• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.23-29
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• 2006

Ultrasonic soldering of Si-wafer to FR-4 PCB at ambient temperature was investigated. The UBM of Si-substrate was Cu/ Ni/ Al from top to bottom with thickness of $0.4{\mu}m,\;0.4{\mu}m$, and $0.3{\mu}m$ respectively. The pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom with thickness of $0.05{\mu}m,\;5{\mu}m$, and $18{\mu}m$ respectively. Sn-3.5wt%Ag foil rolled to $100{\mu}m$ was used for solder. The ultrasonic soldering time was varied from 0.5 s to 3.0 s and the ultrasonic power was 1,400 W. The experimental results show that a reliable bond by ultrasonic soldering at ambient temperature was obtained. The shear strength increased with soldering time up to a maximum of 65 N at 2.5 s. The strength decreased to 34 N at 3.0 s because cracks were generated along the intermetallic compound between Si-wafer and Sn-3.5wt%Ag solder. The Intermetallic compound produced by ultrasonic soldering between the Si-wafer and the solder was $(Cu,Ni)_{6}Sn_{5}$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.68-68
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• 2004

• Corrosion Science and Technology
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• v.6 no.2
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• pp.50-55
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• 2007

The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in $Na_{2}SO_{4}$. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% $Na_{2}SO_{4}$ solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed; only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders.

• Journal of Welding and Joining
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• v.30 no.6
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• pp.1-5
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• 2012

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.187-189
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• 2006

최근 유연솔더에서 무연솔더로 전환함에 따라서 PCB의 도금이 솔더접합부의 각도에 미치는 영향이 중요하게 되었다. 현재 PCB 도금은 Sn, Au, OSP 등으로 다양하게 진행되고 있다. 그러나 PCB 도금이 솔더접합부의 강도에 미치는 영향에 대한 연구는 아직 미비하다. 따라서 본 연구에서는 PCB 도금(Sn, Au, OSP)이 무연솔더(Sn-3.0Ag-0.5Cu) 접합부의 초기 전단강도에 미치는 영향과 열사이클시험 후 솔더접합부의 전단강도에 미치는 영향에 대해서 연구하였다.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.184-186
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• 2006

Sn-3Ag-0.5Cu is one of candidate as an alternative approach to conventional lead-tin solder. In order to evaluate that creep characteristic of QFP, we used Sn-3Ag-0.5Cu where the operating temperature is $100^{\circ}C$. The specimens were loaded to failure at average pull strength in the range of 20% to 25%, X-ray machine is used to eliminate effect of void. In this paper, relation of time-displacement and steady state creep rate was studied, and used to analyze the experimental result.

• Proceedings of the KWS Conference
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• 2001.10a
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• pp.159-161
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• 2001

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.59-64
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• 2013

In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.85-91
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• 2002

Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.136-138
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• 2006

Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. Ion migration phenomena has been observed in the field of exposing the specific environment and using for a long time. Also as the RoHS restriction was started in July 1st, 2006, Pb-free solder was utilized in electronics assemblies. In this case, it is very important to compatible between components and printed circuit board(PCB), thus surface treatment materials of PCB was changed to Sn, Sn-3.0Ag-0.5Cu, Cu. Therefore these new application become to need to reevaluate the sensitivity about electrochemical ion migration. This study was evaluated the occurrence time of electrochemical ion migration using by water drop test. We utilized PCB(printed circuit board) having a comb pattern as follows 0.1, 0.318, 0.5, 1.0 mm pattern distance. Sn-3.0Ag-0.5Cu and Sn-37Pb were electroplated on the comb pattern. 6.5V and 15.0V were applied in the comb pattern and then we measured the electrical short time causing by occurring the ion migration. In these results, we evaluate the sensitivity and derived the prediction models of ion migration occurrence time depending on the pattern materials, applied voltage and pattern spacing of PCB conductor.