• 한국분말재료학회지
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• 제25권2호
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• pp.144-150
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• 2018

$Al_2O_3-SiC$ ceramic composites are produced using pressureless sintering, and their plasma resistance, electrical resistance, and mechanical properties are evaluated to confirm their applicability as electrostatic-discharge-safe components for semiconductor devices. Through the addition of Mg and Y nitrate sintering aids, it is confirmed that even if SiC content exceeded 10%, complete densification is possible by pressureless sintering. By the uniform distribution of SiC, the total grain growth is suppressed to about $1{\mu}m$; thus an $Al_2O_3-SiC$ sintered body with a high strength over 600 MPa is obtained. The optimum amount of SiC to satisfy all the desired properties of electrostatic-discharge-safe ceramic components is obtained by finding the correlation between the plasma resistance and the electrical resistivity as a function of SiC amount.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1205-1209
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• 2003

We investigated the effects of calcination temperatures on the sintering behaviors and microwave dielectric Properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ system. Highly densified samples were obtained at the sintering temperatures below 100$0^{\circ}C$ with additions of 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$. From the examination of the existing phases and microstructures before and after sintering of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ system which is calcined at the various temperatures ranging from 80$0^{\circ}C$ to 100$0^{\circ}C$, it was found that higher Q${\times}$ $f_{o}$ values were obtained when unreacted phases in calcined body were reduced. When calcined at 100$0^{\circ}C$ and sintered at 90$0^{\circ}C$, it consists of hexagonal as. a main phase with uniform microstructure and exhibits Q${\times}$ $f_{o}$ value of 42,000 GHz and dielectric constant of 22. 22. 22.

• 한국세라믹학회지
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• 제43권8호
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• pp.504-508
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• 2006

Functionally gradient porous $Al_2O_3-(t-ZrO_2)/HAp$ composites consist of 3 layers were fabricated using the multi-pass extrusion process at the various temperatures. The continuous pores were homogeneously formed in the $2^{nd}$ passed samples and their size was about $180{\mu}m$ in diameter. In the porous composites sintered at $1200-1400^{\circ}C$, the relative density and bending strength increased with the sintering temperature. The maximum values of relative density and bending strength in the $2^{nd}$ passed $Al_2O_3-(t-ZrO_2)/HAp$ composites were 62.2% and 107.8 MPa, respectively. In order to investigate the growth behavior of osteogenic cells on the functionally gradient porous $Al_2O_3-(t-ZrO_2)/HAp$ composites, an in vitro test was performed, using human osteoblast-like MG-63 cells. The cells were well attached and grown on the rough surface of the inside of the functionally gradient porous body.

• 한국세라믹학회지
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• 제44권6호
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• pp.291-296
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• 2007

Porous $Al_2O_3-(m-ZrO_2)$ composites were fabricated by pressureless sintering, using different volume percentages (40% - 60%) of poly methyl methacrylate (PMMA) powders as a pore-forming agent. The pore-forming agent was successfully removed, and the pore size and shape were well-controlled during the burn-out and sintering processes. The average pore size in the porous $Al_2O_3-(m-ZrO_2)$ bodies was about $200\;{\mu}m$ in diameter. The values of relative density, bending strength, hardness, and elastic modulus decreased as the PMMA content increased; i.e., in the porous body (sintered at $1500^{\circ}C$) using 55 vol % PMMA, their values were about 50.8%, 29.8 MPa, 266.4 Hv, and 6.4 GPa, respectively. To make the $Al_2O_3-(m-ZrO_2)$/polymer hybrid composites, a bioactive polymer, such as PMMA, was infiltrated into the porous $Al_2O_3-(m-ZrO_2)$ composites. After infiltration, most of the pores in the porous $Al_2O_3-(m-ZrO_2)$ composites, which were made using 60 vol % PMMA additions, were infiltrated with PMMA, and their values of relative density, bending strength, hardness, and elastic modulus remarkably increased.

• 한국결정성장학회지
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• 제3권2호
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• pp.176-184
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• 1993

$Li_2O-Al_2O_3-SiO_2$계 유리조성에서, 특히 주결정상으로 $\beta$-spodumene을 석출시킬 수 있는 조성영역에서 $P_2O_5, TiO_2, ZrO_2$ 등을 첨가하여 용융한 후 소결법을 이용하여 이론밀도에 가까운 결정화 유리를 만들기 위한 최적 열처리 조건, 유리 분말의 입도 변화에 따란 영향과 그 때의 물성을 시차열분석, X-선 회절분석, 비중 측정, 열팽창 측정, 전자현미경 관찰 등을 통하여 연구하였다. $P_2O_5$를 첨가하여 소결법으로 결정화할 때 소결을 증진시키는 효과가 있었으며 9wt% 첨가한 경우가 가장 치밀한 것으로 나타났다. 최적의 열처리 조건은 $740^{\circ}C$에서 소결하여 치밀화를 시키고$ 950^{\circ}C$에서 결정화를 시켰을 때로서 상대밀도는 90% 이상이었으며 열팽창계수는 $-1{\times}10^{-7}/^{\circ}C$ 정도로서 부팽창인 것으로 나타났다.

• 한국재료학회지
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• 제11권6호
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• pp.460-464
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• 2001

Pechini방법으로 제조한 La$_{0.8}$Ca$_{0.2}$CrO$_3$CLC소결체와 La$_{0.8}$Ca$_{0.2}$CrO$_3$CLC-Green체를 YSZ에 적층한 후 온도의 함수로 계면에서의 미세구조와 성분이동 등의 거동을 고찰하였다. CLC-G/CLC와 CLC/YSZ계면에서의 CLC면은 반응온도에 상관없이 XRD 관찰에서 주상은 La$_{1-x}$ Ca$_{x}$CrO$_3$그리고 CLC와 반응하지 않은 YSZ면의 결정 상은 cubic-ZrO$_2$으로 각각 나타났다. CLC/YSZ반응 계면의 성분이동은 Zr > La>>Cr>>>Ca 순이었으며, 온도에 따른 개개 성분의 이동도 차이는 크지 않았다. CLC/YSZ계면간의 결합은 계면성분간의 과다한 성분이동 없이 현 연구의 온도전체에 걸쳐 가능한 것으로 나타났다. CLC-G/CLC간의 SEM미세구조는 결합 면을 경계로 저온에서는 결정의 입자크기 차이를 보이다가 온도가 증가할수록 균일화되는 경향을 보였다.였다. 보였다.였다.

• Korean Chemical Engineering Research
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• 제44권6호
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• pp.614-622
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• 2006

질산망간수용액의 열분해에 의한 이산화망간 적용 $Ta/Ta_2O_5/MnO_2$ 커패시터의 특성 연구를 수행하였다. 질산망간수용액의 TG/DSC 분석을 통해 약 $230{\sim}250^{\circ}C$ 범위에서 단일상의 이산화망간이 생성되었다. 열분해 온도, 질산망간수용액의 농도, 열분해 회수를 이산화망간 고체 전해질 생성의 기초 변수로 선정하고 이에 따른 커패시터 특성을 평가하였다. 최적 조성을 기준으로 복사열분해 방식이 대류열분해 방식에 비하여 우수한 특성을 발휘하였다. 이는 복사열분해에 의해 상대적으로 구형의 작은 입자 상태의 이산화망간 입자들이 생성되고 이를 통해 미세 다공성 구조의 커패시터 소결체 내부에 균일하고 치밀한 이산화망간 고체전해질 층이 생성되는 것에서 기인하는 결과임을 확인하였다.

• 한국세라믹학회지
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• 제49권6호
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• pp.592-600
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• 2012

Conventional methods for preparing ceramic bodies, such as cold isostatic pressing, gypsum-mold slip casting, and filter pressing are not completely suitable for fabricating large and thick ceramic plates owing to disadvantages of these processes, such as the high cost of the equipment, the formation of density gradients, and differential shrinkage during drying. These problems can be avoided by employing a pressure-vacuum hybrid slip casting approach that considers not only by the compression of the aqueous slip in the casting room (pressure slip casting) but also the vacuum sucking of the dispersion medium (water) around the mold (vacuum slip casting). We prepared the alumina formed bodies by means of pressure-vacuum hybrid slip casting with stepwise pressure loading up to 0.5 MPa using a slip consisting of 40 vol% solid, 0.6 wt% APC, 1 wt% PEG, and 1 wt% PVA. After drying the green body at $30^{\circ}C$ and 80% RH, the green density of the alumina bodies was about 56% RD. The sintered density of an alumina plate created by means of sintering at $1650^{\circ}C$ for 4 h exceeded 99.8%.This method enabled us to fabricate a $110{\times}110{\times}20$ mm alumina plate without cracks and with a homogeneous density, thus demonstrating the possibility of extending the method to the fabrication of other ceramic products.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.48-48
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• 2007

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

• 한국재료학회지
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• 제9권6호
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• pp.630-634
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• 1999

$Al(OH)_3$와 비정질 $SiO_2$를 출발원료로 사용하여 반응소결을 통한 다공성 뮬라이트를 제조하였다. $Al(OH)_3$와 $SiO_2$의 몰비를 뮬라이트의 화학양론적 조성과 실리카와 얄루미나가 많은 조성으로 변화시키고, 각 조성에 $AlF_3$를 0, 1, 5, 10wt% 첨가하여 뮬라이트의 생성에 미치는 조성과 첨가제의 영향을 살펴보았다. 첨가한 $AlF_3$의 양이 많아질수록 낮은 온도에서 뮬라이트가 생성됨을 보였고, 첨가된 $AlF_3$의 양이 5wt%인 경우, 화학량론적 뮬라이트 조성에서 율라이트가 $1250^{\circ}C$에서부터 생성되기 시작하였으 며 $1300^{\circ}C$ 이상 열처리한 경우 충분히 발달한 침상형의 다공성 뮬라이트가 합성되었다. $AlF_3$의 양이 5wt% 이상 첨가한 경우 열 처리 온도의 영향은 크게 나타나지 않았으며, 소성체의 수축도 거의 일어냐지 않았다.