• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.185-188
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• 2006

본 논문에서는 Moment 법을 이용한 안테나 해석 프로그램에 대해 다룬다. Delaunay 삼각화 알고리즘에 근거하여 pre-processor를 구현한다. Moment법을 이용하여 main-processor를 구현한다. S-parameter를 주파수 영역과 Smith Chart에 표시하고, 방사패턴을 다양한 각도에서 확인 할 수 있도록 post-processor를 구현한다. 해석 결과의 신뢰성을 위해 20GHz 에서 동작하는 고 이득 및 고지향성을 갖는 마이크로스트립 패치 안테나 어레이를 설계하고 이를 제작 및 측정한다. 측정결과와 상용 툴의 결과와 구현한 프로그램의 결과를 비교 및 분석한다.

• Journal of Advanced Navigation Technology
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• v.6 no.4
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• pp.312-317
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• 2002

This paper presents a graphical design method for a low noise amplifier using the match circles plotted in the ${\Gamma}_{IN}$ plane on the smith chart. Each circle would be useful for reducing some trial and error efforts resulting from making a trade-off for an optimized performance of a single stage amplifier. A design example is presented to illustrate the design procedure.

• Journal of information and communication convergence engineering
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• v.16 no.4
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• pp.203-212
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• 2018

In this article, a novel design of patch antenna with wide band characteristics is presented. The proposed antenna is having electrical dimensions of $0.14{\lambda}{\times}0.11{\lambda}$ (at lower initial frequency) and footprints of $150mm^2$. Structural parameters optimization shows 3.1-23.5 GHz frequency range for a (reflection coefficient) $S_{11}{\leq}-10dB$ and simulated gain 6.8 dB is obtained. An equivalent circuit model is proposed to get an insight view of antenna. Advanced Systems Design (ADS) simulation results are obtain which confirm the validity of proposed model. Degenerated foster canonical form has been used to explain the reactance and capacitive behavior idea of simulated proposed antenna's input impedance later on an equivalent circuit model and smith chart is also suggested. HFSS and CST have been used to analyze antenna behavior. The proposed antenna can be further used for microwave image detection applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.698-703
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• 2007

In this paper, a novel impedance tuner using a directional coupler is proposed. The design topology is analyzed by signal flow graph(SFG) and shows advantages compared with conventional single and double stub methods from the view points of easy implementation and wide tuning range, respectively. This impedance tuner consists of ten switches and its $2^{10}$ tuning points are distributed uniformly on the whole Smith chart. The measured maximum magnitude of the reflection coefficient is 0.9. And the fabricated impedance tuner has a wide bandwidth from 1.8 to 2.2 GHz. Using this impedance tuner, we did a load-pull measurement of a power transistor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.6 s.109
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• pp.511-518
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• 2006

In this paper, a small RFID tag antenna in UHF band which has bandwidth-enhanced characteristic is proposed. The shape of the proposed antenna is a meander antenna to have size-reduced characteristic, and it consists of two radiators which make dual resonance in adjacent frequency to enhance bandwidth. By adjusting length and location of each radiator, the proposed antenna can make dual resonance at arbitrary location on the Smith chart, which is able to make impedance matching with RFID tag chip in wide frequency range. And it is apparent that the proposed antenna can have bandwidth-enhanced characteristic according to the simulated and measured results.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.724-726
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• 1992

In this paper, the permeability ($\mu_{\tau}'$, $\mu_{\tau}''$), dielectric constants($\varepsilon_{\tau}'$, $\varepsilon_{\tau}''$) and absorbption characteristics of Ferrite/Rubber 0-3 composites were investigated. The composite specimens were prepared by molding and curing the mixtures of matrix rubber and Ni-Zn ferrite powders which were synthesized by wet-direct method. The permeability ($u_{\tau}'$) of specimen was decreased from 2.58 to 0.7 in the range of 1$\sim$7(GHz) and kept constant 0.7$\sim$0.8 at higher than 7(GHz), the higher the frequency was, the less the valves of $u_{\tau}"$ was from 1.57 to 0.03. The optimum thickness of microwave absorber, utilizing the Smith chart, was 5(mm). The reflection loss shows over than 20(dB) from 5.5(GHz) to 7.5(GHz) at 5(mm) thickness and relative band width(B/fm) was about 30%.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.124-128
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• 1999

We report microwave properties of high-T$_c$ superconducting (HTS) microstrip antennas without impedance matching circuits, where the impedance mismatching is obvious under the critical temperature (T$_c$). The superconducting thin films used in this report were YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on MgO substrates produced by pulse laser deposition (PLD) technique. At around T$_c$, 86 K the reflection coefficient rapidly drops, and the standing wave ratio (SWR) becomes almost unity, and the characteristic impedance based on the Smith chart is nearly 50 ${\Omega}$. The reflection coefficient and the SWR of the HTS microstrip antenna were - 62.52 dB and 1.0015, respectively, at the resonant frequency of 11.812 CHz at 86 K.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Journal of information and communication convergence engineering
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• v.11 no.1
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• pp.56-61
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• 2013

Modern integrated circuits (ICs) are becoming an integrated parts of analog, digital, and radio frequency (RF) circuits. Testing these RF circuits on a chip is an important task, not only for fabrication quality control but also for tuning RF circuit elements to fit multi-standard wireless systems. In this paper, RF test circuits suitable for embedded testing are introduced: RF power detectors, power control circuits, directional couplers, and six-port reflectometers. Various types of embedded RF power detectors are reviewed. The conventional approach and our approach for the RF power control circuits are compared. Also, embedded tunable active directional couplers are presented. Then, six-port reflectometers for embedded RF testing are introduced including a 77-GHz six-port reflectometer circuit in a 130 nm process. This circuit demonstrates successful calibrated reflection coefficient simulation results for 37 well distributed samples in a Smith chart. The details including the theory, calibration, circuit design techniques, and simulations of the 77-GHz six-port reflectometer are presented in this paper.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.15-19
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• 2016

The gate bias dependence of kink phenomenon with a large deviation from the resistance circle in Smith chart is observed in the frequency response of $S_{11}$-parameter for large multi-finger RF MOSFETs. For the first time, this bias dependence is analyzed by measuring magnitude and phase of $S_{11}$-parameter, input resistance and input capacitance. As a result, $V_{gs}$ dependent $S_{11}$-parameter is largely changed by the magnitude of input capacitance as well as dominant pole and zero frequencies of input resistance. At $V_{gs}=0V$, the kink phenomenon occurs in the high frequency region because of very small phase difference of $S_{11}$-parameter and high pole frequency of input resistance. However, the kink phenomenon at higher $V_{gs}$ is generated in the low frequency region owing to large phase difference and low pole frequency.