• Korean Journal of Materials Research
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• v.4 no.7
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• pp.759-766
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• 1994

Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.312-316
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• 1998

ZnO- TiO$_2$, and Sn0$_2$ - Ti0$_2$ ceramic composites doped with TiO$_2$ were prepared and their electrical and 1000ppm CO gas sensing properties were investigated. The phases of samples were analyzed by XRD, and the microsturctures of the fractured surface of samples were observed by SEM. A carbon monoxide gas sensitivity was de¬fined as the ratio of the resistance in dry air atmosphere(R$drt air$) to the resistance in 1000ppm CO gas atmosphere(R$_co$) The CO gas sensitivity of Smol% Ti0$_2$-added ZnO decreased about 1.7 times compared to that of pure ZnO. On the other hand, the maximum CO gas sensitivity of Ti0$_2$-added SnO$_2$ increased about 2.5 times compared to that of pure SnO$_2$. Therefore, the CO gas sensitivies of SnO$_2$-TiO$_2$ composite were better than those of ZnO- Ti0$_2$ and the temper¬ature range showing the maximum sensitivity for Sn0$_2$-TiO$_2$ composite was lower than that for ZnO- Ti0$_2$.

• Journal of the Korean institute of surface engineering
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• v.34 no.6
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• pp.537-544
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• 2001

In the present study, tin-zinc alloys were coated on a cold-rolled steel sheet with variations of electrolyte concentration, additives quantity and current density employing the Hull cell and circulation cell simulator. With an addition of additives of 2m1/L, tin-zinc deposits containing 10 to 40 percent Zn revealed a good surface appearance with weak acidic electrolytes. The organic additives suppressed the Sn deposition rate and thus increased the zinc contents in tin-zinc coating layers. The zinc contents in the tin-zinc coating layers depended almost linearly on the concentrations of metal ions of tin and zinc. Temperature of the electrolyte affected the composition tin-zinc coating layer. However, the concentration of complexants revealed little effectiveness. The surface morphology of tin-zinc coating showed dense tin and zinc phases with fine equiaxed grains with the high current density.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.191-194
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• 2009

PtRu based and PtSn based ternary catalysts were prepared by a conventional impregnation method using NaBH4 as reducing agent. The alloy formation, crystalline size and chemical composition of the in-house catalysts were determined by XRD, TEM and EDX, respectively. The chemical compositions of in-house catalysts were quite similar to the nominal value and good alloy formations were also observed. Further, crystalline sizes of ternary catalysts were comparatively smaller than binary catalysts and were approximately 3.5 ~ 5.5 nm. The electrochemical measurements were carried out in the solution 1 M $H_2SO_4$ with 1 M $C_2H_5OH$ at room temperature. LSV results obtained that ternary catalysts were higher current densities and specific activities. Especially, in case of tungsten addition system, Pt5Sn4W/C have the highest specific activities values and was approximately 21.2 and 3.1 times higher than that of PtRu/C and PtSn/C electrocatalyst.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1057-1058
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• 2006

The preparation of $Ti_{50}Cu_{28}Ni_{15}Sn_7$ metallic glass composite powders was accomplished by the mechanical alloying of a pure Ti, Cu, Ni, Sn and carbon nanotube (CNT) powder mixture after 8 h milling. In the ball-milled composites, the initial CNT particles were dissolved in the Ti-based alloy glassy matrix. The bulk metallic glass composite was successfully prepared by vacuum hot pressing the as-milled CNT/$Ti_{50}Cu_{28}Ni_{15}Sn_7$ metallic glass composite powders. A significant hardness increase with the CNT additions was observed for the consolidated composite compacts.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.722-723
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• 2006

A new method has been developed to fabricate microcomponents by a combination of photolithography and sintering of metallic powder mixtures, without the need for compression and the addition of Mg. This involves (1) the fabrication of a micromould, (2) mould filling of the powder/binder mixture, (3) debinding and (3) sintering. The starting powdered materials consisted of a mixture of aluminium powder(average size of 2.5 um) and alloying elemental powder of Cu and Sn(less than 70nm), at appropriate proportions to achieve nominal compositions of Al-6wt%Cu, Al-6wt%Cu-3wt%Sn. This paper presents detailed investigation of debinding behaviour and microstructural development.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.839-844
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• 2011

We examined the effects of alloying elements such as Fe, Ga, In, Sn, Mg, and Mn on the electrochemical characteristics of Al-based alloys for Al-air batteries by potentiodynamic polarization tests and electrochemical impedance spectroscopy. The corrosion potential of an Al anode was lowered by the addition of Ga and Sn, resulting in an increase in the cell voltage compared with a pure Al electrode. Fe was not beneficial to improve the electrochemical properties of the Al anode in that it caused a decrease in the cell voltage and reduced corrosion rate slightly. In, Mn, Sn, and Mg decreased the corrosion rate of the Al alloys, while Ga enhanced corrosion significantly and accelerated consumption of the anode.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.879-888
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• 2001

The effects of final annealing temperature on the microstructure and creep characteristics were investigated for the Zr-lNb-0.2X (X=0, Mo, Cu) and Zr-lNb- 1Sn-0.3Fe-0.1X (X=0, Mo, Cu) alloys. The microstructures were observed by using TEM/EDS, and grain size and distributions of precipitates were analyzed using a image analyzer. The creep test was performed at $400^{\circ}C$ under applied stress of 150 MPa for 10 days. The $\beta$-Zr was observed at annealing temperature above $600^{\circ}C$. In the temperature above$ 600^{\circ}C$, the grain sizes of both alloy systems appeared to be increased with increasing the final annealing temperature. The creep strengths of Zr-1Nb-1Sn-0.3Fe-0.1X alloys were higher than those of Zr-1Nb-0.2X ones due to the effect of solid solution hardening by Sn in Zr-lNb-lSn-0.3Fe-0.1X alloy system. Also, Mo addition showed the strong effect of precipitate hardening in both alloy systems. The creep strength rapidly decreased with increasing the annealing temperature up to $600^{\circ}C$. However, a superior creep resistance was obtained in the sample that annealed to have a second phase of $\beta$-Zr. It was considered that the appearance of $\beta$-Zr would play an important role in the strengthening mechanism of creep deformation.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.114-115
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• 2007

In this study, low temperature sintering property of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with sintering adds were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_3O_8$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_3O_3$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. In the case of $H_3BO_3$ addition, the bulk density and dielectric constant were decreased but quality factor was increased with amount of $H_3BO_3$ additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3+xwt%H_3BO_3$ ceramics were moved to positive direction. In another case, SnO addition, the bulk density and dielectric constant were increased but Quality factor was decreased with amount of SnO additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$+ywt%SnO ceramics were shifted to negative direction. The dielectric constant, quality factor and TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with $2wt%H_3BO_3$ and 2.5wt%SnO sintered at $830^{\circ}C$ for 1h, were 28.5, 39,570GHz, $+9.34ppm/^{\circ}C$ and 29.86, 35,80000z, $-0.58ppm/^{\circ}C$, respectively.