• Title/Summary/Keyword: Single layer ITO

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Properties of Polymer Light Emitting Diodes Using PFO : MEH-PPV Emission Layer and Hole Blocking Layer (PFO : MEH-PPV 발광층과 정공 차단층을 이용한 고분자 발광다이오드의 특성)

  • Lee, Hak-Min;Gong, Su-Cheol;Shin, Sang-Bae;Park, Hyung-Ho;Jeon, Hyeong-Tag;Chang, Ho-Jung
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.2
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    • pp.49-53
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    • 2008
  • The yellow base polymer light emitting diodes(PLEDs) with double emission and hole blocking layers were prepared to improve the light efficiency. ITO(indium tin oxide) and PEDOT : PSS[poly(3,4-ethylenedioxythiophene) : poly(styrene sulfolnate)] were used as cathode and hole transport materials. The PFO[poly(9,9-dioctylfluorene)] and MEH-PPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. TPBI[Tpbi1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene] was used as hole blocking layer. To investigate the optimization of device structure, we prepared four kinds of PLED devices with different structures such as single emission layer(PFO : MEH-PPV), two double emission layer(PFO/PFO : MEH-PPV, PFO : MEH-PPV/PFO) and double emission layer with hole blocking layer(PFO/PFO : MEH-PPV/TPBI). The electrical and optical properties of prepared devices were compared. The prepared PLED showed yellow emission color with CIE color coordinates of x = 0.48, y = 0.48 at the applied voltage of 14V. The maximum luminance and current density were found to be about 3920 cd/$m^2$ and 130 mA/$cm^2$ at 14V, respectively for the PLED device with the structure of ITO/PEDOT : PSS/PFO/PFO : MEH-PPV/TPBI/LiF/Al.

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Light Emitting Diodes Based on Polyaniline (폴리아닐린을 이용한 발광소자 연구)

  • Kim, Eun Ok;Park, Soo Beom;Heo, Seok;Lee, Sung Joo
    • Journal of the Korean Chemical Society
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    • v.45 no.2
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    • pp.156-161
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    • 2001
  • Various oxidation states of Polyaniline(PANI) were chemically synthesized, and characterized by FT-IR, UV-Vis, GPC, TG-DTA, Single layer light emitting diodes(LED) were perpared by spin coating of LEB-PANI solutions which have various oxidation states onto an ITO substrate and subsequent vacuum deposition of aluminum top electrode and then current-voltage characteristics. EL spectrum was investigated It was found that ${\pi}$-${\pi}$* transition were shifled to longer wavelength and molecular excition transition were decreased in the UV-Vis spectra and the intensity of EL and PL were increased as the contents of fully reduced form LEB increased. The turn-on voltage of ITO/LEB/AI structured LED was 5 V. It was found that the white light was emitted only from the phase with reduced epeat unit.

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Application of NiOx Anode for Bottom Emission Organic Light Emitting Diode

  • Kim, Young-Hwan;Kim, Jong-Yeon;Kim, Byoung-Yong;Han, Jeong-Min;Moon, Hyun-Chan;Park, Kwang-Bum;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.448-448
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    • 2007
  • OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

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Luminous Characteristics of Transparent Field Emitters Produced by Using Ultra-thin Films of Single Walled Carbon Nanotubes

  • Jang, Eun-Soo;Goak, Jeung-Choon;Lee, Han-Sung;Lee, Seung-Ho;Lee, Nae-Sung
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.31.1-31.1
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    • 2009
  • Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.

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Emission Characteristics of Blue Fluorescence Tandem OLED Using MoOx (MoOx를 사용한 청색 형광 Tandem OLED의 발광 특성)

  • Kwak, Tea-Ho;Ju, Sung-Hoo
    • Journal of the Korean institute of surface engineering
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    • v.47 no.3
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    • pp.104-108
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    • 2014
  • To improve emission efficiency of organic light emitting devices (OLEDs), we fabricated the tandem OLED of ITO / 2-TNATA / NPB / SH-1: 3 vol.% BD-2 / Bphen / Liq / Al / $MoO_x$ (X nm) / 2-TNATA / NPB / SH-1: 3 vol.% BD-2 / Bphen / Liq / Al structure. And emission properties of single OLED and tandem OLED with $MoO_x$ thickness as charge generation layer (CGL) were measured. The current emission efficiency and quantum efficiency of tandem OLED with $MoO_x$ of 3 nm thickness were improved compare with single OLED from 7.46 cd/A and 5.39% to 22.57 cd/A and 11.76%, respectively. In case of thicker or thinner than $MoO_x$ of 3~5 nm, the current emission efficiency and quantum efficiency were decreased, because balance of electron and hole in emission layer was not matching. The driving voltage was increased from 8 V of single OLED to 15 V of tandem OLED by thickness increase of OLED. As a result, it was possible to improve the emission efficiency of OLEDs by optimized $MoO_x$ thickness.

A Emission Property of Powder EL device at 60Hz (상용주파수(60Hz)에서 후막 EL소자의 발광특성)

  • 오주열;정병선;이종찬;박대희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.303-306
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    • 1998
  • Electroluminescence is occurred when phosphor is located in electric field. Object of this research show powder electroluminescent device (PELD) for high brightness compared with conventional PELD. Single layer of PELD structured as follow (ITO/phosphor + dielectric/silver paste). To investigate optical properties of PELDS, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in single layer of PELD was 7:3(phosphor: dielectric). At 200 V4OO Hz, high performance of PELD which had ratio of 7:3

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Electrical and Optical Properties of Organic Light Emitting Devices Using Blue Fluorescent and Orange Phosphorescent Materials (청색형광재료와 황색인광 재료를 이용한 OLEDs의 전기 및 광학적 특성)

  • Seo, Yu-Seok;Moon, Dae-Gyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.155-155
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    • 2010
  • We have investigated organic light-emitting devices by doping phosphorescent orange and fluorescent blue emitters into the separate layers of single host. The electroluminescence spectra and current efficiency were strongly dependent on the location of each doped layers. The luminance-voltage (L-V) characteristics of the device2 (ITO/Hole Transport Layer/Orange Phosphorescent emissive layer/Blue Fluorescent emissive layer/Electron Transport Layer/liF/Al) showed the maximum current efficiency of 19.5 cd/A.

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Continuous Roll-to-Roll(R2R) sputtering system for growing flexible and transparent conducting oxide electrode at room temperature

  • Park, Yong-Seok;Jeong, Jin-A;Park, Ho-Kyun;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1575-1577
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    • 2009
  • We have investigated the characteristics of transparent indium zinc oxide(IZO)/Ag/IZO multilayer electrode grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll sputtering system for use in flexible device are described. By the continuous R2R sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, we were able to fabricate an IZO-Ag-IZO multilayer electrode with a sheet resistance of 6.15 ${\Omega}$/square, optical transmittance of 87.4 %, and figure of merit value of 42.03 10-3 ${\Omega}$-1. In addition, the IZO-Ag-IZO multilayer electrode exhibited superior flexibility to the RTR sputter grown single ITO electrode, due to the existence a ductile Ag layer between the IZO layers. This indicates that the RTR sputtered IZO-Ag-IZO multilayer is a promising flexible electrode that can substitute for the conventional single ITO electrode grown by bath type sputtering for use in low cost flexible device, due to its low resistance, high transparency, superior flexibility and fast preparation by the R2R process.

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Fabrication of the Electroluminescence Devices with Al electrode deposited by DC sputtering (DC 스퍼터링 증착에 의한 AI 전극을 갖는 전계발광소자 제작)

  • 윤석범
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.5
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    • pp.376-382
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    • 2000
  • We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

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The Electro-optical Properties of Multilayer EL Devices with P3HT as Emitting layer (P3HT를 이용한 다층막 전계발광 소자의 전기-광학적 특성)

  • Kim, Dae-Jung;Kim, Ju-Seung;Kim, Jeong-Ho;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1018-1021
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    • 2003
  • We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

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