• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.619-625
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• 1998

The effect of softening point and glass amount of glass frit on the sintering behavior of low temperature cofirable glass/ceramic composites was studied and according to these results, glass/ceramic composites with high sintered density was fabricated. The density of composites was increased as the glass amount was increased. In case of using the glass with low softening point, the deformation of specimen was occurred though the ratio of the glass amount in the specimen was low. But, in case of using the glass with high softening point, the sintered density of composites was increased in accordance with glass amount. With the specimen of high softening point, the deformation was not happened. Therefore, it was found that the densification was progressed continuously in high glass amount. From the study on the effect of softening point of glass on sintering behavior, the suitable softening point and glass amount for fabrication of glass/ceramic composites can be anticipated. When glass frit with softening point of $790^{\circ}C$ was chosen according to this result, low temperature cofirable glass/ceramic composites with high density (97%) at $900^{\circ}C$ was fabricated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.75-81
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• 2007

Densification and grain growth have been investigated in 5 wt% $U_3O_8$ seeded $UO_2$ and compared with those of the common $UO_2$ pellet. $UO_2$ compacts and $U_3O_8$ seeded $UO_2$ compacts were sintered at $1300{\sim}1700^{\circ}C$ for 0 h to 4 h. Density and grain size of the sintered pellets were measured by the water immersion method and the image analyzer, respectively. The seeded pellet has a slightly lower density during the intermediate sintering stage. However, the difference of density between two pellets decreases to about 0.5%TD with increasing the sintering temperature. The grain size of the two pellets is similar until $1600^{\circ}C$ but that of the seeded pellet rapidly increases with increasing the sintering temperature.

• Journal of Ocean Engineering and Technology
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• v.25 no.3
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• pp.28-33
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• 2011

The thermal shock properties of SiC materials were investigated for high temperature applications. In particular, the effect of thermal shock temperature on the flexural strength of SiC materials was evaluated, in conjunction with a detailed analysis of their microstructures. The efficiency of a nondestructive technique using ultrasonic waves was also examined for the characterization of SiC materials suffering from a cyclic thermal shock history. SiC materials were fabricated by a liquid phase sintering process (LPS) associated with hot pressing, using a commercial submicron SiC powder. In the materials, a complex mixture of $Al_2O_3$ and $Y_2O_3$ powders was used as a sintering additive for the densification of the microstructure. Both the microstructure and mechanical properties of the sintered SiC materials were investigated using SEM, XRD, and a three point bending test. The SiC materials had a high density of about 3.12 Mg/m3 and an excellent flexural strength of about 700 MPa, accompanying the creation of a secondary phase in the microstructure. The SiC materials exhibited a rapid propagation of cracks with an increase in the thermal shock temperature. The flexural strength of the SiC materials was greatly decreased at thermal shock temperatures higher than $700^{\circ}C$, due to the creation of microcracks and their propagation. In addition, the SiC materials had a clear tendency for a variation in the attenuation coefficient in ultrasonic waves with an increase in thermal shock cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.145-152
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• 2006

The densification behavior and electrical conductivity of $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics were investigated with the strontium gallate concentration ranging from 0 to $5\;mol\%$. Both the sintered density and grain size were found to increase rapidly up to $0.5\;mol\%$ $Sr_2Ga_2O_5$, and then to decrease with further addition. Dense $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics with $97\%$ of the theoretical density could be obtained for $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen sintered at $1250^{\circ}C$ for 5 h, whereas pure $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics needed to be sintered at $1550^{\circ}C$ in order to obtain an equivalent theoretical density, Electrical conductivity was measured as a function of dopant content, over the temperature range of $350\;-\;600^{\circ}C$ in air. Total conductivity of $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen showed the maximum conductivity of $2.37{\times}10^{-2}{{\Omega}-1}{\cdot}cm^{-1}$ at $500^{\circ}C$, The addition of strontium gallate was found to promote the sintering properties and electrical conductivities of $Gd_2O_3$-doped $CeO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.210-214
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• 2016

We investigated the sintering behavior and piezoelectric properties of lead-free $(K_{0.5}Na_{0.5})NbO_3$ ceramics co-doped with excess 0.01 mol ZnO and x mol $MnO_2$, where x was varied from 0 to 0.03. Excess $MnO_2$ addition was found to retard the grain growth and densification during sintering. However, 0.005 mol $MnO_2$ addition improved the piezoelectric properties of 0.01 mol ZnO added $(K_{0.5}Na_{0.5})NbO_3$ ceramics. The planar mode piezoelectric coupling coefficient, electromechanical quality factor, and piezoelectric constant $d_{33}$ of 0.01 mol ZnO and 0.005 mol $MnO_2$ added specimen were 0.40, 304, and 214 pC/N, respectively.

• Journal of Powder Materials
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• v.25 no.2
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• pp.144-150
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• 2018

$Al_2O_3-SiC$ ceramic composites are produced using pressureless sintering, and their plasma resistance, electrical resistance, and mechanical properties are evaluated to confirm their applicability as electrostatic-discharge-safe components for semiconductor devices. Through the addition of Mg and Y nitrate sintering aids, it is confirmed that even if SiC content exceeded 10%, complete densification is possible by pressureless sintering. By the uniform distribution of SiC, the total grain growth is suppressed to about $1{\mu}m$; thus an $Al_2O_3-SiC$ sintered body with a high strength over 600 MPa is obtained. The optimum amount of SiC to satisfy all the desired properties of electrostatic-discharge-safe ceramic components is obtained by finding the correlation between the plasma resistance and the electrical resistivity as a function of SiC amount.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.283-286
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• 2012

(1-X)$(Na_{0.5}K_{0.5})NbO_3-XK_{5.4}Cu_{1.3}Ta_{10}O_{29}$ (NKN-KCT) lead-free piezoelectric ceramics have been synthesized by the conventional solid state sintering method, and their sinterability and piezoelectric properties were investigated. Typically, this material is sintered between 1,025 and $1,100^{\circ}C$ for 2 hours to achieve the required densification. Crystalline structures and Microstructures were analyzed by X-ray diffraction and scanning electron microscope. The density, dielectric constant (${\varepsilon}_r$), piezoelectric constant $d_{33}$, electromechanical coupling factor $k_p$ and mechanical quality factor $Q_m$ value of the NKN ceramics depended upon the KCT content and the sintering temperature. In particular, the KCT addition to NKN greatly improved the mechanical quality factor $Q_m$ value. The ceramic with X = 1.0 mol% sintered at $1,050^{\circ}C$ exhibited optimum properties (${\varepsilon}_r$=246, $d_{33}$=95, $k_p$=0.38 and $Q_m$=1,826). These results indicate that the ceramic is a promising candidate material for applications in lead free piezoelectric transformer and filter materials.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1350-1355
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• 1999

Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.