undoped SnO2 and the Pd-doped SnO2 film, respectively. Further decrease of the film thickness beyond these thickness ranges, however, resulted in the reduction of sensitivity again.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.154-158
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• 2021

The optical transmittance of Mn-doped SnO₂ monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O₂/Ar+O₂ concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O₂/Ar+O₂ gas concentration ratio. Based on XPS spectra analysis, the Sn 3d_5/2 peak of Mn-doped SnO₂ single layer shifted slightly from 486.40 to 486.58 and O_1s peak also shifted from 530.20 to 530.33 eV with increase the O₂/Ar+O₂ concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO₂ coexisted in the sputtered Mn-doped SnO₂ monolayer film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.622-626
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• 2010

Cu doped $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $500^{\circ}C$ in air, respectively. Structural properties of $SnO_2$ by X-ray diffraction showed (110), (101) and (211) dominant tetragonal phase. The effects of catalyst Cu in $SnO_2$-based gas sensors were investigated. Sensitivity of $SnO_2$:Cu sensors to 2,000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas was investigated for various Cu concentration. The highest sensitivity to $CO_2$ gas and $H_2S$ gas of Cu doped $SnO_2$ gas sensors was observed at the 8 wt% and 12 wt% Cu concentration, respectively. The improved sensitivity in the Cu doped $SnO_2$ gas sensors was explained by decrease of electron depletion region in Cu and $SnO_2$ junction, and increase of reactive oxygen and surface area in the $SnO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.956-960
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• 2010

CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.38-43
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• 1996

A coprecipitation method was used for preparing Ca and Pt doped $SnO_2$ fine powder. Components of the powder were investigated by XPS and SIMS. Crystallite size and specific surface area were investigated by TEM, XRD, and BET analysis. $SnO_2$(Ca)/Pt based thick film devices were prepared by a screen printing technique for methane gas detection. Then sensing characteristics of the devices were investigated. As Ca and Pt added, the crystal growth of $SnO_2$ was suppressed during calcining and sintering, and the sensitivity of $SnO_2$(Ca)/Pt thick film to methane gas was enhanced. For the Pt doped $SnO_2$ fine particle, the thick film device shows sensitivity of about 83% to 2000 ppm methane gas at an operating temperature of >$400^{\circ}C$.