• 전자공학회논문지CI
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• 제42권5호
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• pp.31-40
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• 2005

본 연구에서는 웨이퍼의 식각, 세정, 연마 공정에 사용되는 매엽식 세정장비의 동작순서의 시뮬레이션과 단위 시간당 처리량 측정 방법에 대해 연구한다. 유한상태기계를 바탕으로 스케쥴링 알고리즘에 따른 로봇의 상태를 정의하여 시뮬레이션 모델을 구축하였으며, 이에 따른 시뮬레이션 수행을 통해 세정장비의 시간당 처리량을 측정하였다. 본 연구에서 제시한 시뮬레이션 기법을 통해 레시피와 로봇의 동작속도에 따라 세정장비의 단위시간당 처리량을 측정하고, 처리량을 극대화 할 수 있는 레시피와 로봇의 동작순서를 찾아낼 수 있다.

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• 한국정밀공학회지
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• 제30권11호
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• pp.1193-1201
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• 2013

Improved far field type(improved type) megasonic applicable to the cleaning equipment of single wafer processing type has been developed. In this study, to improve the uniformity of acoustic pressure distribution(APD), we utilize far field with relatively uniform APD, piezoelectric ceramic with a triangle hole in its center to prevent standing wave resulted from radial mode, and reflected wave from the wall of waveguide. On the basis of these methods, two analysis models of improved type were designed to which piezoelectric ceramic of different shape of electrode attached, and APD were analyzed by means of finite element method, and then one of them was selected by analysis results, finally, the selected model was fabricated. Test results show that the fabricated is better in the uniformity of APD than the imported and the conventional, also the fabricated shows high particle removal efficiency of 92.3% using DI water alone as a cleaning solution.

• 한국재료학회지
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• 제4권5호
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• pp.510-515
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• 1994

플라즈마 화학 증착법으로 (100)p-type Si wafer위에 $Y_2O_3$-Stabilzed $ZrO_2$박막을 증착하였다. 반응 기체로는 zirconium triflouracethylacetonate[Zr(tfacac) $[Zr(tfacac)_4]$, tri(2.2.6.6 tetramethy1-3, 5-heptanate) yttrium $[Y(DPM)_3]$과 oxygen gas를 사용하였다. X-ray diffraction(XRD)과 fourier Particle induced x-ray emission(PIXE)을 통하여 $Y(DPM)_3$ bubbling temperature가 $160^{\circ}C, 165^{\circ}C, 170^{\circ}C$일때 $Y_2O_3$함량이 12.1mo1%, 20.4mol%, 31.6mol%임을 알 수 있었다. C-V측정에서 $Y(DPM)_3$ bubbling temperature가 증가함에 따라 flat band voltage가 더욱더 음의 방향으로 이동하였다.

• 대한기계학회논문집A
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• 제32권3호
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.