• Korean Journal of Materials Research
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• v.10 no.8
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• pp.525-531
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• 2000

Sb-doped tin oxide films were deposited on Cornig glass 1737 substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The films deposited at different reaction parameters were then examined by using XRD and AFM. The relatively good crystalline thin film was formed at $450^{\circ}C$, input gas ratio R[$P_{SbCl}P_{{SnCl}_4}$]=1.12 and r.f. power 30W. The surface roughness of the film formed by PECVD compared to TCVD was more smooth. Higher concentration of Sb dopant, lower deposition temperature, and thinner thickness of deposited film led to de-creasing surface roughness of the formed thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.269-269
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• 2010

$SnO_2$ 나노선은 n-type의 전기적 특성과 우수한 광 특성을 보이며, 전자소자, 광소자 뿐 아니라 다양한 종류의 가스 센서 등에 응용되고 있다. 그러나 $SnO_2$ 나노선은 공기중에서 전기적으로 불안정한 특성을 보이며, 도핑을 하지 않은 나노선 소자에서는 전자의 모빌러티가 높지 않다는 단점을 갖고 있다. 이를 개선하고자 본 연구에서는 화학기상증착법 (Chemical Vapor Deposition)으로 Sb을 도핑한 $SnO_2$ 나노선을 성장하여 전계방출효과 트랜지스터 (field effect transistor: FET)를 제작하여 전기적 특성과 UV 반응성의 변화를 측정하였다. Sb 도핑 양을 늘려감에 따라 전기적 특성이 반도체 특성에서 점점 금속 특성으로 변하는 것과 게이트 전압의 영향을 적게 받는 것을 확인하였다. 또한 도핑을 해준 $SnO_2$ 나노선의 경우 UV 반응과 회복 시간이 기존에 비하여 크게 감소하여 UV 센서에 더욱 적합해진 것을 확인하였다. 또한, 슬라이딩 트랜스퍼 공정을 이용하여 나노선을 원하는 기판에 정렬된 상태로 전이할 때 도핑한 나노선은 표면특성의 변화로 정렬도가 크게 감소하는 것을 확인하였고, 기판에 윤활제를 사용하여 정렬도를 높일 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.126-127
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• 2007

Sn-filled and Fe-doped $CoSb_3$ skutterudites were synthesized by encapsulated induction melting. Single ${\delta}$-phase was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conduction. Electrical resistivity increased with increasing temperature, which shows that the $Sn_zCo_3FeSb_{12}$ skutterudite is highly degenerate. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be z=0.3 in the $Sn_zCo_3FeSb_{12}$ system.

• Solar Energy
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• v.18 no.2
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• pp.137-144
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• 1998

Tin oxide films deposited by spray pyrolysis have defects and preferred orientations according to the temperature of substrate. The growth of crystalline deposits began at the substrate temperature of $300^{\circ}C$. With increasing substrate temperature the plane (200) groved preferentially and above $400^{\circ}C$, planes of higher indices. Grain size increased with increasing substrate temperature up to $400^{\circ}C$. Undoped film is composed of Sn and O, and contains oxygen vacancies. Film doped with antimony has defects such as oxygen vacancies, antimony substituted on Sn and chlorine on oxygen.

• Journal of Environmental Science International
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• v.18 no.1
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• pp.61-72
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• 2009

Fabrication and oxidants production of 3 or 4 components metal oxide electrode, which is known to be so effective to destruct non-biodegradable organics in wastewater, were studied. Five electrode materials (Ru as main component and Pt, Sn, Sb and Gd as minor components) were used for the 3 or 4 components electrode. The metal oxide electrode was prepared by coating the electrode material on the surface of the titanium mesh and then thermal oxidation at $500^{\circ}C$ for 1h. The removed RhB per 2 min and unit W of 3 components electrode was in the order: Ru:Sn:Sb=9:1:1 > Ru:Pt:Gd=5:5:1 > Ru:Sn=9:1 > Ru:Sn:Gd=9:1:1 > Ru:Sb:Gd=9:1:1. Although RhB decolorization of Ru:Sn:Sb:Gd electrode was the highest among the 4 components electrode, the RhB decolorization and oxidants formation of the Ru:Sn:Sb=9:1:1 electrode was higher than that of the 3 and 4 components electrode. Electrogenerated oxidants (free Cl and $ClO_2$) of chlorine type in 3 and 4 components electrode were higher than other oxidants such as $H_2O_2\;and\;O_3$. It was assumed that electrode with high RhB decolorization showed high oxidant generation and COD removal efficiency. OH radical which is electrogenerated by the direct electrolysis was not generated the entire 3 and 4 components electrode, therefore main mechanism of RhB degradation by metal oxide electrode based Ru was considered indirect electrolysis using electrogenerated oxidants.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2007.05a
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• pp.370-374
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• 2007

난분해성 유기물 처리에 적절한 불용성 전극을 선정하고 성능을 평가하기 위하여 1-3 성분계 전극을 이용하여 양이온 염료인 Rhodamine B (RhB)의 전기분해 처리에서 다음의 결론을 얻었다. 1) 반응 2분 후 RhB 농도를 고찰한 결과 RhB 농도감소는 Ru-Sn-Ti/Ti ${\fallingdotseq}$ Ru-Sn-Sb/Ti > Ir-Sn-Sb/Ti > Sn-Sb/Ti > Ru/Ti > Ir/Ti > Pt/Ti의 순서로 나타나 3성분계 > 2성분계 > 1성분계 전극의 순서로 나타났다. Ru를 사용한 전극이 Ir을 사용한 전극보다 1성분계와 3성분계 모두 성능이 우수한 것으로 나타났다. 기존 전극으로 가장 많이 사용되고 있는 Pt 전극의 성능은 가장 떨어지는 것으로 나타났다. 2) RhB 초기 농도감소 속도는 전극 간격이 좁은 것이 유리한 것으로 나타났으나 최종 농도는 비슷하였다. 전극 간격이 좁을수록 전력 면에서 유리한 것으로 나타났다. 면적이 큰 전극이 초기 반응이 빠르고 나타났고 최종농도도 약간 낮은 것으로 나타났으나 차이는 크지 않았다. 면적이 좁은 경우 반응면적이 적지만 전류밀도가 높기 때문에 성능의 차이는 크지 않으나 면적이 적은 전극의 경우 요구 전력량이 높기 때문에 적절한 크기의 전극이 필요한 것으로 사료되었다.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.228.1-228
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.183.1-183
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• 2002

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.144-145
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• 1998