• 한국정밀공학회지
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• 제25권1호
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• pp.122-129
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• 2008

Two-photon stereolithography is recognized as a promising process for the fabrication of three-dimensional (3D) microstructures with 100 nm resolution. Generally, beam-scanning system has been used in the conventional process of two-photon stereolithography, which is limited to the fabrication of micro-prototypes in small area of several tens micrometers. For the applications to 3D high-functional micro-devices, the fabrication area of the process is required to be enlarged. In this paper, large-area two-photon stereolithography (L-TPS) employing stage scanning system has been developed. Continuous scanning method is suggested to improve the fabrication speed and parameter study is conducted. An objective lens of high numerical aperture (N.A.) and high strength material were employed in this system. Through this work, 3D microstructures of $600*600*100\;{\mu}m$ were fabricated.

• 천문학회지
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• 제52권6호
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• pp.227-233
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• 2019

We report the performance of the 13.7-meter Taeduk Radio Astronomy Observatory (TRAO) radio telescope. The telescope has been equipped with a new receiver, SEQUOIA-TRAO, a new backend system, FFT2G, and a new VxWorks operating system. The receiver system features a 16-pixel focal plane array using high-performance MMIC preamplifiers; it shows very low system noise levels, with system noise temperatures from 150 K to 450 K at frequencies from 86 to 115 GHz. With the new backend system, we can simultaneously obtain 32 spectra, each with a velocity coverage of 163 km s^-1 and a resolution of 0.04 km s^-1 at 115 GHz. The new operating system, VxWorks, has successfully handled the LMTMC-TRAO observing software. The main observing method is the on-the-fly (OTF) mapping mode; a position-switching mode is available for small-area observations. Remote observing is provided. The antenna surface has been newly adjusted using digital photogrammetry, achieving a rms surface accuracy better than 130 ㎛. The pointing uncertainty is found to be less than 5" over the entire sky. We tested the new receiver system with multi-frequency observations in OTF mode. The aperture efficiencies are 43±1%, 42±1%, 37±1%, and 33±1%, the beam efficiencies are 45±2%, 48±2%, 46±2%, and 41±2% at 86, 98, 110, and 115 GHz, respectively.

• Journal of the Optical Society of Korea
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• 제9권1호
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• pp.16-21
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• 2005

Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.