• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.385-389
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• 2003

There are four main components of the CMP process: polishing pad, slurry, elastic supporter, and pad conditioner. The polishing pad is an essential component to the reproducibility of polishing uniformity in CMP process. However, the polishing pad in recently using metal CMP raised the several points of high cost caused by the increase of cycle time and the many usage of slurry. It is necessary to develop the novel polishing pad which would lead the cost reduction by the higher pad life-cycle, minimized cycle time and lower slurry usage. The characteristics of polishing pad were studied on the effects of different sets of the Polishing pad, which can be applied to metal chemical mechanical polishing process for global planarization of multilevel interconnection structure. The main purpose of this experiment is cost reduction by the increase of pad life-time, the decrease of cycle time and the lower usage of slurry through the specific hard porous structured pad design. It is confirmed that the novel polishing pad made the slurry usage decrease to 60% as well as the pad life-time increase twice with the 25% improvement of removal rate. The polishing time could be decreased and it also helped the cycle time to diminish. It can be expected that this results will help both the process throughput and the device yield to be improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.34-37
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• 한국정밀공학회지
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• 제21권11호
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• pp.46-52
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• 2004

CMP (Chemical-Mechanical Polishing) is a process in which both chemical and mechanical mechanisms act simultaneously to produce the planarized wafer. CMP process is an extensive usage and continuing high growth rates in the semiconductor industry. The understanding of the process, however, is much slower. The nature of material removal from the wafer is still undefined and ambiguous. Material removal rate according to the slurry flow rate is also undefined and ambiguous. Thus, in this study, the basic mechanism of material removal rate as slurry flow rate is defined in terms of energy supply and energy loss.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.415-420
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• 2001

Water usage in the semiconductor industries is dramatically increased by not only using bigger wafer from 8 inches to 12 inches but also by adapting new process such as Chemical Mechanical Planarization (CMP) process invented by IBM in late '80. However, The document published by International Semiconductor Association suggests the decreasing ultra pure water (UPW) use from 22 gallon/in$^2$in 1997 to 5 gallon/in$^2$ in 2012. The criteria will possibly used as exporting obstacle in the future. Generally, Solid content of CMP slurry is about 15wt%. The slurry is diluted with UPW before fed to a CMP process. When the slurry is discharged from the process as waste, it contains 0.1~0.6wt% of solid content and 9~10 at pH. The CMP waste slurry is discharged to stream with minimum treatment. In this study, to find optimum condition of coagulation for water recovery from the waste CMP slurry various condition of coagulation were examined. After coagulation far 0.1 wt% solid content of waste CMP slurry, the sludge volume was 10~15% after 30 min of sedimentation time. For the 0.5 wt%, sludge volume was 50~55% after one hour of sedimentation time. For more than 80% of water recycling, the solid content should be in the range of 0.1 to 0.2wr%. Based on the result of the turbidity removal, the Zeta Potential and the analysis of heavy metals, the optimum condition for 0.1 wr% of waste CMP slurry was with 20 mg/L of PACI at 4 to 5 of pH. The result showed that the optimum conditions fer the 0.1 wt% waste CMP slurry were 100mg/L of Alum at 4~5 of pH, 100 mg/L of MgCI$_2$at pH 10 to 11 and 100 mg/L of Ca(OH)$_2$at pH 9 to 11, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.178-181
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• 2002

We studied the characteristics of polishing pad, which can apply W CMP process for global planarization of multilevel interconnection structure. Also we investigated the effects of different sets of polishing pad. The purpose of this experiment is the cost reduction by the increase of pad life time and decrease of cycle time and slurry usage with new pad. Especially we studied the effect of polishing pad for CMP process by this experiment of polishing pad that is consumables material during CMP process. We expecting the increase of process throughput and improvement of device manufacturing yield because we can choose optimum polishing pad through this result.

• 한국초지조사료학회지
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• 제27권3호
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• pp.189-196
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• 2007

제주지역에서 사료작물 작부체계에 있어 여름철에 주로 재배되고 있는 수수$\times$수수 교잡종을 공시하여 lysimeter에 돈분액비 시용수준이 유거수의 특성에 미치는 영향을 구명하기 위하여 무비구, 화학비료구(200kg N/ha), 돈분액비 시용구(200, 400, 600kg N/ha) 등 5처리를 두어 난괴법 3반복으로 수행하였다. 돈분액비의 시용 초기에 유거수내 BOD 및 COD는 돈분액비 600kg N/ha 시용구가 다른 처리구에 비해 유의적으로 높았다(p<0.05). 또한 돈분액비 시용량이 증가할수록 유거수의 T-N는 증가하였다. 그러나 유거수 중의 T-P 농도는 돈분액비 시용수준에 대한 영향은 크게 나타나지 않았다. 유거수 중의 $NO_3-N$ 및 $NH_4-N$ 농도는 돈분액비 시용수준이 증가할 수록 높았다(p<0.05). 결론적으로 제주 화산회토양에서는 돈분액비 시용량이 증가할 수록 수수$\times$수수 교잡종의 건물수량은 높일 수 있으나 유거수에 의한 환경오염이 우려된다. 따라서 제주 화산회토양에서 화학비료를 대체하기 위한 돈분액비 이용은 200kg N/ha 시용하는 것이 환경 오염방지 측면에서 안전할 것으로 판단된다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1995년도 추계학술대회 논문집
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• pp.43-47
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• 1995

The ball screw is one of the important mechanical parts for the linear motion feeding systems. The usage of the ball screw has been growing in various industrial fields such as CNC machine tool, industrial robot and automated systems. Because of ever increasing demand for ball screws, increased accuracy and quality of the ball screw is needed,especially the surface roughness of the ball contact area in order to diminish noise and vibration. Therefore to improve the surface roughness of the area,we introduced magnetic assisted polishing which is one of the new potential polishing methods. In this study, diamond slurry and iron powder was used for magnetic assisted polishing of the ball bearing surface. This polishing process was experimentally confirmed to improve the surface roughness of the ball bearing.

• 한국환경과학회지
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• 제15권7호
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• pp.677-688
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• 2006

Currently, the application of $TiO_2$ photocatalyst has been focused on purification and treatment of wastewater. However, the use of conventional $TiO_2$ slurry photocatalyst results in disadvantage of stirring during the reaction and of separation after the reaction. And the usage of artificial UV lamp has made the cost of photocatalyst treatment system high. Consequently, we studied that solar light/$TiO_2$ film system was designed and developed in order to examine disinfection characteristics of sewage wastewater treatment. The optimum conditions for disinfection such as solar light intensity, characteristic of sewage wastewater, amounts of $TiO_2$ and comparison of solar ligth/$TiO_2$ systems with UV light/$TiO_2$ system was examined. The results are as follows: (1) photocatalytic disinfection process with solar light in the presence of $TiO_2$ film more effectively killed total coliform (TC) than solar light or $TiO_2$ film absorption only. (2) The survival ratio of TC and residual ratio of organic material (BOD, CODcr) decreased with remain resistant material. (3) The survival ratio of TC and residual ratio of organic material (BOD, CODcr) decreased with the increase of amounts of $TiO_2$. (4) TC survival ratio decreased linearly with increasing UV light intensity. (5) The disinfection effect of solar light/$TiO_2$ slurry system decreased more than UV light/$TiO_2$ film systems. (6) The disinfection reaction followed first-order kinetics. We suggest that solar light instead of using artificial UV light was conducted to investigate the applicability of alternative energy source in the disinfection of TC and the degradation of organic material.

• Advances in concrete construction
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• 제9권6호
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• pp.537-545
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• 2020

In order to reduce the usage of cement slurry in grouting engineering and consume the tunnel excavation waste soil, a new geopolymeric grouting material (GGM) was prepared by combine completely weathered granite (CWG) and blast-furnace slag (BFS), which can be applied to in-situ grouting treatment of completely weathered granite strata. The results showed CWG could participate in the geopolymerization process, and GGM slurry has the characteristics of short setting time, high flowability, low viscosity, high stone rate and high mechanical strength, and a design method of grouting pressure based on viscosity evolution was proposed. By adjusted the content of completely weathered granite and alkali activator concentration, the setting time of GGM were ranged from 5 to 30 minutes, the flowability was more than 23.5 cm, the stone rate was higher than 90%, the compressive strength of 28 days were 7.8-16.9 MPa, the porosity were below 30%. This provides a novel grouting treatment and utilizing excavated soil of tunnels in the similar strata.