• The Journal of the Convergence on Culture Technology
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• v.9 no.6
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• pp.855-859
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• 2023

Copper oxide (CuO) nanoparticles were successfully synthesized using a precursor in which industrial starch was impregnated with an aqueous solution of copper (II) nitrate trihydrate. The microstructure of the precursor impregnated with an aqueous solution of copper nitrate trihydrate was confirmed with a scanning electron microscope (SEM), and the particle size and the crystal structure of the copper oxide particles produced as the temperature of the heat treatment of the precursor increased was analyzed by X-ray diffraction (XRD) and the scanning electron microscope (SEM). As a result of the analysis, it was confirmed that the temperature at which the organic matter of the precursor is completely thermally decomposed is 450-490℃, and that the size and crystallinity of the copper oxide particles increased as the heat treatment temperature increased. The size of the copper oxide particles obtained through heat treatment at 500-800℃ during 1 hour was 100nm~2㎛. It was confirmed that the copper oxide crystalline phase is formed at a heat treatment temperature of 400℃, and only the copper oxide single phase existed up to 800℃. And it was also confirmed that the size of particles produced increased as the calcination temperature increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• Journal of the Korean Applied Science and Technology
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• v.32 no.2
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• pp.240-247
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• 2015

Zeolite A was prepared from coal fly ash upon NaOH fusion treatment, followed by hydrothermal treatment. The effects of treatment conditions such as NaOH/ash ratio, fusion temperature, the amount of sodium aluminate added, hydrothermal treatment temperature and time on the type and the crystallinity of zeolites were investigated. The optimal NaOH/ash weight ratio and fusion temperature to produce high crystalline zeolite A were 1.2 and $550^{\circ}C$, respectively. The dissolution of $Si^{4+}$ and $Al^{3+}$ from the fused fly ash was not affected by stirring time. The type of synthetic zeolites was found to be dependent on the amount of sodium aluminate added. The low amount of sodium aluminate favored zeolite X, while a single phase zeolite A was produced by increasing the amount sodium aluminate. Zeolite A was transformed into hydroxysodalite with increasing hydrothermal treatment time and temperature. A high crystalline zeolite A could be obtained by decreasing the temperature increasing time up to the reaction temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.85-89
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• 2009

Nano-crystalline hydroxyapatite (HAp) films were formed at the Ti surface by a single-step microarc oxidation (MAO), and HAp-zirconia composite (HZC) films were obtained by subsequent chemical vapor deposition (CVD) of zirconia onto the HAp. Through the CVD process, zero- and one-dimensional zirconia nanostructures having tetragonal crystallinity (t-ZrO2) were uniformly distributed and well incorporated into the HAp crystal matrix to form nanoscale composites. In particular, (t-$ZrO_2$) was synthesized at a very low temperature. The HZC films did not show secondary phases such as tricalcium phosphate (TCP) and tetracalcium phosphate (TTCP) at relatively high temperatures. The most likely mechanism for the formation of the t-$ZrO_2$ and the pure HAp at the low processing temperature was proposed to be the diffusion of $Ca^{2+}$ ions. The HZC films showed increasing micro-Vickers hardness values with increases in the t-$ZrO_2$ content. The morphological features and phase compositions of the HZC films showed strong dependence on the time and temperature of the CVD process. Furthermore, they showed enhanced cell proliferation compared to the $TiO_2$ and HAp films most likely due to the surface structure change.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.362-363
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• 2008

Well-defined o-$LiMnO_2$ cathode materials were synthesized using LiOH and $Mn_3O_4$ starting materials at $1050^{\circ}C$ in an argon flow by quenching method. The synthesized $LiMnO_2$ particles with crystalline phases were identified with X-ray diffraction (XRD, Dmax/1200, Rigaku). XRD results, demonstrated that the compound $LiMnO_2$ can be indexed to a single-phase material having the orthorhombic structure. In this paper, we analyzed the electrochemical performance of $LiMnO_2$/Li using solid polymer electrolyte and liquid electrolyte.

• Korean Chemical Engineering Research
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• v.56 no.2
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• pp.156-161
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• 2018

$TiO_2$ photocatalyst powders were prepared by chlorination method and sol-gel method. Specific surface area and crystalline (i.e., anatase and rutile) of the catalyst varied depending on manufacture conditions and method. TTIP-sol photocatalyst had higher methylene blue (MB) decomposition characteristics than photocatalyst from chlorination method and TBOT-sol. MB removal efficiency from aqueous solution with TTIP-sol photocatalyst was over 90%. Experimental results showed that the $TiO_2$ photocatalyst with a single anatase phase and a large specific surface area had high decomposition characteristics of organic materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.440-441
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• 2007

For this study, terbium-doped yttrium aluminum garnet (YAG:Tb) phosphor powders were prepared via the combustion process using the varous reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope(SEM), and photoluminescence (PL). Single-phase cubic YAG:Tb crystalline powder was obtained at $1000^{\circ}C$ by directly crystallizing it from amorphous materials, as determined by XRD techniques. The SEM image showed that the resulting YAG:Tb powders had uniform sizes and good homogeneity. The photoluminescence spectra of the YAG:Tb nanoparticles were investigated to determinethe energy level of electron transition related to luminescence processes. There were three peaks in the excited spectrum, and the major one was a broad band of around 274 nm. Also, the YAG:Tb nanoparticles showed two emission peaks in the range of 450~500 nm and 525~560 nm, respectively, and had maximum intensity at 545 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.69-69
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• 2010

The research is the structural and optical characteristics of the Cadmium Sulfide(CdS) film, nanowires and nanobelts grown on the $Al_2O_3$ substrate using the vapor phase epitaxy method. The field-emission scanning electron microscopy(FE-SEM) were used to identify the shape of the surface of the nanostructures and x-ray diffraction(XRD) and transmission electron microscopy (TEM) were used to evaluate the structural characterisitcs. As a result, the XRD was confirmed the CdS peak and the substrate peak and TEM showed single crystals with wurtzite hexagonal structure on the nanostructures. As for the optical characteristic of the nanostructures, photoluminescence(PL) and micro-raman spectrum were measured. The PL measurements confirmed the emission peak related bound exciton to neutral donor($D^0X$) peak and free exciton(FX) peak. The micro-raman spectrum showed that the peak of the nanostructures were similar to the pure crystalline CdS peak and each peak were overtone of LO phonon of the hexagonal CdS of the longitudinal optical(LO) phonon mode. Therefore, it is confirmed that the CdS nanostructures grown in this research have superior crystallinity.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.260-266
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• 2021

Synthesizing low-dimensional structures of oxide semiconductors is a promising approach to fabricate highly efficient gas sensors by means of possible enhancement in surface-to-volume ratios of their sensing materials. In this work, vertically aligned zinc oxide (ZnO) nanorods are successfully synthesized on a transparent glass substrate via seed-mediated hydrothermal synthesis method with the use of a ZnO nanoparticle seed layer, which is formed by thermally oxidizing a sputtered Zn metal film. Structural and optical characterization by x-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy reveals the successful preparation of the ZnO nanorods array of the single hexagonal wurtzite crystalline phase. From gas sensing measurements for the nitrogen dioxide (NO₂) gas, the vertically aligned ZnO nanorod array is observed to have a highly responsive sensitivity to NO₂ gas at relatively low concentrations and operating temperatures, especially showing a high maximum sensitivity to NO₂ at 250 ℃ and a low NO₂ detection limit of 5 ppm in dry air. These results along with a facile fabrication process demonstrate that the ZnO nanorods synthesized on a transparent glass substrate are very promising for low-cost and high-performance NO₂ gas sensors.