• Current Photovoltaic Research
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• v.11 no.3
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• pp.96-102
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• 2023

Sn-Pb narrow-bandgap perovskite solar cells, which is a light-harvesting layer thicker than 1.3 micrometers, is needed to enhance the low photocurrent. The fabrication of such a thick film through solution processing is a key challenge. Here, we studied and characterized the film by using a precursor solution of increased concentration, comparing it with the universally used 1-micrometer Sn-Pb perovskite film. The increase in molar concentration clearly induced thickness enhancement, but we observed that it also created numerous voids at the interface with bottom charge transporting layer. We hypothesized that these voids might hinder the increase in photocurrent associated with thickness enhancement. By introducing methylammonium chloride (MACl), we successfully fabricated Sn-Pb perovskite film with a thickness of 1.3 micrometer and no voids. Void-controlled Sn-Pb perovskite solar cells not only demonstrated superior short-circuit current density compared to those with voids but also operated smoothly under light exposure.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.90-95
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• 2019

Methylammonium lead bromide ($MAPbBr_3$) has attracted a lot of attention due to their excellent optoelectronic properties such as the compositional flexibility relevant to photoluminescence (PL) and UV-Vis absorbance spectrum, high diffusion length, and photoluminescence quantum yield (PLQY). Despite such advantages of organic-inorganic perovskite materials, more systematic study on manipulation of their optoelectronic properties in homo- or heterovalent metal ions doped halide perovskite nanocrystals is lacking. In this study, we systematically investigated the optical properties of colloidal $CH_3NH_3Pb_{1-x}Sn_xCl_{2x}Br_{3-2x}$ particles by addition of $SnCl_2$ into the typical methylammonium lead tribromide ($CH_3NH_3PbBr_3$) precursor solution. We found that only 1% addition of $SnCl_2$ shows a significant blue-shift from 540 nm to 420 nm in UV-Vis absorbance spectrum due to the strong quantum confinement effect. Furthermore, continuous blue-shift in photoluminescence spectra was observed as the amount of Cl increases. These experimental results provide new insights into the replacement of Pb within $MAPbBr_3$, required for the broadening of their application.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.260-267
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• 1998

A homogeneous and stoichimetric fine powder of the ferroelectric $Pb_[0.97}La_{0.02}(Zr_{0.64}Sn_{0.25}Ti_{0.11})O_3$ (PLZST) has been prepared by the hydroxide coprecipitation method. Studies on the crystallization behavior of precursor as a function of temperature by X-ray powder diffraction and transmission electron microscopy technique were consistent with the formation of the pyrochlore phase from amorphous, initially at low temperatures around 500~$550^{\circ}C$. Further heat treatment up to $750^{\circ}C$ resulted in development of the perovskite phase with no significant pyrochlore crystallite growth. At intermediate temperatures the precursor yields a fine mixture of pyrochlore and perovskite phases. When the pyrochlore phase was heat teated in air, slight weight increase was observed in the temperature range of 300~$700^{\circ}C$, which is thought to be caused from oxygen absorption. In argon atmosphere, weight increase was not observed. On the other hand, weight loss began to occur near $700^{\circ}C$, with giving off mostly CO2 gas. This implies that the pyrochlore phase seems to be crystallorgraphycally and thermodynamically metastable. An apparent activation energy of 53.9 ㎉/mol was estimated for the pyrochlore-perovskite phase transformation.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1027-1032
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• 2002

(Pb$\_$0.4/Ca$\_$0.6/)(Fe$\_$1/2/Nb$\_$1/2/)O$_3$ system was modified by 10 mol% Pb(Zn$\_$1/2/W$\_$1/2/)O$_3$ addition and their sinterability and microwave properties were investigated as a function of the amount of flux (0.975PbO-0.025SnO$_2$). With increasing flux content, single perovskite phase was maintained up to 3 wt% flux addition and further addition led to the presence of Pb-rich second phase which was confirmed by EDS analysis. The apparent densities of PCFN-PZW specimen increased and showed maximum values at 2.5 wt% flux addition for the Ts=1000$^{\circ}C$ and 2.0wt% flux addition for the Ts=1050$^{\circ}C$, respectively. The dielectric constant and Q$.$f values strongly depended on the variation of density and microstructure, where the optimum values of $\varepsilon$$\_$r/ = 91.95, Q$.$f = 5938GHz, TCF = +8.15ppm/$^{\circ}C$ were obtained for the 2.5wt% flux added PCFN-PZW specimen sintered at 1000$^{\circ}C$ for 4h.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.17-24
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• 2021

Perovskite solar cells (PSCs) can be fabricated through solution process economically with variable bandgap that is controlled by composition of precursor solution. Tandem cells in which PSCs combined with silicon solar cells have potential to reach high power conversion efficiency over 30%, however, lack of long-term stability of PSCs is an obstacle to commercialization. Degradation of PSCs is mainly attributed to the mass transport of halide and metal electrode materials. In order to ensure the long-term stability, the mass transport should be inhibited. In this study, we confirmed degradation behaviors due to the mass transport in PSCs and designed buffer layers with LiF and/or SnO₂ to improve the long-term stability by suppressing the mass transport. Under high-temperature storage test at 85℃, PSCs without the buffer layers were degraded by forming PbI₂, AgI, and the delta phase of the perovskite material, while PSCs with the buffer layers showed improved stability with keeping the original phase of the perovskite. When the LiF buffer and encapsulation were applied to PSCs, superior long-term stability on 85℃-85% RH dump heat test was achieved; efficiency drop was not observed after 200 h. It was also confirmed that 90.6% of the initial efficiency was maintained after 200 hours of maximum power tracking test under AM 1.5G-1SUN illumination. Here, we have demonstrated that the buffer layer is essential to achieve long-term stability of PSCs.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.334-341
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• 2019

Organometal halide perovskite materials have attracted much attention in the photovoltaic and light emitting devices due to the compositional flexibility with AMX₃ formula (A is an organic amine cation; M is a metal ion; X is a halogen atom). The addition of homovalent or heterovalent metal cations to the bulk organohalide perovskites has been performed to modify their energy band structure and the relevant optoelectronic properties by ligand-assisted ball milling. Here, we report CH₃NH₃Pb_1-xM_xBr₃ nanocrystals substituted by metallic cations (M is Sn²⁺, In³⁺, Bi³⁺; x = 0, 0.01, 0.02, 0.05, 0.1, 0.2). Photoluminescence and quantum yield was significantly reduced with increasing metallic cations content. These quenching effect could be resulted from the metal cations that behave as a non-radiative recombination center.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.242-247
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• 2000

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3(PNZST)$ thin films were deposited by RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3(LSCO)/Pt/Ti/SiO_2/Si$ substrate using a PNZST target with excess PbO of 10 mole%. The thin films deposited at substrate temperature of $500^{\circ}C$, and at RF power of 80W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at $650^{\circ}C$ for 10 seconds in air exhibited the good structures and electrical properties. The fabricated PNZST capacitor had a remanent polarization value of about $20\;{\mu}C/cm^2$ and coercive field of about 50 kV/cm. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.