• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.4
• /
• pp.294-299
• /
• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• Transactions of Materials Processing
• /
• v.30 no.1
• /
• pp.22-26
• /
• 2021

The present study demonstrated the effects of processing variable and alloying elements on the processing window of austempered cast iron, one of the heat-treatable cast irons, in order to elucidate the relation between heat treatment and microstructure in terms of time and temperature. Such microstructure is strongly affected by austenitizing conditions and alloying elements. The size of processing window tends to increase initially with increasing austenitizing temperature from 1123 to 1173 K, followed by a decline in the reverse direction between 1173 and 1223 K. Thus, the optimized processing window with large frame was found at an austenitizing temperature of 1173 K. To determine the effect of Sn addition, the processing window in the sample was created by the addition of 0.08 wt.% Sn, which appeared larger than that without Sn and with 0.06 wt.% Sn.

• Journal of the Korean Chemical Society
• /
• v.24 no.3
• /
• pp.183-192
• /
• 1980

Oxidation reactions of carbon monoxide on $SnO_2$, Sb-doped $SnO_2$, and Pt catalyst were studied. The oxidation reaction was found to be first order with respect to both CO and O$_2$ on $SnO_2$ and Sb-doped $SnO_2$ catalysts, and to be of half order on Pt catalyst. A small addition of Sb to $SnO_2$ (depant composition: 0.05∼0.1 mol %) increased the rate of oxidation. On the contrary, a large addition decreased the rate. From the rate expression of oxidation on Pt catalyst, the inhibition effect of carbon monoxide on the rate of oxidation was deduced. The experimentally obtained activatio energies were 5.7 kcal for the Sb doped $SnO_2$ catalyst (dopant composion: 0.05 mole%), and 6.4 kcal for the Pt catalyst. A possible reaction mechanism was proposed from the experimentally obtained kinetic data.

• Journal of the Korean Chemical Society
• /
• v.38 no.3
• /
• pp.241-245
• /
• 1994

The oxidative addition reaction has been employed to synthesize heteropolynuclear compounds containing Si-M bonding interaction between the silicon atom of silatrane, pentacoordinate silicon derivative with transannular Si-N dative bond, and the main group element. The reaction of $SnBr_2 with 1-bromosilatrane(1a) in acetonitrile gives the mixture of yellow(2a) and white(2b) solids which were isolated and charaterized by ^1H-NMR, ^{29}Si-NMR, ^{119}Sn-NMR and Mass spectroscopy. The yellow compound was characterized as 1-tribromotinsilatrane which had Si-Sn bonding interaction. The reaction of SnBr2 with 1-bromo-3,7,10-trimethylsilatrane(1b) in methanol gives the Sn(Ⅳ) complex, N[CH_2CH(CH_3)O]_3SiSnBr_3(CH_3OH)_2(3),$ which was characterized by various means.

• Proceedings of the KIEE Conference
• /
• 1993.11a
• /
• pp.181-184
• /
• 1993

Microwave characteristics of the system (Zr, Sn)$TiO_4$, ceramics within composition range X between 0.2 and 0.35 were investigated at 8GHz. For the improvement properties of (Zr, Sn)$TiO_4$, system, $Ta_2O_5$ and $WO_3$ addition in the range of 0.5 to 2.0wt% were investigated.

• Journal of Korea Foundry Society
• /
• v.34 no.6
• /
• pp.187-193
• /
• 2014

In the present work, the effect of adding Ce on the corrosion behavior of Mg-4Al-2Sn-1Ca alloy was investigated. The studied alloys were fabricated by gravity casting method and a potentiodynamic polarization, A.C. impedance and hydrogen evolution tests were carried out in a 3.5% NaCl solution with pH 7.2 at room temperature to measure the corrosion properties of Mg-4Al-2Sn-1Ca-xCe alloys. The microstructure of the Mg-4Al-2Sn-1Ca alloy was composed of ${\alpha}$-Mg, Mg17Al12, Mg2Sn and CaMgSn phase. Also, a $Al_{11}Ce_3$ phase was newly formed by the addition of Ce. With an increase of the Ce contents, the microstructure became refined and the corrosion resistance improved.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.2
• /
• pp.13-19
• /
• 2000

Shear strengths of BGA solder joints on Cu pads were studied for Cu-containing Sn (0, 1.5, and 2.5 wt.% Cu) and Sn-40Pb (0 and 0.5wt.% Cu) solders, with emphasis on the roles of the Cu-Sn intermetallic layer thickness and the roughness of the interface between the intermetalic layer and solder. The shear strength test was performed for as-soldered solder joints with various soldering reaction times up to 4 min. The addition of Cu to the pure Sn solder results in an enhanced growth of the intermetallic layer whereas the effect of Cu addition to the Sn-40Pb solder is primarily on the reduction of the roughness of the intermetallic/solder interface. The critical thickness of the intermetallic layer for a maximum shear strength depends on the solder materials, which was measured to be ~ 2.3 $\mu\textrm{m}$ for Sn-Cu solders and ~ 1.2 $\mu\textrm{m}$ for Sn-Pb-Cu solders. The shear strength at the critical intermetallic layer thickness seems to increase as the intermetallic/solder interface becomes rougher. This is in accordance with the observation that the sheared fracture occurred initially within the solder tends to shift towards the intermetallic/solder interface as the intermetallic layer grows above the critical thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.1
• /
• pp.74-78
• /
• 2024

We have studied the effects of Ag on the characteristics of Sn₄₈In₅₂Ag_x (wt%) low-melting solders for photovoltaic ribbons. The Sn₄₈In₅₂ (wt%) solder coexisted in the InSn₄ and In₃Sn alloys. Ag atoms added in the solder formed an AgIn₂ alloy by reacting with some part of In atoms, while they did not react with Sn atoms. The addition of Ag atoms in the Sn₄₈In₅₂Ag_x (wt%) solders showed useful results; an increase in peel strength and a decrease in melting temperature. The peel strength of the ribbon plated with the Sn₄₈In₅₂ (wt%) solder was 53.6 N/mm², and that of the Sn₄₈In₅₂Ag₁ (wt%) solder largely increased to 125.1 N/mm². In the meanwhile, the melting temperature of the Sn₄₈In₅₂ (wt%) solder was 119.2℃, and that of the Sn₄₈In₅₂Ag₁ (wt%) solder decreased to 114.0℃.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.04a
• /
• pp.73-73
• /
• 2000

Shear strength of BGA solder joints on Cu pad was studied for Cu-contained Sn n.5 a and 2.5wt.% Cu) and Sn-Pb (o.5wt.% Cu) solders, with emphasis on the roles of the C Cu-Sn intermetallic layer thickness and the roughness of the interface between the i intermetallic layer and solder. The shear strength test was performed both for a as-soldered s이der joints with soldering reaction times of 1, 2, 4 min and for aged s이der j joints at 170 C up to 16 days. The Cu addition to both pure Sn and eutectic Sn-Pb s solders increased the intermetallic layer thickness at both soldering and aging t temperatures. The Cu addition also resulted in changes in the roughness of the interface b between the intermetallic layer and solder at as-soldered states. With increasing Cu c content. the interface roughened for Sn-Cu solders whereas it flattened for Sn-Pb-Cu s solders. The shear fractures in all solder joints investigated were confined in the bulk s solder rather than through the intermetallic layer. Therefore, the effect of Cu content in s solders on the shear strength of the solder joints was primarily attributed to its i influence on the micros$\sigma$ucture of bulk solder, such as the size and spatial distributions of CU6Sn5 precipitates. In addition, the critical intermetallic layer thickness for a m maximum shear strength seemed to depend on the Cu content in bulk solder.older.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.1
• /
• pp.57-61
• /
• 2005

The microwave dielectric properties of 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics with H$_3$BO$_3$-SnO were investigated to improve the sintering condition for the LTCC. According to the X-ray diffraction patterns, 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics with H$_3$BO$_3$-SnO had the columbite structure of TiTe$_3$O$_{8}$ phase and the ilmenite structure of MgTiO$_3$ phase and there were no second phase. Increasing the addition of H$_3$BO$_3$-SnO, the density and dielectric constant of the 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics were increased but the quality factor was decreased. The temperature coefficient of resonant frequency was shifted to the negative(-) direction with addition of H$_3$BO$_3$-SnO.EX>-SnO.