• Title/Summary/Keyword: Silicon-Based

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Biochemical and cultural characteristics of mineral-solubilizing Acinetobacter sp. DDP346 (미네랄 가용화능을 갖는 Acinetobacter sp. DDP346의 생화학적 및 배양학적 특성)

  • Kim, Hee Sook;Lee, Song Min;Oh, Ka-Yoon;Kim, Ji-Youn;Lee, Kwang Hui;Lee, Sang-Hyeon;Jang, Jeong Su
    • Journal of Applied Biological Chemistry
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    • v.64 no.4
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    • pp.333-341
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    • 2021
  • In this study, to select strains suitable as microbial agent from among rhizosphere microorganisms present in rhizosphere soil and roots, the mineral solubilization ability, antifungal activity against 10 types of plant pathogenic fungi, and plant growth-promoting activity of rhizosphere microorganisms were evaluated. As a result, DDP346 was selected because it has solubilization ability of phosphoric acid, calcium carbonate, silicon, and zinc; nitrogen fixing ability; production ability of siderophore, indole-3-acetic acid, and aminocyclopropane-1-carboxylate deaminase; and antifungal activity against seven types of plant pathogenic fungi. DDP346 showed a 99.9% homology with Acinetobacter pittii DSM 21653 (NR_117621.1); phylogenetic analysis also revealed a close relationship with Acinetobacter pittii based on the 16S rRNA base sequence. The growth conditions of DDP346 were identified as temperatures in the range of 10-40 ℃, pH in the range of 5-11, and salt concentrations in the range of 0-5%. In addition, a negative correlation coefficient (r2 = -0.913, p <0.01) was shown between pH change and the solubilized phosphoric acid content of Acinetobacter sp. DDP346, and this is assumed to be due to the organic acid generated during culture. Consequently, through the evaluation of its mineral solubilization ability, antifungal activity against plant pathogenic fungi, and plant growth-promoting activity, the potential for the utilization of Acinetobacter sp. DDP346 as a multi-purpose microbial agent is presented.

Can Basic Income be an Alternative to Social Security? (기본소득은 미래 사회보장의 대안인가?)

  • Yang, Jae-jin
    • 한국사회정책
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    • v.25 no.1
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    • pp.45-70
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    • 2018
  • After critically assessing the effectiveness of basic income as an alternative to the existing social security system, this article argues that basic income is fundamentally incapable of providing an adequate protection for those in social risks or welfare needs. The proponents of basic income often claims that technological innovations will lead to the end of work and thus that basic income will be required for all citizens in the future. Moreover, they emphasize that labor market flexibility is making a large segment of work forces unstable working poor, what is often called the precariat who are not effectively protected by the existing social insurance programs. For them, basic income is the best source of social protection for the precariat of today and the citizens in the future, freeing them from the necessity of having a paid work. This article, however, points out the ineffectiveness of basic income as social protection due to its unustainably high cost that comes from unconditional benefit provisions regardless of levels of income, social risks, and welfare needs. Also it challenges the simplified 'Luddites' image of workless society in the future, arguning that techological unemployment can be overcome by new job creation as seen in Silicon Valley and job sharing following working time reduction. It maintains that it is more cost-effective and reliable to strengthen the welfare state based on the principle of reciprocity that aims at 'universal sufficient protection for those in social risks and welfare needs.'

Structure Safety Analysis of Composite Lattice Structure with Inspection Window (복합재 격자구조물의 점검창 형상에 따른 구조안전성 해석)

  • Kim, Dong-geon;Bae, Ju-chan;Son, Jo-wha;Lee, Sang-woo
    • Journal of the Korean Society of Propulsion Engineers
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    • v.22 no.6
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    • pp.94-103
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    • 2018
  • The purpose of designing composite lattice structure which applied to launching vehicle and tactical missile body is to minimize the thickness and weight for applied load. It is usually made of carbon fiber; fabricating with filament winding process over silicon mold, and provided with a window opening for inspection purpose if necessary. In this paper compression test is conducted without window opening in lattice structure and preliminary FEA is carried out to confirm its accuracy. And then FEA is performed for the case of window opening to evaluate the soundness and the safety factor of the structure. We have calculated for two kinds of window shape; rectangular one and hexagonal one. And we have calculated safety factors of the lattice structure with window opening in every case based on failure strength of rib and knot with varying the thickness and location of the window for hexagonal shape. Through our investigation, we have found out the followings; (1) the hexagonal shaped window is shown higher safety factor than rectangular one, (2) a window in a certain location is shown higher safety factor than others, (3) although the soundness of window structure is improved as increasing its thickness, a window of a certain thickness is shown higher safety factor than others because of stress concentration.

Molecular Dynamics Simulation on the Thermal Boundary Resistance of a Thin-film and Experimental Validation (분자동역학을 이용한 박막의 열경계저항 예측 및 실험적 검증)

  • Suk, Myung Eun;Kim, Yun Young
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.32 no.2
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    • pp.103-108
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    • 2019
  • Non-equilibrium molecular dynamics simulation on the thermal boundary resistance(TBR) of an aluminum(Al)/silicon(Si) interface was performed in the present study. The constant heat flux across the Si/Al interface was simulated by adding the kinetic energy in hot Si region and removing the same amount of the energy from the cold Al region. The TBR estimated from the sharp temperature drop at the interface was independent of heat flux and equal to $5.13{\pm}0.17K{\cdot}m^2/GW$ at 300K. The simulation result was experimentally confirmed by the time-domain thermoreflectance technique. A 90nm thick Al film was deposited on a Si(100) wafer using an e-beam evaporator and the TBR on the film/substrate interface was measured using the time-domain thermoreflectance technique based on a femtosecond laser system. A numerical solution of the transient heat conduction equation was obtained using the finite difference method to estimate the TBR value. Experimental results were compared to the prediction and discussions on the nanoscale thermal transport phenomena were made.

A Study on Optimization of Perovskite Solar Cell Light Absorption Layer Thin Film Based on Machine Learning (머신러닝 기반 페로브스카이트 태양전지 광흡수층 박막 최적화를 위한 연구)

  • Ha, Jae-jun;Lee, Jun-hyuk;Oh, Ju-young;Lee, Dong-geun
    • The Journal of the Korea Contents Association
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    • v.22 no.7
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    • pp.55-62
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    • 2022
  • The perovskite solar cell is an active part of research in renewable energy fields such as solar energy, wind, hydroelectric power, marine energy, bioenergy, and hydrogen energy to replace fossil fuels such as oil, coal, and natural gas, which will gradually disappear as power demand increases due to the increase in use of the Internet of Things and Virtual environments due to the 4th industrial revolution. The perovskite solar cell is a solar cell device using an organic-inorganic hybrid material having a perovskite structure, and has advantages of replacing existing silicon solar cells with high efficiency, low cost solutions, and low temperature processes. In order to optimize the light absorption layer thin film predicted by the existing empirical method, reliability must be verified through device characteristics evaluation. However, since it costs a lot to evaluate the characteristics of the light-absorbing layer thin film device, the number of tests is limited. In order to solve this problem, the development and applicability of a clear and valid model using machine learning or artificial intelligence model as an auxiliary means for optimizing the light absorption layer thin film are considered infinite. In this study, to estimate the light absorption layer thin-film optimization of perovskite solar cells, the regression models of the support vector machine's linear kernel, R.B.F kernel, polynomial kernel, and sigmoid kernel were compared to verify the accuracy difference for each kernel function.

Synthesis of akermanite bioceramics by solid-state reaction and evaluation of its bioactivity (고상반응법에 의한 아커마나이트 분말의 합성 및 생체활성도 평가)

  • Go, Jaeeun;Lee, Jong Kook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.5
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    • pp.191-198
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    • 2022
  • Zirconia and titanium alloys, which are mainly used for dental implant materials, have poor osseointegration and osteogenesis abilities due to their bioinertness with low bioactivity on surface. In order to improve their surface bioinertness, surface modification with a bioactive material is an easy and simple method. In this study, akermanite (Ca2MgSi2O7), a silicate-based bioceramic material with excellent bone bonding ability, was synthesized by a solid-state reaction and investigated its bioactivity from the analysis of surface dissolution and precipitation of hydroxyapatite particles in SBF solution. Calcium carbonate (CaCO3), magnesium carbonate (MgCO3), and silicon dioxide (SiO2) were used as starting materials. After homogeneous mixing of starting materials by ball milling and the drying of at oven, uniaxial pressing was performed to form a compacted disk, and then heat-treated at high temperature to induce the solid-state reaction to akermanite. Bioactivity of synthesized akermanite disk was evaluated with the reaction temperature from the immersion test in SBF solution. The higher the reaction temperature, the more pronounced the akermanite phase and the less the surface dissolution at particle surface. It resulted that synthesized akermanite particles had high bioactivity on particle surface, but it depended on reacted temperature and phase composition. Moderate dissolution occurred at particle surfaces and observed the new precipitated hydroxyapatite particles in synthetic akermanite with solid-state reaction at 1100℃.

A Performance Study on CPU-GPU Data Transfers of Unified Memory Device (통합메모리 장치에서 CPU-GPU 데이터 전송성능 연구)

  • Kwon, Oh-Kyoung;Gu, Gibeom
    • KIPS Transactions on Computer and Communication Systems
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    • v.11 no.5
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    • pp.133-138
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    • 2022
  • Recently, as GPU performance has improved in HPC and artificial intelligence, its use is becoming more common, but GPU programming is still a big obstacle in terms of productivity. In particular, due to the difficulty of managing host memory and GPU memory separately, research is being actively conducted in terms of convenience and performance, and various CPU-GPU memory transfer programming methods are suggested. Meanwhile, recently many SoC (System on a Chip) products such as Apple M1 and NVIDIA Tegra that bundle CPU, GPU, and integrated memory into one large silicon package are emerging. In this study, data between CPU and GPU devices are used in such an integrated memory device and performance-related research is conducted during transmission. It shows different characteristics from the existing environment in which the host memory and GPU memory in the CPU are separated. Here, we want to compare performance by CPU-GPU data transmission method in NVIDIA SoC chips, which are integrated memory devices, and NVIDIA SMX-based V100 GPU devices. For the experimental workload for performance comparison, a two-dimensional matrix transposition example frequently used in HPC applications was used. We analyzed the following performance factors: the difference in GPU kernel performance according to the CPU-GPU memory transfer method for each GPU device, the transfer performance difference between page-locked memory and pageable memory, overall performance comparison, and performance comparison by workload size. Through this experiment, it was confirmed that the NVIDIA Xavier can maximize the benefits of integrated memory in the SoC chip by supporting I/O cache consistency.

Transferring Calibrations Between on Farm Whole Grain NIR Analysers

  • Clancy, Phillip J.
    • Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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    • 2001.06a
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    • pp.1210-1210
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    • 2001
  • On farm analysis of protein, moisture and oil in cereals and oil seeds is quickly being adopted by Australian farmers. The benefits of being able to measure protein and oil in grains and oil seeds are several : $\square$ Optimize crop payments $\square$ Monitor effects of fertilization $\square$ Blend on farm to meet market requirements $\square$ Off farm marketing - sell crop with load by load analysis However farmers are not NIR spectroscopists and the process of calibrating instruments has to the duty of the supplier. With the potential number of On Farm analyser being in the thousands, then the task of calibrating each instrument would be impossible, let alone the problems encountered with updating calibrations from season to season. As such, NIR technology Australia has developed a mechanism for \ulcorner\ulcorner\ulcorner their range of Cropscan 2000G NIR analysers so that a single calibration can be transferred from the master instrument to every slave instrument. Whole grain analysis has been developed over the last 10 years using Near Infrared Transmission through a sample of grain with a pathlength varying from 5-30mm. A continuous spectrum from 800-1100nm is the optimal wavelength coverage fro these applications and a grating based spectrophotometer has proven to provide the best means of producing this spectrum. The most important aspect of standardizing NIB instruments is to duplicate the spectral information. The task is to align spectrum from the slave instruments to the master instrument in terms of wavelength positioning and then to adjust the spectral response at each wavelength in order that the slave instruments mimic the master instrument. The Cropscan 2000G and 2000B Whole Grain Analyser use flat field spectrographs to produce a spectrum from 720-1100nm and a silicon photodiode array detector to collect the spectrum at approximately 10nm intervals. The concave holographic gratings used in the flat field spectrographs are produced by a process of photo lithography. As such each grating is an exact replica of the original. To align wavelengths in these instruments, NIR wheat sample scanned on the master and the slave instruments provides three check points in the spectrum to make a more exact alignment. Once the wavelengths are matched then many samples of wheat, approximately 10, exhibiting absorbances from 2 to 4.5 Abu, are scanned on the master and then on each slave. Using a simple linear regression technique, a slope and bias adjustment is made for each pixel of the detector. This process corrects the spectral response at each wavelength so that the slave instruments produce the same spectra as the master instrument. It is important to use as broad a range of absorbances in the samples so that a good slope and bias estimate can be calculated. These Slope and Bias (S'||'&'||'B) factors are then downloaded into the slave instruments. Calibrations developed on the master instrument can then be downloaded onto the slave instruments and perform similarly to the master instrument. The data shown in this paper illustrates the process of calculating these S'||'&'||'B factors and the transfer of calibrations for wheat, barley and sorghum between several instruments.

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Optimization of 1.2 kV 4H-SiC MOSFETs with Vertical Variation Doping Structure (Vertical Variation Doping 구조를 도입한 1.2 kV 4H-SiC MOSFET 최적화)

  • Ye-Jin Kim;Seung-Hyun Park;Tae-Hee Lee;Ji-Soo Choi;Se-Rim Park;Geon-Hee Lee;Jong-Min Oh;Weon Ho Shin;Sang-Mo Koo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.3
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    • pp.332-336
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    • 2024
  • High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (Ron,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in Ron,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm2, indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

GPU Based Feature Profile Simulation for Deep Contact Hole Etching in Fluorocarbon Plasma

  • Im, Yeon-Ho;Chang, Won-Seok;Choi, Kwang-Sung;Yu, Dong-Hun;Cho, Deog-Gyun;Yook, Yeong-Geun;Chun, Poo-Reum;Lee, Se-A;Kim, Jin-Tae;Kwon, Deuk-Chul;Yoon, Jung-Sik;Kim3, Dae-Woong;You, Shin-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.80-81
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    • 2012
  • Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

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