• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1267-1273
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• 2009

The correlation between the sintering temperature and dielectric properties in the $Nb^{5+}\;and\;Ta^{5+}$ doped BaTi$O_3$ solid solutions have been investigated. The samples were sintered at temperatures ranging from 1250 to 1350 ${^{\circ}C}$ for 4 h in air. SEM, XRD and SEM/EDS techniques were used to examine the structure of the samples with particular focus on the incorporation of $Nb^{5+}\;and\;Ta^{5+}$ ions into the BaTi$O_3$ crystal lattice. The X-ray diffraction peaks of (111), (200) and (002) planes of BaTi$O_3$ solid solution doped with different fractions of $Nb^{5+}\;and\;Ta^{5+}$ were investigated. The dielectric properties were analyzed and the relationship between the properties and structure of doped BaTi$O_3$ was established. The fine-grain and high density of the doped BaTi$O_3$ ceramics resulted in excellent dielectric properties. The dielectric properties of this solid solutions were improved by adding a small amount of dopants. The transition temperature of the 1.0 mole% $Ta^{5+}$ doped BaTi$O_3$ solid solution was $\sim$110 ${^{\circ}C}$ with a dielectric constant of 3000 at room temperature. At temperatures above the Curie temperatures, the dielectric constant followed the Curie-Weiss law.

• Electrical & Electronic Materials
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• 제9권10호
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Transactions of the Korean Society of Machine Tool Engineers
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• 제17권4호
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• pp.104-111
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• 2008

The objective of this study is to evaluate micro end-milling characteristics and tool wear behavior of AlN-hBN composites. First, AlN based composites with hBN contents in the range of 10 to 20vol% were prepared by hot-pressing. Vickers hardness and flexural strength of the prepared composite specimens were measured and compared according to the vol% of hBN variations. Then, cutting force variations were measured and analyzed using a tool dynamometer during the micro end-milling experiments; and machined surface shapes and roughness were investigated using a 3D non-contact type surface profiler. After micro end-milling, worn tools were investigated using a tool microscope and SEM images. From the experimental results, it can be observed that the cutting forces decreased, and surface qualities were improved with increasing hBN contents. At low content of hBN, tool chipping was observed; and tool wear rate decreased with increasing hBN contents. The results of this study insist that proper machining conditions, including tool wear behavior investigation, should be determined for the micro end-milling of AlN-hBN composites for its further application.

• Korean Journal of Materials Research
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• 제15권12호
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• pp.756-759
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• 2005

A lead free piezoelectric material, bismuth sodium barium titanate $(Bi_{0.5}Na_{0.5})_{0.94}Ba_{0.06}TiO_3$ (BNBT), was considered as an environment-friendly alternatives for the current PZT system. A perovskite BNBT was synthesized by conventional bulk ceramic processing technique. In order to improve piezoelectric properties, $La_2O_3$ as a dopant was incorporated into the BNBT system up to 0.025 moi, ana the effects on subsequent the piezoelectric ana dielectric properties were systematically investigated. With increasing $La_2O_3$ contents, the equilibrium grain shape was remarkably evidenced and sintered density was increased. Piezoelectric and dielectric properties were s]town to have maximum values at the $La_2O_3$ contents of 0.02 mol. $La^{3+}$ ions seemed to act as a softener in the BNBT system and to enhance dielectric and piezoelectric properties in this study.

• Journal of the Korean Ceramic Society
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• 제40권11호
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• pp.1120-1126
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• 2003

Yttrium Aluminum Garnet (YAG) powders were prepared by precipitation of Y hydroxides during milling of alumina powders. The powder calcined at 1200$^{\circ}C$ for 4 h contained a small amount of Yttrium Aluminum Monoclinic (YAM) in addition to YAG. However, phase-pure YAG was obtained in the compact of the milled powder with an average particle size of 0.57 ${\mu}$m at 1300$^{\circ}C$, which is much lower than those (l500∼1600$^{\circ}C$) for a mixed oxide method. The powder was found to exhibit an excellent sinterability regardless of the addition of a sintering aid, SiO$_2$(350 ppm Si). The undoped sample were sintered to a relative density of 98% at l600$^{\circ}C$. In contrast, the addition of SiO$_2$ caused a considerable densification to occur at 1500$^{\circ}C$ and the relative density reached 97.7%. But the sintering aid had little effect on the densification at 1600$^{\circ}C$, showing a similar relative density to the undoped sample.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.102-110
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• 1996

The Mg-PSZ/$Al_2O_3$ fibers were fabricated by the sol-gel method. The added $Al_2O_3$ amounts were varied from 5 to 20 mol%. The phase transformation studies of a drawn Mg-PSZ/$Al_2O_3$ fibers were investigated by use of X-ray diffraction, IR and Raman spectroscopy. Microstructure and tensile strength of fibers were subjected to scanning electron microscopy and tensile strength tester. When $Al_2O_3$ was added to the Mg-PSZ fibers, it was found out from the analysis of XRD patterns and Raman spectra that a small amount of crystalline spinel($MgAl_2O_4$) started to form due to the reaction between $Al_2O_3$ and MgO, at $1000^{\circ}C$, and the phase transformation temperature of $ZrO_2$ crystal phase at different sintering temperatures increased. Also, the rapid grain growth with average size of 2.0 ${\mu}m$ shown in Mg-PSZ fiber at $1500^{\circ}C$ was considerably suppressed to 0.39 ${\mu}m$ by adding $Al_2O_3$ at the same temperature. When the Mg-PSZ/$Al_2O_3$ fibers containing 5 mol% $Al_2O_3$ were sintered $800^{\circ}C$ for 1 hr, average tensile strength of fibers was 0.9 GPs at diameters of 20 to 30 ${\mu}m$, but as the sintering temperatures was increased to $1000^{\circ}C$ for 1 hr, average tensile strength of fibers increased to 1.2 GPa in the same diameter range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.258-258
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• 2007

KNN계 세라믹스는 $400^{\circ}C$ 이상의 높은 큐리온도와 압전특성을 가져 Pb대체용 소재로 각광을 받고 있고 많은 연구들이 진행중이다. 하지만 potassium의 수분과의 반응성이 강하고 녹는점이 낮아 소결시 K2O의 휘발로 인해 화학양론적인 정확도를 맞추기가 어려운 단점을 가지고 있다. 이러한 단점을 보완하기 위하여 Hot pressing, Hot forging, SPS등 여러 가지 방법을 이용한 연구가 보고되었다. 본 연구에서는 낮은 소결밀도를 향상시키기 위하여 성형압과 성형방법을 달리하여 성형밀도에 따른 소결 밀도와 압전 특성 변화에 대하여 관찰하였다. 넓은 범위의 성형밀도를 얻기 위하여 낮은 성형압을 가할 수 있는 기계적으로 작동하는 press와 높은 성형밀도를 가할 수 있는 유압식 press를 사용하였고, 양산성을 고려하여 일반적인 세라믹 제조공정을 이용하였다.

• Proceedings of the KIEE Conference
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제15권1호
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• pp.30-36
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• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.