• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.537-542
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• 2004

Machinble Ceramics have some excellent properties as the material for the mechanical components. It is, however, very difficult to grind ceramics with high efficiency because of their high strength, hardness and brittleness. Lapping used diamond slurry and lapping by in-process electrolytic dressing is developed to solve this problem. On this paper, a comparative study of processing ability of lapping used diamond slurry and lapping by in-process electrolytic dressing.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.603-604
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro- structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_3$ abrasive particles in CMP slurry.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.605-606
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2237-2238
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1269-1270
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1271-1272
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.35-40
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• 2007

An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.549-554
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• 2006

In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1729-1730
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_{3}$ abrasive particles in CMP slurry.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1731-1732
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.