• Journal of Industrial Technology
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• v.27 no.B
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• pp.137-144
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• 2007

Sintering condition and various chemical composition of bond materials for micro-blades were studied. The methods mixing of pure powders and using pre-alloyed powders for compaction and sintering were compared and optimized in terms of the evaluation of bending strength and fractographic study. The effect of the amount of graphite as a lubricant and diamond abrasive on the strength of sintered bond materials and fracture toughness was investigated. The strength decreased with increasing the amount of graphite and diamond abrasive.

• Journal of Powder Materials
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• v.3 no.3
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• pp.167-173
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• 1996

The effect of ball milling on the pressureless sintering of MoSi$_2$ was investigated. Ball milling was conducted at 70 rpm for 72 hours using different balls and vessels: one used tungsten carbide balls in a plastic vessel(referred as B-powder) and the other stainless steel ball in a stainless steel vessel(referred as C- powder). The powder was compacted with 173MPa and subsequently sintered at the temperature range of 1150 $^{\circ}C$ and 1450 $^{\circ}C$ in H$_2$, atmosphere. Sintered density was measured and scanning electron micrograph was observed. Over 90% of the theoretical density was attained at 1250 $^{\circ}C$ within 10 minutes for C-powders, while the similar densification required a sintering temperature of 1450 $^{\circ}C$ for B-powders. Such a difference in sinterability between B and C-powders was discussed in terms of the effect of particle size reduction and activated sintering caused by Ni and/or Fe introduced during ball milling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.328-329
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• 2009

This paper presents the effect of organic Ag complex sintering temperature on the MEH-PPV photoluminescence (PL) properties. MEH-PPV and organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 100 to $200^{\circ}C$ and sintering time was 5 min. The Ag film sintered at temperature higher than $120^{\circ}C$ shows very low sheet resistance less than $0.5\;{\Omega}{/\square}$. The coated MEH-PPV measure photoluminescence (PL) intensity at 580 nm. The PL peak was shifted to the higher wavelength with increasing the sintering temperature.

• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.687-692
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• 2001

Silicon nitride-La-silicon oxynitride ceramics were fabricated by Spark Plasma Sintering (SPS). The density, crystalline phase and microstructure were compared with those obtained by Hot Pressing (HP). The full density was achieved within 40 min by spark plasma sintering at 1$650^{\circ}C$, whereas the same result was required by hot pressing with a dwell time of 500 min at higher temperature. There were some differences in the microstructure and second phases in the sintered ceramics, which are attributed to the rapid densification in the spark plasma sintering. The fine and acicular grain microstructure appeared in spark plasma sintering.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.956-962
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• 1992

The predominant sintering mechanisms of low firing temperature ceramic substrate which consists of borosilicate glass containing alumina as a filler are the rearrangement of alumina particles and the viscous flow of glass powders. In this system, sintering condition depends on the volume ratio of alumina to glass and on the particle size. When the substrate contains about 35 vol% alumina filler and the average alumina particle size is 4 $\mu\textrm{m}$, the best firing condition is obtained at the temperature range of 900∼1000$^{\circ}C$. The extensive rearrangement behavior occurs at these conditions, and the optimum sintering condition is attained by smaller size of glass particles, too. The formation of cristobalite during sintering causes the difference of thermal expansion coefficient between the substrate and Si chip. This phenomenon degradates the capacity of Si chip. Therefore, the crystallization should be prevented. In the alumina filled borosilicate glass system, the crystallization does not occur. This effect may have some relation with aluminum ions in alumina. For aluminum ions diffuse into glass matrix during sintering, functiong as network former.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.715-720
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• 2002

Silicon nitride samples with aligned whisker seeds were prepared with different amounts of yttria and alumina as the sintering additives. Their sintering behaviors and the microstructural developments between 2123K and 2323K were examined. The sample with larger amount of the sintering additives showed faster densification and grain growth. Even though addition of the aligned whisker seeds slightly retarded densification of silicon nitride, it improved the flexural strength and the fracture toughness. Both the flexural strength and the fracture toughness of silicon nitride with the aligned whisker seeds were increased as the amount of the sintering additives was increased.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.1-6
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• 1986

The shrinkage rate of solid state sintering has been theoretically derived by combining the rate equation of material transport and the net free energy change resulting from the decrease of solid-vapor interface and the increase of grain boundary during sintering. For a sinteing model an idealized situation of the spherical particles with BCC packing was taken as the initial condition and the shrinkage was assumed to occur by forming the flat circualr grain boundaries on each particle. The plotted shrinkage rates as a function of grain boundary to surface energy ratio $(gamma_g/gamma_s)$ have shown that the relative density increases linearly at the initial stage of sintering but the shrinkage rate is decreased upon further sintering due to a decrease in driving force for densificaton. It has been also shown that the densification is critically affected by the $gamma_g/gamma_s$ ratio. In order to get the complete densificatin the ratio should be less than $sqrt{3}$. Any additive or atmospheric condition causing the decrease of$_g/gamma_s$ ratio will enhance sintering.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.344-349
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• 2014

$RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.169-176
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• 1996

The specimens which were prepared from $\alpha$-Si3N4 with additions of YAG(3Y2O3.5Al2O3)-10 wt% and various AlN contents were sintered in N2 atmosphere at 1$700^{\circ}C$ The effect of $\alpha$,$\beta$-solid solution contents and sintering time on mechanical properties were investigated. As the content of $\beta$-solid solution and sintering time increased the hardness is reduced but the hardness of specimen sintered over 10 hours is constant irrespective of sintering time. While the fracture toughness increased with increasing of $\beta$-solid solution and sintering time. The fracture toughness of specimen with 80% $\beta$-solid solution content increased from 3.89 to 6.66 MPam1/2 with sintering sintering up to 20 hours/ But the amount of increased fracture toughness of specimen with below 20% $\beta$-solid solution content is not significant.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.601-610
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• 1997

In cofiring of multilayered alumina with tungsten, the change of camber with lamination condition was experimented and the effect of sintering shrinkage of alumina and tungsten was investigated. From the exact measurement of sintering shrinkage of tungsten thick film, as lamination pressure increased, the sintering shrinkage of alumina decreased but that of tungsten thick film was not changed. So it was though that the main factor which induced the sintering shrinkage difference between ceramics and metal with lamination condition was the change of sintering shrinkage of ceramics. In case of high lamination pressure, high green sheet density, the cofired specimen showed low camber due to low shrinkage difference between alumina and tungsten and there was a linear relation between camber and shrinkage difference. It was found that this shrinkage difference could change the thickness of tungsten film and the microstructure within via hole during cofiring.