• Elastomers and Composites
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• 제46권1호
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• pp.70-77
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• 2011

슬러리와 접하는 환경에서 사용되는 고무 소재의 슬러리 마모 거동을 평가하기 위해 새로운 형태의 슬러리 마모시험기(Slurry Wear Tester; SWT)가 본 연구에서 제안되었다. 슬러리 마모 거동을 평가하기 위한 기본 매트릭스로 천연고무(NR)와 클로로프렌고무(CR)가 선정되었다. SWT 장치의 챔버를 채우기 위한 유체로는 35% HCl 용액과 NaCl 용액이 사용되었다. SWT의 결과는 기존의 고무 마모시험 방법들중의 하나인 건식 상태에서 시험이 진행되는 Akron 마모시험의 결과와 비교를 하였다. Akron 마모 시험의 결과에 따르면 CR이 NR 보다 더 빠른 속도로 마모가 됨을 알 수 있었으며 재료의 히스테레시스 특성이 마모에 영향을 미침을 알 수 있었다. 그러나 SWT 결과에 따르면 CR과 NR의 슬러리 마모거동은 큰 차이가 없었으며 더구나 산의 농도와 HCl 용액과 NaCl 용액에 침지된 시간에 따라서도 슬러리 마모속도에는 큰 영향이 없었다. 이는 슬러리에 포함된 유체가 마모지와 시편 사이의 마찰을 감소시켰기 때문이라고 사료되었다. 또한 Akron 마모 시험의 경우 고무 소재의 히스테레시스가 마모에 영향을 미쳤지만, SWT의 경우 유체는 반복 변형에 의해 발생되는 열을 감소시키고 마모지 표면에 남아있는 마모 찌꺼기들을 제거하였기 때문에 Akron 마모 시험의 결과와는 다른 결과를 나타내었다. 따라서 슬러리에 의한 고무 소재의 마모를 평가하는데 있어서 기존의 방식인 건식방법으로 마모 거동을 평가할 경우 잘못된 결과를 초래할 수 있음을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.74-79
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• 2007

Most studies on copper Chemical Mechanical Planarization (CMP) have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to various factors related to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate and mechanically analyze the roles of slurry components in the formation of the uniformity in Cu CMP. In this paper, Cu CMP was performed using citric acid($C_{6}H_{8}O_{7}$), hydrogen peroxide($H_{2}O_{2}$), colloidal silica, and benzotriazole($BTA,\;C_{6}H_{4}N_{3}H$) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. All the results of this study showed that within-wafer non-uniformity(WIWNU) of Cu CMP could be controlled by the contents of slurry components.

• 한국기계가공학회지
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• 제2권1호
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• pp.32-38
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• 2003

Engineering ceramics have many unique characteristics both in mechanical and physical properties such as high temperature hardness, high thermal, chemical and electrical resistance. However, its machinability is very poor in conventional machining due to its high hardness and severe tool wear. In the current experimental study alumina($Al_2O_3$) was ultrasonically machined using SiC abrasives under various machining conditions to investigate the material removal rate and surface quality of the machined samples. Under the applied amplitude of 0.02mm, 27kHz frequency, three slurry ratios (abrasives water by weight) of 11, 13 and 15 with different tool shapes and applied pressure levels, the machining was conducted. Using the mesh number of 240 abrasive, slurry ratio of 11 and static pressure of $25kg/cm^2$, maximum material removal rate of $18.97mm^3/mm$ was achieved with mesh number of 600 SiC abrasives and static pressure of $30kg/cm^2$, best surface roughness of $0.76{\mu}m$ Ra was obtained.

• 대한기계학회논문집A
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• 제27권12호
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• pp.2085-2091
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• 2003

An ultrasonic machining process has been known as efficient and economical means fer precision machining of glass or ceramic materials. However, because of its complexity, the mechanism of the machining process is still not well understood. Therefore, it is hard to optimize the process parameters effectively. The conventional ultrasonic machining which uses the abrasive slurry only, furthermore, is time-consuming and gives the relatively rough surface. In order to increase the material removal rate and improve the integrity of the machined surface, we have introduced the novel ultrasonic machining technique, Chemical-assisted UltraSonic Machining(CUSM). The desktop-style micro ultrasonic machine has been developed and the z-axis feed is controlled by the constant load control algorithm. To obtain the chemical effects, the low concentration HF(hydrofluoric acid) solution, which erodes glass, added to alumina slurry. Through various experiments and comparison with conventional results, the superiority of CUSM is verified. MRR increases over 200%, the surface roughness is improved and the machining load decreases dramatically.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.167-172
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• 2006

Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

• Journal of Mechanical Science and Technology
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• 제20권2호
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• pp.227-233
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• 2006

Engineering ceramics have many unique characteristics both in mechanical and physical properties such as high temperature hardness, high thermal, chemical and electrical resistance. However, its machinability is very poor in conventional machining due to its high hardness and severe tool wear. In the current experimental study, alumina $(Al_2O_3)$ was ultrasonically machined using SiC abrasives under various machining conditions to investigate the material removal rate and surface quality of the machined samples. Under the applied amplitude of 0.02mm, 27kHz frequency, three slurry ratios of 1:1, 1:3 and 1:5 with different tool shapes and applied static pressure levels, the machining was conducted. Using the mesh number of 240 abrasive, slurry ratio of 1:1 and static pressure of $2.5kg/cm^2$, maximum material removal rate of $18.97mm^3/min$ was achieved. With mesh number of 600 SiC abrasives and static pressure of $3.0kg/cm^2$, best surface roughness of $0.76{\mu}m$ Ra was obtained.

• Tribology and Lubricants
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• 제37권6호
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.64-64
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• 2003

고집적화된 시스템 LSI 반도체 소자 제조 공정에서 소자의 고속화 및 고성능화에 따른 배선층수의 증가와 배선 패턴 미세화에 대한 요구가 갈수록 높아져, 광역평탄화가 가능한 STI CMP(Shallow Trench Isolation Chemical-Mechanical-Polishing)공정의 중요성이 더해가고 있다. 이러한 STI CMP 공정에서 세리아 슬러리에 첨가되는 계면활성제의 농도에 따라 산화막과 질화막 사이의 연마 선택비를 제어하는 것이 필수적 과제로 등장하고 있다. 일반적인 CMP 공정에서 압력 증가에 따른 연마 제거량이 Prestonian 거동을 나타내는 반면, 연마 입자의 크기를 변화시켜 계면활성제의 농도를 달리 하였을 경우, 압력 변화에 따라 Non-Prestonian 거동이 나타나는 것을 고찰할 수 있었다. 따라서 본 연구에서는 세리아 슬러리 내에 첨가되는 계면활성 제의 농도와 연마입자의 크기를 달리한 후, 압력을 변화시킴으로 나타나는 non-Prestonian 거동에 미치는 영향에 대하여 연구하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.65-65
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• 2003

Chemical mechanical polishing (CMP) is one of the most important processes in recent ULSI (Ultra Large Scale Integrated Circuit) manufacturing technology. Recently, ceria slurries with surfactant have recently been used in STI-CMP,[1] became they have high oxide-to-nitride removal selectivity and widen the processing margin The role of the abrasives, however, on the effect of planarization on STI-CMP is not yet clear. In this study, we investigated how the crystal characteristic affects the planarization efficiency of wafer surface with controlling crystallite size and poly crystalline abrasive size independently.