• Current Optics and Photonics
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• 제3권5호
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• pp.438-444
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• 2019

In this theoretical study, a line-defect photonic-crystal waveguide hosted in an annular photonic crystal was demonstrated to provide high-performance slow light with a wide band, low group-velocity dispersion, and a large normalized delay-bandwidth product. Combined with structural-parameter optimization and selective optofluid injection, the normalized delay-bandwidth product could be enhanced to a large value of 0.502 with a wide bandwidth of 58.4 nm in the optical-communication window, for a silicon-on-insulator structure. In addition, the group-velocity dispersion is on the order of $10^5$ ($ps^2/km$) in the slow-light region, which could be neglected while keeping the signal transmission unchanged.

• 센서학회지
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• 제9권2호
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• pp.113-119
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• 2000

정류수 내 수소 가스를 감지할 수 있는 Pd 박막을 가진 Pd/Pt 게이트 MISFET 수소센서를 제조하였다. 감지게이트 MISFET와 기준 게이트 MISFET의 차동형 센서로 제작하여 MOSFET 고유의 드리프트를 최소화하였다. 수소유입으로 인한 드리프트는 $Si_3N_4/SiO_2$의 이중 게이트 절연막으로 줄였고, 수소에 의한 Pd의 격자 팽창에 의해 생기는 블리스터는 Pt을 넣어서 제거하였다. Pd 박막을 수소 여과기로 사용한 Pd/Pt 게이트 MISFET 센서로 측정한 결과 $0{\sim}500\;ppm$ 사이에서 선형적인 출력 특성을 얻을 수 있었다. 30 일간 $50^{\circ}C$의 정류수 속에서 장기안정도를 측정하였다. 전체적으로 감지 FET의 게이트 전압은 35 mV 상승하였고, 기준 FET는 48 mV 상승하여 안정한 특성을 나타내었다.

• 센서학회지
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• 제30권3호
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• pp.131-138
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• 2021

The optimization of the specifications of vertical silicon on insulator (SOI) slot optical waveguides suitable for integrated-optical biochemical sensors was performed through computational analysis of the confinement factor of the guided mode distributed in the slot in addition to analytical examination of the TE mode. The optimized specifications were confirmed based on sensitivity in terms of the change in the refractive index of the biochemical analyte. When the slot width, rail width, and height were set to 120 nm, 200 nm, and 320 nm, respectively, the confinement factor was evaluated to be about 56% and the sensitivity was at least 0.9 [RIU/nm].

• Smart Structures and Systems
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• 제6권3호
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• pp.225-238
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• 2010

We report on the development of a new technology for the fabrication of Micro-Electro-Mechanical-System (MEMS) strain sensors to realize a novel type of crackmeter for health monitoring of ageing civil infrastructures. The fabrication of micromachined silicon MEMS sensors based on a Silicon On Insulator (SOI) technology, designed according to a Double Ended Tuning Fork (DETF) geometry is presented, using a novel process which includes a gap narrowing procedure suitable to fabricate sensors with low motional resistance. In order to employ these sensors for crack monitoring, techniques suited for bonding the MEMS sensors on a steel surface ensuring good strain transfer from steel to silicon and a packaging technique for the bonded sensors are proposed, conceived for realizing a low-power crackmeter for ageing infrastructure monitoring. Moreover, the design of a possible crackmeter geometry suited for detection of crack contraction and expansion with a resolution of $10{\mu}m$ and very low power consumption requirements (potentially suitable for wireless operation) is presented. In these sensors, the small crackmeter range for the first field use is related to long-term observation on existing cracks in underground tunnel test sections.

• 센서학회지
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• 제31권5호
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• pp.353-359
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• 2022

This study investigated via computational analysis the application utility of series-cascaded ring resonators based on silicon-on-insulator (SOI) slot optical waveguides in integrated optical biochemical sensors. The radii of the two rings in the series-cascaded ring resonators were 59.4 ㎛ and 77.6 ㎛ respectively, and the coupling distance was 0.5 ㎛. The series-cascaded ring resonators were computationally analyzed using FIMMProp and PICWave numerical software. The free spectral range (FSR), full width at half maximum (FWHM), sensitivity, and quality-factor (Q-factor) of the series-cascaded ring resonators were 12.2 nm, 0.134 nm, 4100 nm/RIU, and 11580, respectively, and the measurement range was calculated to be slightly smaller than 3×10^-3 RIU. Although the measurement range was smaller than that of the single ring resonator, upon considering other characteristic parameters, the series-cascaded ring resonators are found to be more effective as integrated sensors than single ring resonators.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.102-109
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• 2007

We propose and experimentally demonstrate a ring resonator with sharp U-turns fabricated on a silicon-on-insulator (SOI) substrate; the resonator was designed as a key part of an optical, dynamic data storage device. We discuss the optical properties of the fabricated ring resonator from the viewpoint of equi-frequency-contour behavior in a dispersion space. We successfully characterize its optical characteristics on the basis of photonic crystal physics. It is suggested that the photonic ring resonator will be applicable to optical, dynamic memory devices for optical communication systems.

• 센서학회지
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• 제3권1호
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• pp.12-18
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• 1994

본 연구에서는, calorimetric 형 흐름센서 소자를 미세가공된 실리콘 구조상에 제작하고 그 특성을 평가하였다. 기체의 흐름을 통한 냉각효과 및 가열효과를 가열저항을 중심으로 양측에 배열된 두개의 온도센서로 측정하였으며 절연박막 다이아프램을 기판으로 사용하여 열적절연효과를 향상시켰다. 제작된 흐름센서는 $0{\sim}0.25grs/min$의 질소가스의 흐름 범위 내에서, 10V의 브릿지 인가전압에 대해 $0{\sim}378.4mV$의 출력전압을 발생하였으며, 센서가 동작 영역에 이르는 시간은 10초 내외로 나타났다.

• Journal of Electrical Engineering and Technology
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• 제5권2호
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• pp.337-341
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• 2010

In this paper, an extremely low voltage operated micro corner cube retroreflector (CCR) was fabricated for free-space optical communication applications by using bulk silicon micromachining technologies. The CCR was comprised of an orthogonal vertical mirror and a horizontal actuated mirror. For low voltage operation, the horizontal actuated mirror was designed with two PZT cantilever actuators, torsional bars, hinges, and a mirror plate with a size of $400{\mu}m{\times}400{\mu}m$. In particular, the torsional bars and hinges were carefully simulated and designed to secure the flatness of the mirror plate by using a finite element method (FEM) simulator. The measured tilting angle was approximately $2^{\circ}$ at the applied voltage of 5 V. An orthogonal vertical mirror with an extremely smooth surface texture was fabricated using KOH wet etching and a double-SOI (silicon-on-insulator) wafer with a (110) silicon wafer. The fabricated orthogonal vertical mirror was comprised of four pairs of two mutually orthogonal flat mirrors with $400{\mu}m4 (length) $\times400{\mu}m$ (height) $\times30{\mu}m$ (thickness). The cross angles and surface roughness of the orthogonal vertical mirror were orthogonal, almost $90^{\circ}$ and 3.523 nm rms, respectively. The proposed CCR was completed by combining the orthogonal vertical and horizontal actuated mirrors. Data transmission and modulation at a frequency of 10 Hz was successfully demonstrated using the fabricated CCR at a distance of approximately 50 cm.