• 제목/요약/키워드: Single-balanced Mixer

검색결과 54건 처리시간 0.021초

Design of A Compact Single-Balanced Mixer for UWB Applications

  • Mohyuddin, Wahab;Kim, In Bok;Choi, Hyun Chul;Kim, Kang Wook
    • Journal of electromagnetic engineering and science
    • /
    • 제17권2호
    • /
    • pp.65-70
    • /
    • 2017
  • The design and implementation aspects of a new single-balanced mixer for ultra-wideband (UWB) applications are presented in this study. The proposed mixer utilizes a miniaturized UWB ring coupler as a balun, consisting of a pair of in-phase and inverted-phase transitional structures. The well-balanced UWB performance of the ring coupler, aside from the optimized diode matching, results in improved conversion loss and inter-port isolations for a wide bandwidth. The size of the implemented single-balanced diode mixer is reduced to about 60% of the area of the conventional single-balanced ring diode mixer. The measured results of the proposed mixer exhibit an average conversion loss of 7.5 dB (minimum 6.7 dB) and a port-to-port isolation of greater than 18 dB over a UWB frequency range of 3.1-10.6 GHz. The measured results agree well with the simulated results.

높은 LO-RF 격리 특성의 94 GHz MMIC Single-balanced Mixer (High LO-RF Isolation 94 GHz MMIC Single-balanced Mixer)

  • 안단;이복형;임병옥;김성찬;이상진;이문교;신동훈;박형무;박현창;김삼동;이진구
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2005년도 추계종합학술대회
    • /
    • pp.765-768
    • /
    • 2005
  • In this paper, high LO-RF isolation 94 GHz MMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The 94 GHz MMIC single-balanced mixer was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT(MHEMT) diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 189 GHz and the maximum oscillation frequency($f_{max}$) of 334 GHz. The designed MMIC single-balanced mixer was fabricated using 0.1 ${\mu}m$ MHEMT MMIC process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

  • PDF

A Performance Consideration on Conversion Loss in the Integrated Single Balanced Diode Mixer

  • Han, Sok-Kyun;Kim, Kab-Ki
    • Journal of information and communication convergence engineering
    • /
    • 제1권3호
    • /
    • pp.139-142
    • /
    • 2003
  • In this paper, we consider the factors that affect a conversion loss performance in designing a single balanced diode mixer integrated with IRF(Image Reject Filter), based on the embedded electrical wavelength placed between the IRF and mixer, diode matching and LO drive amplifier. To evaluate the conversion loss performance, we suggest two types of a single balanced mixer using 90 degree branch line coupler, microstrip line and schottky diode. One is only mixer and the other is integrated with IRF and LO drive amplifier. The measured results of a single balance diode mixer integrated IRF show the conversion loss of 8.5 dB and the flatness of 1 dB p-p from 21.2 GHz to 22.6 GHz with 10 dBm LO. The measured input PI dB and IIP3 are 7 dBm and 15 dBm respectively under the nominal LO power level of 10dBm. The LO/RF and LO/IF isolation are 22 dB and 50 dB, respectively.

Single Balanced Monolithic Diode Mixer using Marchand Balun for Millimeter-wave Applications

  • Ryu, Keun-Kwan;Kim, Sung-Chan
    • 전기전자학회논문지
    • /
    • 제16권2호
    • /
    • pp.127-130
    • /
    • 2012
  • In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.

Fin-Line 구조의 Ku대역 추적레이더 수신단용 평형 믹서 설계 (Fin-Line Balanced Mixer Design for Ku-band Tracking Radar Receiver)

  • 나재현;노돈석;김동길
    • 한국전자통신학회논문지
    • /
    • 제13권4호
    • /
    • pp.685-694
    • /
    • 2018
  • 본 논문에서는 Ku대역 추적레이더의 핵심부품인 고주파 헤드 내 주파수 믹서(혼합기)의 설계 및 제작 결과에 대해서 다룬다. 단일종단(Single-Ended) 및 단일평형(Single-Balanced) 믹서의 단점을 보완하기 위해서, Fine-Line 구조의 평형(Balanced) 믹서를 설계하여 낮은 변환손실 특성을 가지도록 하였으며, Ku대역 RF신호를 입력받아 L밴드 IF신호를 생성하도록 하였다. 제작된 믹서에 대해서 Ku밴드 5개 샘플주파수를 대상으로 실험한 결과, 최대 잡음지수(Noise Figure Max) 6.823dB, 이득(Gain) 4.159dB ~ 4.676dB, 통과대역(Band Pass) 61MHz의 값을 확인하였다.

Ka-band high-$T_c$ superconductor and III-V semiconductor hybrid balanced mixer

  • Kwak, M.H.;Suh, J.D.;Kang, Kwang-Yong;Han, S.K.
    • 한국초전도학회:학술대회논문집
    • /
    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
    • /
    • pp.15-20
    • /
    • 2000
  • We demonstrated a single balanced mixer of the combination of high-T. superconductor (HTS) and III-V GaAs beam lead Schottky diodes operating in the mini-cryogenic chamber. The HTS hybrid mixer was designed with a center frequency of 27.5 GHz and a bandwidth of 1 GHz, and consisted of a rat-race coupler circuit with beam-lead diodes attached to its balanced ports. The HTS hybrid mixer with 1 GHz RF bandwidths exhibits a conversion loss of 6 dB. A LO-to-RF isolation was greater than 40 dB in the range of operating frequencies. Since the HTS/III-V hybrid mixer devices have lower noise and conversion loss, this technique provide us with new capabilities that can be effectively utilized in the field of local-point distribution service (LMDS) systems.

  • PDF

Single-Balanced Low IF Resistive FET Mixer for the DBF Receiver

  • Ko Jee-Won;Min Kyeong-Sik
    • Journal of electromagnetic engineering and science
    • /
    • 제4권4호
    • /
    • pp.143-149
    • /
    • 2004
  • This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

비접촉 마이크로웨이브 프루브 시스템의 I/Q Demodulator를 위한 MMIC Mixer의 설계 (A Design of MMIC Mixer for I/Q Demodulator of Non-contact Near Field Microwave Probing System)

  • 류근관;김성찬
    • 한국정보통신학회논문지
    • /
    • 제16권5호
    • /
    • pp.1023-1028
    • /
    • 2012
  • 본 논문에서는 비접촉 마이크로웨이브 프루브 시스템의 I/Q demodulator를 위한 MMIC (Monolithic Microwave Integrated Circuit) mixer chip을 GaAs p-HEMT 공정의 Schottky 다이오드를 이용하여 설계 및 제작하였다. 프루브 시스템의 I/Q demodulator 구조를 단순화하기 위해 single balanced 구조의 mixer를 채택하였다. Single balanced mixer에서 $90^{\circ}$hybrid coupler와 ${\lambda}/4$ 전송선로를 이용하여 $180^{\circ}$hybrid를 설계하였으며 이를 MIM 커패시터와 spiral 인덕터를 이용하여 구현함으로써 mixer chip의 크기를 줄일 수 있었다. On-wafer 측정 결과, 본 논문의 MMIC mixer는 1650MHz ~ 2050MHz의 RF 및 LO 주파수 대역을 포함하고 있으며, 응용 주파수 대역 내에서 RF 및 LO의 변화에 대해 약 12dB 이하의 평탄한 변환손실(conversion loss) 특성을 나타내었다. 또한, MMIC mixer chip은 $2.5mm{\times}1.7mm$의 초소형 크기를 가지며 LO-IF 및 RF-IF의 격리도는 각각 43dB 및 23dB 이상의 특성을 나타내었다.

Adjustable-Performace, Single-Ended Input Double-Balanced Mixer

  • Choi, Jin-Yong;Lee, Kyung-Ho;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제1권4호
    • /
    • pp.248-252
    • /
    • 2001
  • A noble single-ended input, double-balanced mixer topology is proposed. The mixer incorporates the common-source amplifier input stage with inductive degeneration for impedance matching. The analysis based on simulations shows that the overall performance of the mixer is excellent and is adjustable by varying the input transistor size to give best characteristics for the given linearity specifications.

  • PDF