• 제목/요약/키워드: Single-junction

검색결과 308건 처리시간 0.027초

Intrinsic layer 두께 가변에 따른 단일접합 비정질 박막 태양전지의 효율 특성 변화 (The efficiency charateristics of intrinsic layer thickness dependence for amorphous silicon single junction solar cells)

  • 윤기찬;김영국;허종규;최형욱;이영석;이준신
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.80-82
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    • 2009
  • The dependence of the efficiency characteristics of hydrogenated amorphous silicon single junction solar cells on the various intrinsic layer thickness has been investigate in the glass/$SnO_2$:F/p,i,n a-Si:H/Al type of amorphous silicon solar cells by cluster PECVD system. The open circuit voltage, short circuit current, fill factor and conversion efficiency have been measured under AM 1.5 condition. The result of the cell performance was improved about 8.2% due to an increase in the short circuit current.

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Down-Conversion Effect Applied to GaAs p-i-n Single Junction Solar Cell

  • 박준서;김지훈;고형덕;이기용;김정혁;한일기
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.694-694
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    • 2013
  • With the growing need of more effective energy harvesting, solar energy has been sought as one of the prominent candidates among the eco-friendly methods. Although many types of solar cells have been developed, the electronic conversion efficiency is limited by the material's physical properties: solar cells can only harvest solar energy from limited range in solar energy spectrum. To overcome this physical limit, we approached by using the down conversion effect, transforming the high energy photons to low energy photons, to the range the designated solar cell can convert to electronic energy. In our study, we have fabricated GaAs single junction solar cells and applied CdSe quantum dots for down-conversion. We examine the effects of such application on the solar cell efficiancy, fill-factor, JSC, VOC, etc.

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불순물에 의한 CdTe단결정의 전기적 특성 (Electrical Properties of Single Crystal CdTe by Impurity)

  • 박창엽
    • 전기의세계
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    • 제20권2호
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    • pp.9-14
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    • 1971
  • N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

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고온 초전도 경사형 모서리 접합을 이용한 4단 쉬프트 레지스터의 동작 (Operation of a Single Flux Quantum 4-stage Shift Register Fabricated with High $T_c$ Ramp-edge Junction Technology)

  • 김준호;박종혁;김상협;정구락;강준희;성건용;한택상
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.83-86
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    • 2001
  • We have fabricated a single flux quantum 4-stage shift register with interface-controlled $Y_1$$Ba_2$$Cu_3$$O_{7-x}$(YBCO) Josephson junction. The YBCO Josephson junctions showed RSJ-like current-voltage(I-V) curves at temperatures 45~80K. We tested load and shift operation of shift register with binary data sequences “1000”, “1010”, “1011”, and “1111” at 58K. For all the binary data sequences, the shift register operated successfully. By operating the circuit with proper current pulses, we observed no errors during at least 12 hours operation for all the data sequences.s.

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단입계 ZnO 단결정 접합체의 바리스터 거동 (Varistor Behavior of ZnO Single Crystal Monolayer Junction)

  • 김영정;김영철;안승준;민준원
    • 한국세라믹학회지
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    • 제42권5호
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    • pp.366-370
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    • 2005
  • Single gram-boundary varistors were fabricated using hydrothermal and vapor phase grown ZnO single crystals and their voltage-current relation was studied. The single crystal bonded single junction varistor showed various voltage-current relationship and different breakdown voltage of 0.24-3V. The different types of non-linear current voltage behaviors was attributed to the variation of electrical conductivity in ZnO single crystals.

퍼지 논리를 사용한 교통망 제어기의 개발 (Development of A Traffic Network Controller using Fuzzy Logic)

  • 김종완;한병준
    • 한국정보처리학회논문지
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    • 제5권11호
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    • pp.2908-2914
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    • 1998
  • 본 논문은 교통량이 변하는 복수 교차로망의 신호등 제어에 적합한 지능형 신호 제어기를 제안한다. 교차로망이란 하나의 교차로가 사방으로 연결된 교차로이다. 기존의 교차로 제어방법들은 주로 단일 교차로를 대상으로 연구가 수행되었다. 하지만 단일 교차로 제어는 현실의 교통 상황과는 차이가 있다. 본 논문에서는 교통량과, 녹색 신호시 교차로로 진입하는 차량수와 적색 신호동안 대기하는 차량수를 퍼지 제어의 입력변수로 사용하여, 현재 녹색 현시의 확장시간을 조정하는 퍼지 교통망 제어기를 개발한다. 제안된 방법은 기존의 교차로 신호 주기 제어 방법들과 시뮬레이션을 수행하여 비교하였다. 실험결과는 제안된 퍼지 논리 제어기가 기존의 방법들에 비하여 차량당 지체시간과 논문에서 제안된 비용함수 면에서 우수함을 보여준다.

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고효율 적층형 태양전지를 위한 유무기 페로브스카이트 (Organic-Inorganic Perovskite for Highly Efficient Tandem Solar Cells)

  • 박익재;김동회
    • 세라미스트
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    • 제22권2호
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    • pp.146-169
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    • 2019
  • To overcome the theoretical efficiency of single-junction solar cells (> 30 %), tandem solar cells (or multi-junction solar cells) is considered as a strong nominee because of their excellent light utilization. Organic-inorganic halide perovskite has been regarded as a promising candidate material for next-generation tandem solar cell due to not only their excellent optoelectronic properties but also their bandgap-tune-ability and low-temperature process-possibility. As a result, they have been adopted either as a wide-bandgap top cell combined with narrow-bandgap silicon or CuInxGa(1-x)Se2 bottom cells or for all-perovskite tandem solar cells using narrow- and wide-bandgap perovskites. To successfully transition perovskite materials from for single junction to tandem, substantial efforts need to focus on fabricating the high quality wide- and narrow-bandgap perovskite materials and semi-transparent electrode/recombination layer. In this paper, we present an overview of the current research and our outlook regarding perovskite-based tandem solar technology. Several key challenges discussed are: 1) a wide-bandgap perovskite for top-cell in multi-junction tandem solar cells; 2) a narrow-bandgap perovskite for bottom-cell in all-perovskite tandem solar cells, and 3) suitable semi-transparent conducting layer for efficient electrode or recombination layer in tandem solar cells.

LaAl$O_3$와 MgO 기판 위에 형성한 $YBa_2$$Cu_3$$O_7$ 모서리 죠셉슨 접합의 열처리 효과 (The Formation of $YBa_2$$Cu_3$$O_7$ Step-edge Josephson Junction on LaAl$O_3$and MgO Single Crystal Substrates by Using Step-edge Annealing)

  • 황윤석;김진태;문선경;이순걸;박용기;박종철
    • Progress in Superconductivity
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    • 제2권2호
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    • pp.71-75
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    • 2001
  • The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

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Triple junction 태양전지의 a-SiGe middle cell에 관한 연구 (Study of hydrogenated a-SiGe cell for middle cell of Triple junction solar cell)

  • 박태진;백승조;김범준
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.83.1-83.1
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    • 2010
  • Hydrogenated a-SiGe middle cell for triple junction solar cell was investigated with various process parameters. a-SiGe I-layer was deposited at substrate temperature $245^{\circ}C$ and hydrogen content(R) was up to 26.7. Low optical bandgap(1.45eV) of a-SiGe cell was applied for middle cell although a-SiGe single cell efficiency with low Ge content was higher. And this cell was applied to the middle cell of a glass superstrate type a-Si/a-SiGe/uc-Si triple junction solar cell. The triple junction solar cell was resulted in the initial efficiency of about 9%, area $0.25cm^2$, under global AM 1.5 illumination.

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