• Journal of Powder Materials
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• v.30 no.4
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• pp.346-355
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• 2023

Epoxy-based composites find extensive application in electronic packaging due to their excellent processability and insulation properties. However, conventional epoxy-based polymers exhibit limitations in terms of thermal properties and insulation performance. In this study, we develop epoxy-based siloxane/silica composites that enhance the thermal, mechanical, and insulating properties of epoxy resins. This is achieved by employing a sol-gel-synthesized siloxane hybrid and spherical fused silica particles. Herein, we fabricate two types of epoxy-based siloxane/silica composites with different siloxane molecular structures (branched and linear siloxane networks) and investigate the changes in their properties for different compositions (with or without silica particles) and siloxane structures. The presence of a branched siloxane structure results in hardness and low insulating properties, while a linear siloxane structure yields softness and highly insulating properties. Both types of epoxy-based siloxane/silica composites exhibit high thermal stability and low thermal expansion. These properties are considerably improved by incorporating silica particles. We expect that our developed epoxy-based composites to hold significant potential as advanced electronic packaging materials, offering high-performance and robustness.

• Polymer(Korea)
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• v.33 no.6
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• pp.569-574
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• 2009

Organic- inorganic hybrid waterborne polyurethane (PUD) is synthesized by using hybrid polyol consist of carbonate (PCD), ester (PCL), and siloxane (PDSBP) in order to enhance anti-scratch property of PUD film. The diameter of graft type PUD emulsion is bigger than that of linear type PUD due to the graft structure of hydrophobic siloxane chain. The glass transition temperature of linear type PUD increase and the decomposition temperature of linear type PUD decrease with the content of PCD polyol. While, the decomposition temperature of graft type PUD almost same with increasing PDSBP content. The anti-scratch property and pencil hardness of graft type PUD improves as adding PDSBP polyol in the hybrid polyol system. When 9 wt% of PDSBP polyol is mixed, PUD films shows excellent anti-scratch property (~3.3 N), and pencil hardness (> 9 H).

• Proceedings of the Membrane Society of Korea Conference
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• 2001.11a
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• pp.64-66
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• 2001

• Rapid Communication in Photoscience
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• v.4 no.1
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• pp.16-18
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• 2015

Luminescence properties of anthracene chromophores were investigated. Anthracene chromophores were incorporated in cyclosiloxane-based hybrid polymers through one-pot hydrosilylation reaction. Using four-armed cyclosiloxanes, divinylterminated siloxane monomers, and 9-vinylanthracenes, anthracene-labeled hybrid polymers were prepared. Free-standing hybrid polymer films were prepared successfully by doctor-blade method and thermal treatment. The polymer films exhibit strong blue fluorescence from anthracene and its fluorescence lifetime was not influenced by the temperature, indicating that the movement of anthracene chromophores was restrained in cyclosiloxane-based hybrid polymer films.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.230-234
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• 2011

In this work, the primary material for a single layered hardmask which can afford a spin-on process was prepared by the minture of organic and inorganic sources. The preparation of hybrid polymer was attempted by esterification from silanol terminated siloxane compounds and acetonide-2,2-bis(methoxy)propionic acid. The optical, thermal and morphological properties of the test hardmask film was examined in terms of cross-linking agent and additives. In addition, the etch rate of hardmask film and photo resist layer were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful for hardmask film to form the nano-patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.158-158
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• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.155-155
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• 1999

반도체 소자의 초고집적화와 고속화에 따라 최소 선폭이 급격히 줄어듬에 따라 현재 사용되고 있는 다층금속배선의 층간절연막 0.18$\mu\textrm{m}$ 급 이상의 소자에 적용할 경우 기생정전용량이 증가하여 신호의 지연 및 금속배선간에 상호간섭현상으로 반도체 소자의 동작에 심각한 문제가 대두되고 있다. 이러한 물제를 해결하기 위하여 nonoporous silica, fluorinated amorphous carbon, polyimides, poly(arylene)ether, parylene, AF4, poly(tetrafluoroethylene), divinyl siloxane bisbenzocyclobutene, Silk, 그리고 유무기 hybrid nanofoam 등이 저유전물질로 각광을 받고 있으며, 여기에 대한 연구가 우리나라를 비롯하여 미국, 일본 등에서 많은 연구가 이루어지고 있다. 따라서 본 연구에서는 2003년에 개발될 0.13$\mu\textrm{m}$급 이상의 차세대 반도체 소자에 적용될 수 있는 저유전물질 개발현황과 이들 물질 중 4GDRAM 급이상의 소자에 적용가능성이 가장 높은 유무기 hybrid nanofoam, a-C:F와 C:F-SiO2 박막에 대한 특성에 대하여 소개하고자 한다.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1366-1370
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• 2001

Thin films of the SiO2-TiO2-PDMS composite material have been prepared by the sol-gel dip coating method. Acid catalyzed solutions of tetraethoxy silane (TEOS) and polydimethyl siloxane (PDMS) mixed with titanium isopropoxide Ti(OiPr) were used as precursors. The optical and structural properties of the organically modified 70SiO2-30TiO2 composite films have been investigated with Fourier Transform Infrared Spectroscopy (FT-IR), UV-Visible Spectroscopy (UV-Vis), Differential Thermal Analysis (DTA) and prism coupling technique. The films coated on the soda-lime-silicate glass exhibit 450-750 nm thickness, 1.56-1.68 refractive index and 88-94% transmittance depending on the experimental parameters such as amount of PDMS, thermal treatment and heating rate. The optical loss of prepared composite film was measured to be about 0.34 dB/cm.

• Journal of Conservation Science
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• v.36 no.5
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• pp.339-350
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• 2020

This study attempted to apply a hybrid technology that integrated mineral-based fillers and water-repellent agents to control the efflorescence that results from the use of inorganic binders, for the conservation treatment (surface finishing) of cultural heritage materials made up of stone. Herein, different types of mixing ratios of a filler (silica fume 3.4%) and a water repellent (silane-siloxane 1%) were selected for fabricating the inorganic binder, and it was determined that the ratio selected by weight is effective in controlling efflorescence substances. In addition, it was identified that the inorganic binder with the mixing ratio resulted in a higher compressive strength than the standard (20MPa), and the water permeability resistance was high with low water absorption. The result of ion elution from the bilder showed that a smaller number of ions was observed to affect the efflorescence (directly and indirectly) as compared to that of the control group, which was considered to be relatively stable.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.