• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.367-367
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• 2010

Electrical characteristics of Large-grain silicon with Ni-induced crystallization which gate insulator is made of 80 nm $SiO_2$ and 20 nm SiNx was fabricated and measured with different channel widths, channel length fixed $10{\mu}m$. Focusing on the changes of channel widths from $4{\mu}m$ to $40{\mu}m$. Field-effect mobility decreased from 111.30 to $94.10\;cm^2/V_s$ when the channel widths increased. Still threshold voltage was almost similar with -1.06V.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.122-130
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• 1996

In an effort to learn more about the reaction mechanisms which lead to the compound nucleation at the interface of cobalt and silicon, electrical noise properties has been investigated for cobalt thin films deposited on silicon substrates by the electron beam evaporation and rf sputtering techniques. Microstructural variations at the Co/Si interfaces have been observed by transmission electronmicroscopy. Amorphous structures are observed at the Co/Si interfaces for samples whose cobalt thicknesses are less than 4nm and a polycrystalline compound nucleation has been occurred for thicker films. 1/f noise power same samples, and the spetral density has been normalized. The amplitude of 1/f noise power spectral density shows a gradual increase as the cobalt thickness is increased, and the amplitude has dropped abruptly after the compound nucleation. The variations of the noise parameters areassumed to be an indiction of the phase transformation along the nucleation reaction path, and amplitude has been interpreted as instabilities of the Co/Si interfacial structures.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.307-314
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• 1988

The thin, square-diaphragm silicon pressure sensor utilizing shear piezoresistance effect was designed and fabricated and its characteristics were examined. The sensor has only one diffused resistor, whereas conventional full-bridge sensor has four. Sensitivity is somewhat lower but temperature compensation is easier than the latter. The proposed sensor was fabricated with only one p-type diffused resistor of the dimension of 113x85\ulcorner\ulcornerlocated near the center of the edge of the diaphragm. The resistor was at 45\ulcornerwith the edge of the diaphragm. The sensitivity of the sensor was 36\ulcorner/V\ulcornermHg and was linear in the pressure range from 0 to 300 mmHg. The temperature coefficient without temperature compensation was 55 ppm/\ulcorner and it was decreased to about 0.17 mmHg/\ulcorner with compensation in the range from 10 to 60\ulcorner.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.683-687
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• 1997

The purpose of this work is to develop a highly reliable solar cell based on the diamond-like carbon(DLC)/silicon heterojunction. Thin films of DLC have been deposited by employing both filtered cathodic vacuum arc(FCVA) and magnetron plasma-enhanced chemical vapor deposition(m-PECVD) systems. Structural, electrical, and optical properties of DLC films deposited are systematically analyzed as a function of deposition conditions, such as magnetic field, substrate bias voltage, gas pressure, and nitrogen content. The I-V measurement has been used to elucidate the mechanism responsible for the conduction process in the DLC/Si junction. Photoresponse characteristics of the junction are measured and its reliability against temperature and light stresses is also analyzed.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1151-1152
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• 2015

Silicon zinc oxide (SZO) thin films were deposited via co-sputtering. Two kinds of post-treatment, furnace annealing and hot pressing, were carried out on the deposited SZO films. The effects of the post-treatment on the chemical bond and surface roughness of the deposited SZO films were analyzed as functions of the post-treatment conditions that were used. It was observed from the X-ray photoelectron spectroscopy (XPS) results that the amount of Si-O bonds in the SZO film drastically increased after the low-temperature furnace annealing. The experiment results showed that the hot pressing method would be favorable as it could improve the electrical characteristics of the SZO-TFTs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.98-98
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• 2009

Hydrogenated nano-, microcrystalline silicon 박막(nc-, ${\mu}c-Si:H$)은 박막 트랜지스터 및 실리콘 박막형 태양전지등에 널리 쓰이고 있다. 이러한 결정화 실리콘 박막을 내장형 안테나를 사용하여 고밀도 플라즈마를 발생시킬 수 있는 장치를 통하여 증착 후 열처리 공정이 없는 방법을 사용하여 박막을 제작하였다. 특히, 증착시 기판에 바이어스를 함께 인가하므로 증착된 박막의 결정화에 미치는 영향에 관한 연구를 하였다. 기판에 인가된 바이어스가 60W일 때 가장 높은 결정화율을 보이는 것을 알 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.297-300
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• 2005

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

• Ceramist
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• v.21 no.2
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• pp.75-82
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• 2018

In the photovoltaics (PV) industry, there were many efforts to reduce the cost of production with high efficiency. The single most important cost factor in silicon technology is the wafer, accounting presently for ~35% of the module cost. it was already shown that the solar cell efficiency can be maintained up to the thickness range of $40-60{\mu}m$. The direct production of ultra-thin silicon wafer is very attractive and numerous different techniques, such as electrochemical process, ion implantation, and epitaxial growth, have been proposed and developed in many academic and industrial laboratories.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).