• 한국진공학회지
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• 제20권6호
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• pp.395-402
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• 2011

원자힘 현미경을 이용하여 실리콘 기판 위에 증착된 실리콘 나노선과 리튬화된 실리콘 나노선의 나노기계적 성질을 연구했다. 금 촉매를 사용하여 스테인리스 기판 위에서 증기-액체-고체 과정을 통해 실리콘 나노선을 합성하였다. 완전히 리튬화된 실리콘 나노선을 얻기 위해서 전기 화학적 방법을 사용했고, 이를 실리콘 기판 위에 증착하였다. 접촉모드 원자힘 현미경으로 측정된 표면 거칠기는 실리콘 나노선에서 $0.65{\pm}0.05$ nm에 비해 리튬화된 실리콘 나노선에서 $1.72{\pm}0.16$ nm으로 더 큰 값을 보여주었다. 탐침과 표면 사이의 접착력에서 리튬화의 영향을 조사하기 위해 힘 분광기법을 사용했다. 실리콘 나노선의 접착력이 실리콘 기판과 ~60 nN으로 흡사한 반면에, 리튬화된 실리콘 나노선은 ~15 nN으로 더 작은 값을 나타냈다. 또한, 탄성적으로 부드러운 무정형 구조 때문에 국부적 탄성 스프링 상수도 실리콘 나노선 66.30 N/m보다 완전히 리튬화된 실리콘 나노선이 16.98 N/m으로 상대적으로 작았다. 실리콘 나노선과 완전히 리튬화된 실리콘 나노선에서 탐침과 표면 사이에 마찰력의 수직항력 의존성과 스캔 속도 의존성을 조사하기 위하여 각 0.5~4.0 Hz와 0.01~200 nN으로 측정했다. 본 연구에서 실리콘과 리튬화된 실리콘의 기계적 성질에 관련된 접착력과 마찰력의 경향성이 보여졌고 이러한 방향의 연구는 충-방전 동안 리튬화된 나노수준의 영역의 화학적 맵핑에 응용성을 보여준다.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2006년도 제33회 KOSCO SYMPOSIUM 논문집
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• pp.235-241
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• 2006

Catalytic combustion is one of the suitable methods for micro power source due to high energy density and no flame quenching. Catalyst loading in the micro structured combustion chamber is one of the most important issues in the development of micro catalytic combustors. In this research, to coat catalyst on the chamber wall, two methods were investigated. First, $Al_2O_3$ was selected as a support of Pt and $Pt/Al_2O_3$ was synthesized through the alumina sol-gel procedure. To improve the coating thickness and adhesion between catalyst and substrate, heat resistant and water solvable organic-inorganic hybrid binder was used. Porous silicon was also investigated as a catalyst support for platinum. Through the parametric studies of current density and etching time, fabrication process of $1{\sim}2{\mu}m$ of diameter and about $25{\mu}m$ depth pores was confirmed. Coated substrates were test in the micro channel combustor which was fabricated by the wet etching and machining of SUS 304. Using $Pt/Al_2O_3$ coated substrate and Pt coated porous silicon substrate, conversion rate of fuel was over 95% for $H_2$/Air premixed gas.

• Applied Microscopy
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• 제45권4호
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• 대한기계학회논문집B
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• 제30권2호
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• pp.153-160
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• 2006

A technique for measuring surface temperature field in micro scale is newly proposed, which uses temperature-sensitive fluorescent (TSF) dye coated on the surface and is easily implemented with a fluorescence microscope and a CCD camera. The TSF dye is chosen among mixtures of various chemical compositions including rhodamine B as the fluorescent dye to be most sensitive to temperature change. In order to examine the effectiveness of this temperature measurement technique, numerical analysis and experiment on transient conduction heat transfer for two different substrate materials, i. e., silicon and glass, are performed. In the experiment, to accurately measure the temperature with high resolution temperature calibration curves were obtained with very fine spatial units. The experimental results agree qualitatively well with the numerical data in the silicon and glass substrate cases so that the present temperature measurement method proves to be quite reliable. In addition, it is noteworthy that the glass substrate is more appropriate to be used as thermally-insulating locally-heating heater in micro thermal devices. This fact is identified in the temperature measuring experiment on the locally-heating heaters made on the wafer of silicon and glass substrates. Accordingly, this technique is capable of accurate and non-intrusive high-resolution measurement of temperature field in microscale.

• 한국연소학회지
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• 제11권2호
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• pp.7-14
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• 2006

Catalytic combustion is one of the suitable methods for micro power source due to high energy density and it can be applied to micro structured chamber without consideration of quenching since it is flameless combustion. Catalyst loading in the micro structured combustion chamber is one of the most important issues in the development of micro catalytic combustors. In this research, to coat catalyst on the chamber wall, two methods were investigated. First, $Al_2O_3$ was selected as a support of Pt and $Pt/Al_2O_3$ was synthesized through the alumina sol-gel procedure. To improve the coating thickness and adhesion between catalyst and substrate, heat resistant and water solvable organic-inorganic hybrid binder was used. Porous silicon was also investigated as a catalyst support for platinum. Through the parametric studies of current density and etching time, fabrication process of $1{\sim}2{\mu}m$ of diameter and about $25{\mu}m$ depth pores was confirmed. Coated substrates were test in the micro channel combustor which was fabricated by the wet etching and machining of SUS 304. Using $Pt/Al_2O_3$ coated substrate and Pt coated porous silicon substrate, conversion rate of fuel was over 95 % for $H_2/Air$ premixed gas.

• 한국결정성장학회지
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• 제4권3호
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• pp.238-244
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• 1994

보로실리케이트 유리기판과 석영기판을 사용하여 $800^{\circ}C~520^{\circ}C$의 온도 범위에서 용액 성장법에 의한 다결정 실리콘 박막의 성장에 관해 조사 하였다. 기판상에는 용애과의 젖음성을 좋게 해주기 위해 박막의 알루미늄츠오가 실리콘층이 증착되었으며, 용매로는 알루미늄과 실리콘옥사이드와의 반응에 의해서 일어난다. 결정립 크기가 수백 마이크론까지 이르는 실리콘을 얻을 수 있었으며, 석영기 판의 경우에는 보르실리 케이트 유리기판보다 강한 (111) 우선 성장 방향을 보여주고 있다.

• 마이크로전자및패키징학회지
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• 제19권4호
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• pp.19-23
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• 2012

최근 발광다이오드(LED)의 출력 성능을 높이고, 전력 소비를 줄이기 위해 LED 패키지 분야에서 실리콘 기판 연구가 집중되고 있다. 본 연구에서는 공정 비용이 낮고 생산성이 높은 습식 식각을 이용하여 실리콘 기판의 실리콘 관통 비아 식각 공정을 살펴보았다. KOH를 이용한 양면 습식 식각 공정과 습식 식각과 건식 식각을 병행한 두 가지 공정 방법으로 실리콘 관통 비아를 제작하였고, 식각된 실리콘 관통 비아에 Cu 전극과 배선은 전기도금으로 증착하였다. Cu 전극을 연결하는 배선의 전기저항은 약 $5.5{\Omega}$ 정도로 낮게 나타났고, 실리콘 기판의 열 저항은 4 K/W으로 AlN 세라믹 기판과 비슷한 결과를 보였다.

• Bulletin of the Korean Chemical Society
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• 제18권1호
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• pp.56-61
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• 1997

Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• 센서학회지
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• 제26권2호
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• pp.91-95
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• 2017

Recently, infrared (IR) spectrometers have been required in various fields such as environment, safety, mobile, automotive, and military. This IR dispersive sensor detection method of substances is widely used. In this study, we fabricated a silicon (Si) prism-based near infrared (NIR) spectrometer utilizing micro electro mechanical system (MEMS) technology. Si prism-based NIR spectrometer utilizing MEMS technology consists of upper, middle, and lower substrates. The upper substrate passes through the incident IR ray selectively. The middle substrate, acting as a prism, disperses and separates the incident IR beam. The lower substrate has an amorphous Si (a-Si)-based bolometer array to detect the IR spectrum. The fabricated Si prism-based NIR spectrometer utilizing MEMS technology has the advantage of a simple structure, easy fabrication steps, and a wide NIR region operating range.