• Journal of the Korean Chemical Society
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• v.40 no.3
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• pp.167-172
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• 1996

For the preparation of single-crystalline GaN film, heteroepitaxial growth on a sapphire substrate was carried out by halide vapor phase epitaxy(HVPE) method. The resulting GaN films showed n-type conductivity. The insulator type GaN film was made by doping with Zn(acceptor dopant), which showed emission peaks around 2.64 and 2.43 eV. The result of this study indicates that GaN can be obtained in an epitaxial structure of MIS(metal-insulator-semiconductor) junction. The observed data are regarded as fundamental in developing GaN epitaxial films for light emitting devices of hetero-structure type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.922-925
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• 2012

Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.755-761
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• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.83-88
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• 2019

LiBaPO₄:Eu²⁺ phosphors with stoichiometric and nonstoichiometric compositions were prepared using a solid state reaction followed by heat treatment in reduced atmosphere, and the crystal structures and photoluminescence(PL) properties of the powders were investigated by x-ray powder diffraction and luminescence spectrometer. At 900℃, the Ba₃(PO₄)₂ phase as the intermediate phase was observed with the LiBaPO₄ phase as the main crystalline phase. Samples with a low europium concentration at 1,000℃ belonged to the trigonal structure, whereas samples with Eu²⁺ content more than 4 mol% showed monoclinic structure. In the nonstoichiometric compositions of 4 mol% Eu²⁺ and above, a single phase of Eu²⁺-doped LiBaPO₄, showing bluish green emission, was formed.

• Applied Chemistry for Engineering
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• v.7 no.1
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• pp.129-135
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• 1996

The entrapping capacity of the single hydrocarbons and the entrapping equilibrium data for binary mixtures of the $C_6$ to $C_9$ hydrocarbons on the activated thiourea have been investigated. The entrapping capacity of single component varied irregularly with molecular size and was independent of temperature. In the liquid phase entrapping from binary system, the lower molecular weight hydrocarbon was entrappe preferentially. In the liquid phase entrapping from trimethylbenzene isomer and ethyltoluene isomer, selectivity was found to be related to the relative position of methyl groups in the molecules and hence the electronic configuration. Pseudocumene of a purity of 99.5wt% may be obtained from $C_9$ aromatic raffinate found in naphtha cracking center. Activated thiourea was more efficient than distillation, extractive crystallization and adductive crystallization in terms of separation factor.

• Proceedings of the SCSK Conference
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• 2003.09b
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• pp.330-342
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• 2003

The formation of emulsions and micelles in water/ceramide PC104/CholE $O_{20}$/C$_{16}$E $O_{20}$ and water/ceramide PC104/CholE $O_{20}$ mixtures was investigated through the phase behavior studies. The phase diagrams showed the existence of micelle and emulsion regions in both systems. The mixed surfactant system (CholE $O_{20}$/C$_{16}$E $O_{20}$) showed the wider micellar and emulsion regions than the single surfactant system (CholE $O_{20}$). From FT-IR measurements, it was found that the polyoxyethylene (POE) groups of surfactants formed the hydrogen bonds with amido carbonyl group in ceramide PC104. This result indicated that the hydrophilic part (EO) of surfactants could stabilize the lamellar structure and emulsion of ceramide PC104. The mixed surfactant system (CholE $O_{20}$/C$_{16}$E $O_{20}$) resulted in the smaller emulsion droplet size due to the effect of curvature at the interface, thus further increasing emulsion stability. With the penetration of $C_{16}$E $O_{20}$into the interfacial layer of surfactants in emulsion, the curvature of the interface might be altered for the formation of smaller emulsion droplets. The mixed surfactant system could incorporate up to 4 wt. % of ceramide PC104 into emulsion more than single surfactant system.ystem.m.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.232-237
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• 2008

As the single chamber SOFC(SC-SOFC) showed higher prospect on reducing the operation temperature as well as offering higher design flexibility of SOFCs, lots of concerns have been given to investigate the catalytic activity of perovskite-type oxide in mixed fuel and oxidant conditions. Hence we thoroughly investigated the catalytic property of various perovskite-type oxides such as $La_{0.8}Sr_{0.2}MnO_3(LSM),\;La_{0.6}Sr_{0.4}CoO_3(LSC),\;La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3(LSCF),\;Sm_{0.5}Sr_{0.5}CoO_3(SSC),\;and\;Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}(BSCF)$ under the partial oxidation condition of methane which used to be given for SC-SOFC operation. In this study, powder form of each perovskite oxides whose surface areas were controlled to be equal, were investigated as functions of methane to oxygen ratios and reactor temperature. XRD, BET and SEM were employed to characterize the crystalline phase, surface area and microstructure of prepared powders before and after the catalytic oxidation. According to the gas phase analysis with flow-through type reactor and gas chromatography system, LSC, SSC, and LSCF showed higher catalytic activity at fairly lower temperature around $400^{\circ}C{\sim}450^{\circ}C$ whereas LSM and BSCF could be activated at much higher temperature above $600^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.524-527
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• 2007

[ $Bi_2Sr_2Ca_{n-1}Cu_nO_x$ ](n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about % K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $ CaCuO_2$ was observed in all of the obtained films.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.141-149
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• 2017

The influence of the co-additive concentration (0 - 45 wt% with an interval of 5 wt%) of MgO-$TiO_2$ on the phase formation, microstructure and fracture toughness of MgO-$TiO_2$-reinforced dental porcelain nanocomposites derived from a one-step sintering technique were examined using a combination of X-ray diffraction, scanning electron microscopy and Vickers indentation. It was found that MgO-$TiO_2$-reinforced dental porcelain nanocomposites exhibited significantly higher fracture toughness values than those observed in single-additive (MgO or $TiO_2$)-reinforced dental porcelain composites at any given sintering temperature. The amount of MgO-$TiO_2$ as a co-additive was found to be one of the key factors controlling the phase formation, microstructure and fracture toughness of these nanocomposites. It is likely that 30 wt% of MgO-$TiO_2$ as a co-additive is the optimal amount for $MgTi_2O_5$ and $Mg_2SiO_4$ crystalline phase formation to obtain the maximum relative density (96.80%) and fracture toughness ($2.60{\pm}0.07MPa{\cdot}m^{1/2}$) at a sintering temperature of $1000^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1115-1121
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• 2007

[ $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$ ](n=0,1,2) thin fans have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.