• 한국정보통신학회논문지
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• 제4권5호
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• pp.1143-1150
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• 2000

단정도 (single-precision) 승산과 배정도 (double-precision) 승산을 연산할 수 있는 이중 모드 승산기 (dual mode multiplier; DMM)를 $0.25-\mum$ 5-metal CMOS 공정으로 설계하였다. 단정도 승산기 회로를 사용하여 배정도 승산을 연산할 수 있는 효율적인 알고리듬을 제안하였으며, 이는 배정도 승산을 4개의 단정도 부분 승산으로 분할하여 순차적인 승산-누적 연산으로 처리하는 방법을 기초로 한다. 제안된 방법은 배정도 승산기에 비해 latency와 throughput cycle은 증가하나, 회로 복잡도를 약 113로 감소시킬 수 있어 칩 면적과 전력소모 측면에서 장점을 갖는다. 설계된 DMM은 radix-4 Booth receding과 redundant binary(RB) 연산을 적용하여 설계된 $28-b\times28-b$ 단정도 승산기, 누적기 그리고 동작모드 선택을 위한 단순한 제어회로 등으로 구성되며, 약 25,000개의 트랜지스터와 $0.77\times0.40-m^2$의 면적을 갖는다. 시뮬레이션 결과, 2.5-V 전원전압에서 200-MHZ의 클록 주파수로 안전하게 동작할 수 있을 것으로 예상되며, 평균 전력소모는 배정도 승산모드에서 약 130-㎽이 다.

• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.3.1-3.1
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• 2011

Over the past decade, the major efforts for lowering the cost of electronics has been devoted to increasing the packaging efficiency of the integrated circuits (ICs), which is defined by the ratio of all devices on system-level board compared to the area of the board, and to working on a larger but cheaper substrates. Especially, in flexible electronics, the latter has been the favorable way along with using novel nanomaterials that have excellent mechanical flexibility and electrical properties as active channel materials and conductive films. Here, the tool for achieving large area patterning is by printing methods. Although diverse printing methods have been investigated to produce highly-aligned structures of the nanomaterials with desired patterns, many require laborious processes that need to be further optimized for practical applications, showing a clear limit to the design of the nanomaterial patterns in a large scale assembly. Here, we demonstrate the alignment of highly ordered and dense silicon (Si) NW arrays to anisotropically etched micro-engraved structures using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures. The assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays were subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As proof-of-concept, flexible back-gated NW field effect transistors (FETs) were fabricated. The fabricated FETs had an effective hole mobility of 0.17 $cm2/V{\cdot}s$ and an on/off ratio of ${\sim}1.4{\times}104$. These results demonstrate that our NW gravure printing technique is a simple and effective method that can be used to fabricate high-performance flexible electronics based on inorganic materials.

• 대한전자공학회논문지SD
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• 제43권1호
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• pp.79-84
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• 2006

본 논문에서는 저전력 휴대 멀티미디어 SoC를 위한 새로운 H.264 디블록킹 필터를 제안하였다. H.264 디블록킹 필터는 처리되는 화소값의 차이가 어떤 특정 조건을 만족하면 필터링의 일부 또는 전부를 수행하지 않아도 된다. 더욱이 양자화 계수값이 16 미만일 때에는 필터링 전체를 수행하지 않아도 된다. 이러한 특성을 이용하면 동작중에 디블록킹 필터 전체 또는 일부분을 가동 중단시킴으로서 전력 소모를 크게 줄일 수 있다. 제안하는 디블록킹 필터는 간단한 제어 회로를 사용하여 블록의 일부 또는 전부를 가동 중단시킬 수 있으며, 단일 하드웨어로 수평방향 필터링과 수직방향 필터링을 동시에 수행할 수 있다. 제안하는 저전력 디블록킹 필터는 $0.35{\mu}m$ 표준 셀 라이브러리 공정을 사용하여 실리콘 칩으로 구현되었다. 게이트 수는 약 20,000 게이트, 최대 동작 주파수는 108MHz, 최대 처리능력은 CCIR601 형식에서 30 frame/s이다.

• 한국군사과학기술학회지
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• 제1권1호
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.187-207
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• 1999

The thermal distributions near the growth interface of 150mm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10m from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it si confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient (G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective lengths of the thermal gradient for defect generation are varied, were defined the effective length as 10mm from the interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitial. The experimental results which FZ and CZ crystals are detached from the melt show that growth interfaces are filled with vacancy. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitial are necessary. Such interstitial recombine with vacancies which were generated at the growth interface, next occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by the distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melt, respectively.

• 한국결정성장학회지
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• 제6권2호
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• pp.185-193
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• 1996

(100) Si wafer를 $2.5^{\circ},\;5^{\circ}$ 기울인 뒤, dry $O_{2}$ 분위기에서 산화시킴으로써, 시편들 간의 산화 거동 및 산화에 의한 적층 결함 특성의 차이를 알아보았다. 시편을 $900~1200^{\circ}C$에서 산화시키고 ellipsometer로 두께를 측정한 결과 저탈각 (100) Si이 (100) Si보다 산화 속도가 빨랐으며, $5^{\circ}$ off면이 $2.5^{\circ}$ off면보다 더 빨랐다. 결정방향에 따른 산화속도 차이는 산화 온도가 높아질수록 줄어들었다. 각 시편의 속도 상수에 대한 활성화 에너지는 포물 성장 속도 상수의 경우 (100) Si, $2.5^{\circ}$ off (100) Si, $5^{\circ}$ off Si이 각각 27.3, 25.9, 27.6 kcal/mol이였고, 선형 성장 속도 상수는 58.6, 56.6, 57.4 kcal/mol이였다. 또한, 두 시편에 대해 산화막을 선택 식각하 고 광학 현미경으로 관찰하여, (100) Si에 비해 $5^{\circ}$ off된 면의 산화에 의한 적층 결함 밀도가 훨씬 낮음을 확인하였고, 적층 결함 간의 각도가 달라짐을 확인하였다.

• 한국한의학연구원논문집
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• 제14권3호
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• pp.103-111
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• 2008

Recently, skin diagnosis has been suggested as a promising tool for discrimination of Sasang Constitution, reported by examining the skin characteristics such as thickness, stiffness, slip, and skin textures like wrinkles and furrows. However, the works had a limitation in that clinical decision on the skin characteristics was made by relying upon oriental medicine doctors' subjective sense of touch. In order to objectify the skin diagnosis and claim its efficacy on the discrimination of the Sasang Constitutions, it is necessary to demonstrate its discrimination capability by providing numerical values in terms of physical quantities obtained from measurements using today's sensors and equipment technologies, which motivated this work as a priliminary step towards objectification of skin diagnosis. The skin characteristics focused in this work is the slip property of the back-hand skin that has been exploited using the dynamic friction measurement system. First, curved geometric effects of the back-hand skin on the measured lateral/vertical force signals were estimated using the artificially designed silicon coated structures, which led to a suggestion on a quality controlled experimental design based upon a empirical analysis model. Second, the experimental design thus suggested has been applied to the measurement of dynamic friction coefficients for two healthy male subjects of Taeumin (TE) and Soyangin (SY), respectively. The result shows that the dynamic friction coefficient is less for the SY subject than for the TE subject around the area of the skin used for diagnosis by the oriental medicine doctor, implying the TE subject's skin is more slippery than the SE subject's that is consistent with the oriental medicine doctor's diagnosis. Hopefully, this work can provide guidelines for obtaining quality data in friction measurement to be collected for discussion on the efficacy of the skin diagnosis and its objectification through statistical analysis.

• 전력전자학회논문지
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• 제20권3호
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• pp.214-222
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• 2015

The superiority of gallium nitride FET (GaN FET) over silicon MOSFET is examined in this paper. One of the outstanding features of GaN FET is low reverse-recovery charge, which enables continuous conduction mode operation of totem-pole bridgeless boost power factor correction (PFC) circuit. Among many bridgeless topologies, totem-pole bridgeless shows high efficiency and low conducted electromagnetic interference performance, with low cost and simple control scheme. The operation principle, control scheme, and circuit implementation of the proposed topology are provided. The converter is driven in two-module interleaved topology to operate at a power level of 5.5 kW, whereas phase-shedding control is adopted for light load efficiency improvement. Negative bias circuit is used in gate drivers to avoid the shoot-through induced by high speed switching. The superiority of GaN FET is verified by constructing a 5.5 kW prototype of two-module interleaved totem-pole bridgeless boost PFC converter. The experiment results show the highest efficiency of 98.7% at 1.6 kW load and an efficiency of 97.7% at the rated load.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.36-36
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• 2010

Currently, there are several newly developed energy resources for the future to replace petroleum resources such as hydrogen fuel cell, solar cell, wind power, and etc. Among them, solar cell has attracted a worldwide concern, because it has an enormous amount of resources. In general, a study of solar cells can be classified in to an area of bulk type and thin-film type. Inorganic solar cells based on silicon have been tremendously developed in technology and efficiency. However, since there are many lithographic steps, high processing temperature approximately $1000^{\circ}C$, and expensive raw materials, a manufacturing cost of device are nearly reaching a limit. Contrary to those disadvantages, organic solar cells can be manufactured at room temperature. Also, it has many advantages such as a low cost, easy fabrication of thin film, and possible manufacture to a large size. Because it can be made to be flexible, research and development on solar cells are actively in progress for the next generation. ever though an efficiency of the organic solar cell is low compared to that of inorganic one, a continuous study is needed. In this paper, we report optimal device structure obtained by a program simulation for design and development of highly efficient organic photovoltaic cells. we have also compared simulated results to experimental ones.