• 동력기계공학회지
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• 제5권4호
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• pp.11-17
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• 2001

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than $200{\sim}300{\mu}m$ has been realized, In this paper, we study some of the bonding processes of SCS(single crystal silicon) insulator wafer for the microaccelerometer. and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in micro structural engineering discipline for design of SCS insulator wafers. Successful temperature distribution analysis and design of the SCS insulator wafers based on the tunneling current concept using microaccelerometer depend on the knowledge about normal mechanical properties of the SCS and $SiO_2$ layer and their control through manufacturing processes.

• 전력전자학회논문지
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• 제5권2호
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• pp.184-191
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• 2000

기존의 2개의 컨버터를 병렬 운전하기 위해서는 2개의 변류기 (CT)가 필요하였으나, 본 논문에서는 1개의 변류기만으로도 2개의 컨버터를 병렬 운전 가능한 단일 전류센서 방식의 마스터-슬레이브 운전 방법을 제안하였다. 제안된 단일 전류센서 방식의 부하 전류 분배 성능을 확인하기 위하여, 2개의 컨버터를 설계, 제작하였고 기존방법 (예: 최대 전류법)과 부하 전류 분배 성능을 세 가지의 임의 조건하에서 시뮬레이션, 부하 실험을 통하여 비교하였다. 실험 결과 컨버터 2대를 병렬 운전하는 경우, 기존의 방법으로는 2개의 CT가 필요하였으나 제안한 단일 전류센서 방식을 이용한면 1개의 CT만으로도 부하 전류 분배가 잘 이루어짐을 확인할 수 있었다.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2000년도 춘계학술대회 논문집(Proceeding of the KOSME 2000 Spring Annual Meeting)
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process

• 한국생산제조학회지
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• 제9권5호
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• pp.105-111
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than 200~300${\mu}{\textrm}{m}$ has been realized. Over the past four or five years, numerical modeling of microsensors and microstructures has gradually been developed as a field of microelectromechanical system(MEMS) design process. In this paper, we study some of the micromachining processes of single crystal silicon(SCS) for the microaccelerometer, and their subsequent processes which might affect thermal and mechanical loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for component design of microaccelerometer. Temperature rise sufficiently low at the suspended beams. Instead, larger temperature gradient can be seen at the bottom of paddle part. The center of paddle part becomes about 5~2$0^{\circ}C$ higher than the corner of paddle and suspended beam edges.