• Title/Summary/Keyword: Skew-calibration circuit

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The timing do-skew modeling and design in a high speed digital system (고속 디지털 시스템에서 전달 시간차의 보정 모델링 및 구현)

  • Oh, Kwang-Suhk
    • Proceedings of the KIEE Conference
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    • 2002.11c
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    • pp.601-604
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    • 2002
  • In this paper, the timing do-skew modeling for a high speed logic tester channels is developed. The time delay of each channel in a logic tester are different from other channels and it can produce timing error in a test. To get the best timing accuracy in the test with a logic tester, the timing skew must be compensated. The timing skew of channels is due to the difference of time delay of pin-electronics devices composing channels and length of metal line placed on PCB. The expected timing difference of channels can be calculated according to the specifications of pin electronics devices and strip line modeling of PCB. With the calculated delay time, the timing skew compensation circuit has been designed. With the timing skew compensation circuit, the timing calibration of a logic tester can be peformed easily and automatically without other time measuring instruments. The calibration method can then be directly applied to logic testers in mass production lines.

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A Wide - Range Dual-Loop DLL with Programmable Skew - Calibration Circuitry for Post Package (패키지후 프로그램을 이용 스큐 수정이 가능한 광범위한 잠금 범위를 가지고 있는 이중 연산 DLL 회로)

  • Choi, Sung-Il;Moon, Gyu;Wee, Jae-Kyung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.6
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    • pp.408-420
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    • 2003
  • This paper describes a Delay Locked Loop (DLL) circuit having two advancements : 1) a dual loop operation for a wide lock-range and 2) programmable replica delays using antifuse circuitry and internal voltage generator for a post-package skew calibration. The dual loop operation uses information from the initial time-difference between reference clock and internal clock to select one of the differential internal loops. This increases the lock-range of the DLL to the lower frequency. In addition, incorporation with the programmable replica delay using antifuse circuitry and internal voltage generator allows for the elimination of skews between external clock and internal clock that occur from on and off-chip variations after the package process. The proposed DLL, fabricated on 0.16m process, operates over the wide range of 42MHz - 400MHz with 2.3v power supply. The measured results show 43psec peak-to-peak jitter and 4.71psec ms jitter consuming 52㎽ at 400MHz.

A design of analog ZQ calibration with small CIO capacitance (CIO capacitance가 작은 analog ZQ calibration 의 설계)

  • Park, Kyung-Soo;Choi, Jae-Woong;Chae, Myung-Joon;Kim, Ji-Woong;Kwack, Kae-Dal
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.577-578
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    • 2008
  • This paper proposes new analog ZQ calibration scheme. Proposed analog ZQ calibration scheme is for minimizing the reflection which degrade the signal integrity. And this scheme is for minimizing CIO capacitance. It is simulated under 1.5v supply voltage and samsung 0.18um process. Power consumption of proposed analog ZQ calibration circuit was improved by 32%. Under all skew, temperature from $30^{\circ}C$ to $90^{\circ}C$ and Monte carlo simulation, quantization error of RZQ(=$240{\Omega}$) is less han 1.07%.

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Chip Implementation of 830-Mb/s/pin Transceiver for LPDDR2 Memory Controller (LPDDR2 메모리 컨트롤러를 위한 830-Mb/s/pin 송수신기 칩 구현)

  • Jong-Hyeok, Lee;Chang-Min, Song;Young-Chan, Jang
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.659-670
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    • 2022
  • An 830-Mb/s/pin transceiver for a controller supporting ×32 LPDDR2 memory is designed. The transmitter consists of eight unit circuits has an impedance in the range of 34Ω ∽ 240Ω, and its impedance is controlled by an impedance correction circuit. The transmitted DQS signal has a phase shifted by 90° compared to the DQ signals. In the receive operation, the read time calibration is performed by per-pin skew calibration and clock-domain crossing within a byte. The implemented transceiver for the LPDDR2 memory controller is designed by using a 55-nm process using a 1.2V supply voltage and has a maximum signal transmission rate of 830 Mb/s/pin. The area and power consumption of each lane are 0.664 mm2 and 22.3 mW, respectively.