• 한국ITS학회:학술대회논문집
• /
• v.2006 no.10
• /
• pp.312-315
• /
• 2006

• Journal of electromagnetic engineering and science
• /
• v.17 no.2
• /
• pp.65-70
• /
• 2017

The design and implementation aspects of a new single-balanced mixer for ultra-wideband (UWB) applications are presented in this study. The proposed mixer utilizes a miniaturized UWB ring coupler as a balun, consisting of a pair of in-phase and inverted-phase transitional structures. The well-balanced UWB performance of the ring coupler, aside from the optimized diode matching, results in improved conversion loss and inter-port isolations for a wide bandwidth. The size of the implemented single-balanced diode mixer is reduced to about 60% of the area of the conventional single-balanced ring diode mixer. The measured results of the proposed mixer exhibit an average conversion loss of 7.5 dB (minimum 6.7 dB) and a port-to-port isolation of greater than 18 dB over a UWB frequency range of 3.1-10.6 GHz. The measured results agree well with the simulated results.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.765-768
• /
• 2005

In this paper, high LO-RF isolation 94 GHz MMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The 94 GHz MMIC single-balanced mixer was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT(MHEMT) diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 189 GHz and the maximum oscillation frequency($f_{max}$) of 334 GHz. The designed MMIC single-balanced mixer was fabricated using 0.1 ${\mu}m$ MHEMT MMIC process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Journal of information and communication convergence engineering
• /
• v.1 no.3
• /
• pp.139-142
• /
• 2003

In this paper, we consider the factors that affect a conversion loss performance in designing a single balanced diode mixer integrated with IRF(Image Reject Filter), based on the embedded electrical wavelength placed between the IRF and mixer, diode matching and LO drive amplifier. To evaluate the conversion loss performance, we suggest two types of a single balanced mixer using 90 degree branch line coupler, microstrip line and schottky diode. One is only mixer and the other is integrated with IRF and LO drive amplifier. The measured results of a single balance diode mixer integrated IRF show the conversion loss of 8.5 dB and the flatness of 1 dB p-p from 21.2 GHz to 22.6 GHz with 10 dBm LO. The measured input PI dB and IIP3 are 7 dBm and 15 dBm respectively under the nominal LO power level of 10dBm. The LO/RF and LO/IF isolation are 22 dB and 50 dB, respectively.

• Journal of IKEEE
• /
• v.16 no.2
• /
• pp.127-130
• /
• 2012

In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.13 no.4
• /
• pp.685-694
• /
• 2018

In this paper, we designed and fabricated the frequency mixer, which is the core parts of high frequency head in Ku-band tracking radar. To overcome the problem of single-ended and single-balanced resistive structure, we designed the fine-line structure with balanced mixer, to generate IF signal without distortion in L-band, after receiving the RF signal of the Ku-band. The prototype mixer showed a Noise Figure Max of 6.823dB, Gain of 4.1598~4.676dB and Band Pass of 61MHz in 5 Ku-band samples frequency.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.15-20
• /
• 2000

We demonstrated a single balanced mixer of the combination of high-T. superconductor (HTS) and III-V GaAs beam lead Schottky diodes operating in the mini-cryogenic chamber. The HTS hybrid mixer was designed with a center frequency of 27.5 GHz and a bandwidth of 1 GHz, and consisted of a rat-race coupler circuit with beam-lead diodes attached to its balanced ports. The HTS hybrid mixer with 1 GHz RF bandwidths exhibits a conversion loss of 6 dB. A LO-to-RF isolation was greater than 40 dB in the range of operating frequencies. Since the HTS/III-V hybrid mixer devices have lower noise and conversion loss, this technique provide us with new capabilities that can be effectively utilized in the field of local-point distribution service (LMDS) systems.

• Journal of electromagnetic engineering and science
• /
• v.4 no.4
• /
• pp.143-149
• /
• 2004

This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.5
• /
• pp.1023-1028
• /
• 2012

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the Schottky diode of an GaAs p-HEMT process has been developed for the I/Q demodulator of non-contact near field microwave probing system. A single balanced mixer type is adopted to achieve simple structure of the I/Q demodulator. A quadrature hybrid coupler and a quarter wavelength transmission line for 180 degree hybrid are realized with lumped elements of MIM capacitor and spiral inductor to reduce the mixer chip size. According to the on-wafer measurement, this MMIC mixer covers RF and LO frequencies of 1650MHz to 2050MHz with flat conversion loss. The MMIC mixer with miniature size of $2.5mm{\times}1.7mm$ demonstrates conversion loss below 12dB for both variations of RF and LO frequencies, LO-to-IF isolation above 43dB and RF-to-IF isolation above 23dB, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.4
• /
• pp.248-252
• /
• 2001

A noble single-ended input, double-balanced mixer topology is proposed. The mixer incorporates the common-source amplifier input stage with inductive degeneration for impedance matching. The analysis based on simulations shows that the overall performance of the mixer is excellent and is adjustable by varying the input transistor size to give best characteristics for the given linearity specifications.