• Journal of the Microelectronics and Packaging Society
• /
• 제15권4호
• /
• pp.51-57
• /
• 2008

In this paper, wetting and interfacial reaction properties for low Ag containing Sn-Ag-Cu Pb-free solder alloy, i.e., Sn-0.3Ag-0.7Cu were investigated and compared with those of Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu. Melting behavior and stress-strain curves of some Sn-xAg-xCu alloys were also measured using a differential scanning calorimeter(DSC) and a tensile test machine, respectively. In order to enhance insufficient wetting properties of Sn-0.3Ag-0.7Cu alloy, the improvement of wetting properties were analyzed by applying fluxes containing higher content of halide or indium adding of 0.2wt.% into the solder alloy. It was concluded that the small addition of indium is more effective for the improvement of wettability in low temperature range of $230{\sim}240^{\circ}C$ than applying flux containing higher content of halide.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.334-334
• /
• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제36권2호
• /
• pp.186-190
• /
• 2023

We studied the various characteristics of Sn-In (wt%) Pb-free solders for photovoltaic ribbon application. The solders near the eutectic composition of Sn₄₈In₅₂ (wt%) existed in InSn₄ and In₃Sn alloy phases, and in In crystal phase, but not in Sn crystal phase. In addition, the InSn₄ phase (γ-alloy) existed separately from the In₃Sn (β-alloy) and the In phase confirmed by an SEM-EDS-mapping. The melting temperature of the eutectic solder of Sn₄₈In₅₂ (wt%) was 119.2℃, and when the Sn content decreased in reference to the eutectic composition, it slightly increased to 121.4℃, but when the Sn content increased, it remained almost constant at 119.1℃. The peel strength of the ribbon plated with the Sn₄₂In₅₈ (wt%) solder was 38.7 N/mm², and it tended to increase when the Sn content increased. The peel strength of the eutectic Sn₄₈In₅₂ (wt%) solder was 53.6 N/mm², and that of the Sn₅₁In₄₉ (wt%) solder was 61.6 N/mm² that was the highest.

• Journal of the Microelectronics and Packaging Society
• /
• 제12권1호
• /
• pp.35-40
• /
• 2005

The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• 제24권7B호
• /
• pp.1322-1330
• /
• 1999

The major source of errors in high-speed networks such as Broadband ISDN(B-ISDN) is buffer overflow during congested conditions. These congestion errors are the dominant sources of errors in high-speed networks and result in cell losses. Conventional communication protocols use error detection and retransmission to deal with lost packets and transmission errors. As an alternative, we have presented a method to recover consecutive cell losses using forward error correction(FEC) in ATM(Asynchronous Transfer Mode) networks to reduce the problem. The method finds the lost cells by observing new cell sequence number($SN^{\ast}$). We have used the LI field together with SN and ST fields to consider the $SN^{\ast}$ which provides more correcting coverage than SN in ATM standards. The $SN^{\ast}$ based on the additive way such as the addition of LI capacity to original SN capacity is numbered a repeatedly 0-to-80 cycle. Another extension can be based on the multiplicative way such that LI capacity is multiplied by SN capacity. The multiplicative $SN^{\ast}$ is numbered in a repeatedly 0-to-1025 cycle.

• Korean Journal of Materials Research
• /
• 제34권3호
• /
• pp.170-174
• /
• 2024

In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni₃Sn₄ and Ag₃Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni₃Sn₄ and Ag₃Sn IMCs. After the wire bonding process, the interface is composed of Ni₃Sn₄, Ag₃Sn and (Ag,Cu)₃Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
• /
• pp.246-249
• /
• 2000

The effects of Zr on the mechanical workability and tensile strength of Cu-Ni-Mn-Sn-Al alloys have been investigated and the following results were obtained. The mechanical workability of Cu-Ni-Mn-Sn-Al alloys are increased with addition of Zr. And the surface cracks of specimen were not produced in Zr added Alloys. Especially in condition of hot-worked beyond the 90% working ratio, Zr contained specimen showed intra-granule crack propagation but Zr-free specimen showed inter-granule mode. The tensile strength have maximum value in 0.05% Zr contained alloy. The aging mechanism of Cu-Ni-Mn-Sn-Al alloys were varied by Zr addition.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.132.2-132.2
• /
• 2010

Mesoporous tinoxide ($SnO_2$) as anode materials for Li-ion battery were prepared by hydrothermal method and templating method using SBA-15 as template. And electrochemical properties of $SnO_2$ electrode were investigated with cyclic voltammogram (CV). The morphology and structures of $SnO_2$ were characterized by transmission electron microscopy (TEM) and X-ray diffractometer (XRD), respectively. The specific surface area was defined by $N_2$ adsorption with BET(Brunauer-Emmett-Teller) method. As a result, the surface area of mesoporous $SnO_2$ which was made from templating method is higher than the case of using hydrothermal method. In addition, in anodic performance, mesoporous $SnO_2$ which is prepared by templating method showed higher charge-discharge capasity compared to hydrothermal method and exhibited excellent stability over the entire cycle number. It was indicated that electrochemical performances of mesoporous $SnO_2$mainly affected to the structural features, such as specific surface area and porosity.

• Journal of Korea Foundry Society
• /
• 제37권1호
• /
• pp.14-20
• /
• 2017

The microstructure, electrical conductivity and hardness variation of an AZ91-5wt%Sn Mg alloy sample during a solid-solution and aging heat treatment were instigated by optical microscopy, scanning electron microscopy, X-ray diffraction and by Rockwell hardness techniques in this study. The XRD result shows that the main phases in the as-casted alloy are ${\alpha}$-Mg, $Mg_{17}Al_{12}$ and $Mg_2Sn$. From the SEM images of the AZ91-5wt%Sn Mg alloy after the solution treatment, the $Mg_{17}Al_{12}$ phases in the alloy were found to have dissolved into the matrix with an increase in the holding time during the solution treatment, but $Mg_2Sn$ phases were clearly observable. The highest peak hardness of the AZ91-5wt%Sn Mg alloy is 82HRE at an aging temperature of $200^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제25권4호
• /
• pp.304-308
• /
• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.