• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2002.10b
• /
• pp.443-444
• /
• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.3
• /
• pp.203-207
• /
• 2008

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials. There are many elements such as slurry, polishing pad, process parameters and conditioning in CMP process. Especially, polishing pad is considered as one of the most important consumables because this affects its performances such as WIWNU(within wafer non-uniformity) and MRR(material removal rate). In polishing pad, grooves and pores on its surface affect distribution of slurry, flow and profile of MRR on wafer. A subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure(MS) pad. MS pad is designed to have uniform structure on its surface and manufactured by micro-molding technology. And then STI CMP performances such as pattern selectivity, erosion and comer rounding are evaluated.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2002.10b
• /
• pp.435-437
• /
• 2002

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

• Journal of the Korean Society for Precision Engineering
• /
• v.32 no.7
• /
• pp.627-631
• /
• 2015

Conventional etching technology is in the face of problems such as dishing, erosion resulting from non-uniform removal of film. Advanced printed circuit board (PCB) requires accurate wire formation with the aid of planarization by chemical mechanical polishing (CMP). Linear roll CMP is a line contact continuous process which removes the film by pressurization and rotation while slurry is supplied to polishing pad attached to the roll. This paper focuses on the design of floating nozzle on the linear roll CMP equipment which makes the slurry supply uniformly on the roll pad. Experimental results show that removal rate using the floating nozzle increases 3 times higher than that without it and non-uniformity is less than 15%.

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.7
• /
• pp.22-29
• /
• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.370-373
• /
• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.2 no.4
• /
• pp.17-24
• /
• 2003

Chemical mechanical polishing(CMP) has been applied for planarization of topography after patterning process in semiconductor fabrication process. Tungsten CMP is necessary to build up interconnects of semiconductor device. But the tungsten dishing and the oxide erosion defects appear at end-point during tungsten CMP. It has been known that the generation of dishing and erosion is based on the over-polishing time, which is determined by pattern selectivity. Fixed abrasive pad takes advantage of decreasing the defects resulting flam reducing pattern selectivity because of the lower abrasive concentration. The manufacturing technique of fixed abrasive pad using hydrophilic polymers is introduced in this paper. For application to tungsten CMP, chemicals composed of oxidizer, catalyst, and acid were developed. In comparison of the general pad and slurry for tungsten CMP, the fixed abrasive pad and the chemicals resulted in appropriate performance in point of removal rate, uniformity, material selectivity and roughness.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 1996.05a
• /
• pp.47-52
• /
• 1996

본 연구에서는 각종 강구조물의 도장전 샌드블리스트 작업에 다른 공해를 방지하기 위해, 모래-물의 2상류를 분사할 수 있는 샌드블라스트 장치를 제작하여, 2상류 분사에 따른 마멸-부식(wear-corrosion)특성과 slurry erosion에 의한 anchor pattern 및 침식-마멸거동을 고찰하고, 물에 의한 강구조물의 부식방지를 위한 부식억제제가 강구조물의 도막에 미치는 방식특성을 구명함으로써 공해방지, 부식손상 및 산업의 국제경쟁력 향상에 기여하고자 한다.

• Korean Journal of Materials Research
• /
• v.22 no.11
• /
• pp.587-590
• /
• 2012

Recently, the demand for the miniaturization of package substrates has been increasing. Technical innovation has occurred to move package substrate manufacturing steps into CMP applications. Electroplated copper filled trenches on the substrate need to be planarized for multi-level wires of less than $10{\mu}m$. This paper introduces a chemical mechanical planarization (CMP) process as a new package substrate manufacturing step. The purpose of this study is to investigate the effect of surfactant on the dishing and erosion of Cu patterns with the lines and spaces of around $10/10{\mu}m$ used for advanced package substrates. The use of a conventional Cu slurry without surfactant led to problems, including severe erosion of $0.58{\mu}m$ in Cu patterns smaller than $4/6{\mu}m$ and deep dishing of $4.2{\mu}m$ in Cu patterns larger than $14/16{\mu}m$. However, experimental results showed that the friction force during Cu CMP changed to lower value, and that dishing and erosion became smaller simultaneously as the surfactant concentration became higher. Finally, it was possible to realize more globally planarized Cu patterns with erosion ranges of $0.22{\mu}m$ to $0.35{\mu}m$ and dishing ranges of $0.37{\mu}m$ to $0.69{\mu}m$ by using 3 wt% concentration of surfactant.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.3
• /
• pp.37-41
• /
• 2012

The wafer level stacking with Cu-to-Cu bonding becomes an important technology for high density DRAM stacking, high performance logic stacking, or heterogeneous chip stacking. Cu CMP becomes one of key processes to be developed for optimized Cu bonding process. For the ultra low-k dielectrics used in the advanced logic applications, Ti barrier has been preferred due to its good compatibility with porous ultra low-K dielectrics. But since Ti is electrochemically reactive to Cu CMP slurries, it leads to a new challenge to Cu CMP. In this study Ti barrier/Cu interconnection structure has been investigated for the wafer level 3D integration. Cu CMP wafers have been fabricated by a damascene process and two types of slurry were compared. The slurry selectivity to $SiO_2$ and Ti and removal rate were measured. The effect of metal line width and metal density were evaluated.