• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1049-1055
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• 2007

Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.

• 한국진공학회지
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• 제6권3호
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• pp.242-248
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• 1997

기존의 다공질 실리콘 제작 방법인 chemical etching 방법을 병행하면서 새로운 제 작 방법으로서 dry etching 기술을 적용하여 다공질 실리콘을 제작하였다. 또한, 비교를 위 해 E-beam lithography 기술로 실리콘 구조물을 제작하였는데 이 경우 기술상 문제로 약 0.3$\mu\textrm{m}$의 직경을 가진 구조물이 최소의 크기였다. 따라서 새로운 방법으로 4인치 wafer위에 mask 역할을 해주는 다이아몬드 분말을 spin coater로 입힌 후 Reactive Ion Etching(RIE) 방법으로 미세구조의 다공질 실리콘을 제작하였다. 다양한 조건으로 제작된 sample들의 morphology를 SEM과 AFM 등을 이용하여 분석하였고 이 morphology에 대응하는 PL스펙 트럼을 측정하였다. 그 결과, 다이아몬드 분말을 이용한 dry etching방법으로 제작된 다공질 실리콘의 PL peak의 위치가 chemical etching 방법의 다공질 실리콘의 PL peak 위치인 760nm에 비해 높은 에너지인 590nm로 나타났다.

• 한국전산구조공학회논문집
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• 제32권5호
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• pp.297-304
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• 2019

본 논문에서는 접착영역 모델을 이용하여 2상 리튬이온 충전 시 실리콘 음극 전극의 균열진전 해석을 수행하였다. 리튬화 실리콘은 결정질 실리콘에 비해 부피가 약 3배 이상 크므로 리튬이온 충전 시 외각의 리튬화 실리콘에 매우 큰 압축력이 작용하여 압축항복이 발생한다. 리튬이온 충전 시 외각의 리튬화 실리콘은 압축항복 후에 내부의 결정질 실리콘이 리튬화 실리콘으로 상 변이하면서 발생하는 부피 팽창으로 인해 인장력이 작용한다. 이러한 인장력으로 인해 발생하는 균열진전을 접착영역 모델을 이용하여 모사하였다. 사용한 접착영역 모델은 PPR 포텐셜 기반 접착영역 모델로 하나의 포텐셜을 사용하여 복합모드에 대해서도 에너지 소산에 일관성을 지니고 있다. 유한요소 수치해석 모델로 2상 리튬이온 충전 시 모서리 균열진전을 모사한 결과가 실제 실험결과와 일치함을 확인하였고, 균열 팁에서의 최대 인장응력의 각도를 분석하여 실제 실험처럼 균열진전 방향이 회전할 것을 예측할 수 있었다.

• 융합정보논문지
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• 제9권5호
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• pp.117-124
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• 2019

본 논문에서는 AMOLED 디스플레이 구동회로로 사용되는 박막트랜지스터의 구성요소 중에서 반도제 물질 제조의 최근 동향에 대해 논한다. 트랜지스터에 적용을 위해 특성이 좋은 반도체 막을 얻는 방법으로 비정질 실리콘을 다결정 실리콘으로 변화시켜야 하는데 레이저와 열처리 방법이 있으며, 레이저를 이용한 기술에는 SLS(Sequential Lateral Solidification), ELA(Excimer Laser Annealing), TDX(Thin-beam Directional Crystallization), 열처리 기술에는 SPC(Solid Phase Crystallization), SGS(Super Grain Silicon), MIC(Metal Induced Crystallization), FALC(Field Aided Lateral Crystallization)가 대표적이며, 이들에 대해 상세히 설명한다. 본 연구실에서 연구중인 레이저 결정화 기술의 대형 AMOLED 디스플레이 제작을 위한 연구 내용도 다룬다.

• 대한금속재료학회지
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• 제49권4호
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• 한국재료학회지
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• 제33권12호
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• pp.530-536
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• 2023

The theoretical capacity of silicon-based anode materials is more than 10 times higher than the capacity of graphite, so silicon can be used as an alternative to graphite anode materials. However, silicon has a much higher contraction and expansion rate due to lithiation of the anode material during the charge and discharge processes, compared to graphite anode materials, resulting in the pulverization of silicon particles during repeated charge and discharge. To compensate for the above issues, there is a growing interest in SiO_x materials with a silica or carbon coating to minimize the expansion of the silicon. In this study, spherical silica (SiO₂) was synthesized using TEOS as a starting material for the fabrication of such SiO_x through heating in a reduction atmosphere. SiO_x powder was produced by adding PVA as a carbon source and inducing the reduction of silica by the carbothermal reduction method. The ratio of TEOS to distilled water, the stirring time, and the amount of PVA added were adjusted to induce size and morphology, resulting in uniform nanosized spherical silica particles. For the reduction of the spherical monodisperse silica particles, a nitrogen gas atmosphere mixed with 5 % hydrogen was applied, and oxygen atoms in the silica were selectively removed by the carbothermal reduction method. The produced SiO_x powder was characterized by FE-SEM to examine the morphology and size changes of the particles, and XPS and FT-IR were used to examine the x value (O/Si ratio) of the synthesized SiO_x.

• Bulletin of the Korean Chemical Society
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• 제24권6호
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• pp.691-694
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• 2003

We report a quantum wavepacket study on the characteristic bimodal translational energy distribution of photostimulated desorbed Xe from an oxidized silicon (001) surface observed by Watanabe and Matsumoto, Faraday Discuss. 117 (2000) 203. We have simulated the theoretical translational energy distributions based on wavepacket calculations with a sudden transition and averaging model to reproduce the experiment. We discuss the desorption mechanism and suggest a very strong position dependence of the deexcitation processes for Xe/oxidized Si(001).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1705-1708
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• 2006

Nanocrystalline silicon (nc-Si) based TFTs were developed using a conventional PECVD production system. Devices exhibit very interesting characteristics, in particular when using a bi-layer structure which reduces leakage current and improves subthreshold area. Good stability and low leakage current make these devices suitable for the fabrication of low-cost and high performance AMOLED displays.

• 전자공학회논문지A
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• 제31A권4호
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• pp.70-76
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• 1994

A humidity sensing device based on a new humidity sensing principle is designed and fabricated in this study. The silicon thermopile is consisted of 25 couples of p-type diffused layer/Al strips. The internal resistance and the Seebeck coefficient are 300kl and 537$\mu$V/K, respectively Fabricated sensors showed linear response characteristics proportional to relative humidity changes with a sensitivity of 9$\mu$V/%RH in the range from 20% to 90%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.458-460
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• 1987

A two-dimensional numerical simulation program is presented which enables the concentrion of impurity in Silicon to be caculated. The numerical algorithm used is based on the boundary element menthod.