• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.41 no.8
• /
• pp.79-85
• /
• 2004

In this paper, the RF-ID system for ubiquitous tagging applications has been designed, fabricated and analysed. The RF-ID System consists of passive RF-ID Tag and Reader. The passive RF-ID tag consists of rectifier using zero-bias schottky diode which converts RF power into DC power, ID chip, ASK modulator using bipolar transistor and slot loop antenna. We suggest an ASK undulation method using a bipolar transistor to compensate the disadvantage of the conventional PIN diode, which needs large current Also, the slot loop antenna with wider bandwidth than that of the conventional patch antenna is suggested The RF-ID reader consist of patch array antenna, Tx/Rx part and ASK demodulator. We have designed the RF-ID System using EM and circuit simulation tools. According to the measured results, The power level of modulation signal at 1 m from passive RF-ID Tag is -46.76 dBm and frequency of it is 57.2 KHz. The transmitting power of RF-ID reader was 500 mW

• Journal of IKEEE
• /
• v.14 no.4
• /
• pp.257-262
• /
• 2010

We design a CMOS front-end with wide variable gain and low power consumption for 5.25 GHz band. To obtain wide variable gain range, a p-type metal-oxide-semiconductor field-effect transistor (PMOS FET) in the low noise amplifier (LNA) section is connected in parallel. For a mixer, single balanced and folded structure is employed for low power consumption. Using this structure, the bias currents of the transconductance and switching stages in the mixer can be separated without using current bleeding path. The proposed front-end has a maximum gain of 33.2 dB with a variable gain range of 17 dB. The noise figure and third-order input intercept point (IIP3) are 4.8 dB and -8.5 dBm, respectively. For this operation, the proposed front-end consumes 7.1 mW at high gain mode, and 2.6 mW at low gain mode. The simulation results are performed using Cadence RF spectre with the Taiwan Semiconductor Manufacturing Company (TSMC) $0.18\;{\mu}m$ CMOS technology.)

• Journal of Industrial Technology
• /
• v.29 no.B
• /
• pp.139-144
• /
• 2009

A Doppler radar is a radar using the doppler effect of the returned echoes from targets to measure their radial velocity. To be more specific the microwave signal sent by the radar antenna's directional beam is reflected toward the radar and compared in frequency, up or down from the original signal, allowing for the direct and highly accurate measurement of target velocity component in the direction of the beam. In this paper, we designed the doppler radar composed of 10.5 GHz band DROs(Dielectric Resonator Oscillator), $90^{\circ}C$ branch line coupler, single balanced mixer and $4{\times}4$ array antenna of high gain, high directivity, for non-contact type hydrometer. Fabricated Doppler radar can detect slow moving objects.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.615-616
• /
• 2006

Nowadays, the need of multi-mode/multi-band transceiver is rapidly increasing, so we design a direct conversion RF front-end for multi-mode/multi-band receiver that support WCDMA/CDMA2000/WIBRO standard. It consists of variable gain reconfigurable LNA and single input double balanced Mixer and complementary differential LC Oscillator. The circuit is implemented in 0.18 um RF CMOS technology and is suitable for low-cost mode/multi-band.