• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.366-367
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• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.59-59
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• 2009

현재 CMP분야는 광역 평탄화 반도체 소자의 집적화 및 소형화가 진행됨에 따라서 CMP 공정의 중요성은 날로 성장하고 있다. 하지만 이러한 CMP공정은 불가피하게도 scratch, pit, CMP residue와 같은 defect들을 발생시키고 있으며, 점점 선폭이 작아짐에 따라, 이러한 defect들이 반도체 수율에 미치는 영향은 심각해지고 있다. Defect들 중에 특히 scratch는 반도체에 치명적인 circuit failure를 일으키게 된다. 또한 반도체 내구성과 신뢰성을 감소시키게 되고, 누전전류를 증가시키는 등 바람직하지 못한 현상들이 생기게 된다. 본 연구에서는 scratch 와 같은 deflect들을 효율적으로 검출, 분석하고, scratch를 감소시키는데 그 목적이 있다. 본 실험을 위해 8" TEOS wafer와 commercial oxide slurry 및 friction polisher (Poli-500, G&P tech., Korea)를 사용하여 CMP 공정을 진행하였으며, CMP 공정조건은 각각 80rpm/80rpm/1psi(Platen speed/Head speed/Pressure)에서 1분 동안 연마를 한 후 scratch 발생 경향을 살펴보았다. CMP 후 wafer위에 오염되어 있는 slurry residue들을 제거하기 위해 SC-1, HF 세정을 이용하여 최적화된 post-CMP 공정기술을 제안하였다. Scratch 검출 및 분석을 위해 wafer surface analyzer (Surfscan 6200, Tencor, USA)와 optical microscope (LV100D, Nicon, Japan)를 사용하였다. CMP 공정 변수들에 따른 scratch 발생정도를 비교하였으며, scratch 발생 요인들에 따른 scratch 형태 및 발생정도를 살펴보았다. 최적화된 post-CMP 세정 조건은 메가소닉과 함께 SC-1 세정을 실시하여 slurry residue들을 제거한 후, HF 세정을 실시하여 잔여 오염물들을 제거하고 검출이 용이하도록 scratch를 확장시킬 수 있도록 제안하였으며, 100%의 particle removal efficiency (PRE)를 얻을 수 있었다. 실제 CMP 공정후 post-CMP 세정 단계별 scratch 개수를 측정한 결과, SC-1 세정 후 약 220개의 scratch가 검출되었으며, 검출되지 않았던 scratch가 HF 세정 후 확장되어 드러남에 따라 약 500개의 scratch 가 검출되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.568-574
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• 2000

We have been optimized tungsten(W) plug CMP(chemical mechanical polishing) characteristics using two different kinds of component of slurry and two different kinds of pad which have different hardness. The comparison of oxide film roughness on around W plug after polishing has been carried out. And W plug recess for consumable sets and dishing effect at dense area according to the rate of over-polishing has been investigated. Also the analysis of residue on surface after cleaning have been performed. As a experimental result we have concluded that the consumable set of slurry A and hard pad was good for W plug CMP process. After decreasing the rate of chemical reaction of silica slurry and adding two step buffering we could reduce the expanding of W plug void however we are still recognizing to need a more development for those kinds of CMP consumables.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.441-446
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• 2003

The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.569-572
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• 2003

In this study, we evaluated the dilute HF cleaning to reduce residual defects made by metal CMP process. The purpose of this test is to observe the existence of barrier metal damage during DHF cleaning on condition that it should not affect metal thin film reliability, so we will get rid of slurry residual particles as a main defect of the metal CMP process for the better yield. In-line defect data showed us that slurry residual particles were removed by DHF application. The HF rinse significantly reduced metal contamination levels and surface roughness. The best effect by additional oxide loss was discovered when Dilute HF condition is 10".

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.147-150
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• 2002

In this study, we evaluated the dilute HF Cleaning to reduce residual defects made by W CMP process. But, One point we should focus is It should not effect to metal thin film reliability. The purpose of this test is to verify barrier metal damage during HF cleaning and based on this result we get rid of slurry residue defect which is main defect of W CMP process for the better yield.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.149-153
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• 2003

Chemical mechanical polishing (CMP) technology for global planarization of multi-level inter-connection structure has been widely studied for the next generation devices. CMP process has been paid attention to planarized pre-metal dielectric (PMD), inter-layer dielectric (ILD) interconnections. Expecially, shallow trench isolation (STI) used to CMP process on essential. Recently, the direct STI-CMP process without the conventional complex reverse moat etch process has established by using slurry additive with the high selectivity between $SiO_2$ and $Si_3N_4$ films for the purpose of process simplification and n-situ end point detection(EPD). However, STI-CMP process has various defects such as nitride residue, tom oxide and damage of silicon active region. To solve these problems, in this paper, we studied the planarization characteristics using a high selectivity slurry(HSS). As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of HSS STI-CMP process.

• Carbon letters
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• v.19
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• pp.72-78
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• 2016

Spinnable pitches and carbon fibers were successfully prepared from petroleum or coal pyrolysis residues. After pyrolysis fuel oil (PFO), slurry oil, and coal tar were simply filtered to eliminate the solid impurities, the characteristics of the raw materials were evaluated by elemental analysis, ¹³C nuclear magnetic resonance spectrometer, matrix-assisted laser desorption/ionization time-of-flight mass spectrometer (MALDI-TOF-MS), and so on. Spinnable pitches were prepared for melt-spinning carbon fiber through a simple distillation under strong nitrogen flow, and further vacuum distillation to obtain a high softening point. Carbon fibers were produced from the above pitches by single-hole melt spinning and additional heat treatment, for oxidization and carbonization. Even though spinnable pitches and carbon fibers were processed under the same conditions, the melt-spinning and properties of the carbon fiber were different depending on the raw materials. A fine carbon fiber could not be prepared from slurry oil, and the different diameter carbon fibers were produced from the PFO and coal tar pitch. These results seem to be closely correlated with the initial characteristics of the raw materials, under this simple processing condition.

• Resources Recycling
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• v.14 no.2
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• pp.19-27
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• 2005

The recycling possibility of aluminum waste dross(AWD) as a ceramic raw material of porous light-weight material was examined. A aluminum waste dross was washed 4-7 consecutive times and roasted at 900$^{\circ}% for 1hour as pre-treatments. The properties of the pre-treatment of aluminum waste dross was investigated. It was conformed by XRD result that the spinel crystalline was grown in AWD, after roasting. After the roasted AWD was ground in aqueous state, the sodium hexaphosphate(SHP) as a dispersant which is used for stabilizing the concentrated slurry was added to the AWD slurry. The porous material was prepared by slurry foaming method with surfactant at room temperature. The foamed slurry volumes were 2 and 3 times of the original slurry volume. The properties of porous material with extended volume of 3 times was following: the porosity was about 84%, bulk density was 0.59 g/cm$^3$, the range of pore was from 50 ${\mu}m$ to 500 ${\mu}m$ and mean pore size was about 200 ${\mu}m$. AWD porous material was sintered at 1150$^{\circ}C-1250$^{\circ}C. It was colcluded that AWD was sintered well at 1200$^{\circ}C from material surface observation by SEM.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.4
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• pp.574-584
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• 2019

Objective: Research was conducted to test the effect of including fiber-rich feedstuffs in practical pig diets on nutrient digestibility, nitrogen balance and ammonia emissions from slurry. Methods: Three Vietnamese fiber sources were screened, namely cassava leaf meal (CL), cassava root residue (CR), and tofu by-product (TF). Accordingly, a control diet (Con) with 10% of dietary non-starch polysaccharides (NSP) and three test diets including one of the three fiber-rich feedstuffs to reach 15% of NSP were formulated. All formulated diets had the same level of crude protein (CP), in vitro ileal protein digestible and metabolisable energy, whereas the in vitro hindgut volatile fatty acid (VFA) production of the test diets was 12% to 20% higher than the control diet. Forty growing barrows with initial body weight at $28.6{\pm}1.93kg$ ($mean{\pm}standard$ deviation) were allocated to the four treatments. When pigs reached about 50 kg of body weight, four pigs from each treatment were used for a nitrogen balance trial and ammonia emission assessment, the remaining six pigs continued the second period of the feeding trial. Results: The TF treatment increased fecal VFA by 33% as compared with the control treatment (p = 0.07), suggesting stimulation of the hindgut fermentation. However, urinary N was not significantly reduced or shifted to fecal N, nor was slurry pH decreased. Accordingly, ammonia emissions were not mitigated. CR and CL treatments failed to enhance in vivo hindgut fermentation, as assessed by fecal VFA and purine bases. On the contrary, the reduction of CP digestibility in the CL treatment enhanced ammonia emissions from slurry. Conclusion: Dietary inclusion of cassava and tofu byproducts through an increase of dietary NSP from 10% to 15% might stimulate fecal VFA excretion but this does not guarantee a reduction in ammonia emissions from slurry, while its interaction with protein digestibility even might enhance enhanced ammonia emission.