• Title/Summary/Keyword: Silicon powder

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Fabrication of piezoelectric PZT thick film by aerosol deposition method (에어로졸 증착법에 의한 압전 PZT 후막의 제조)

  • Kim, Ki-Hoon;Bang, Kook-Soo;Park, Chan
    • Journal of Ocean Engineering and Technology
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    • v.27 no.6
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    • pp.95-99
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    • 2013
  • Lead zirconate titanate (PZT) thick films with a thickness of $10-20{\mu}m$ were fabricated on silicone substrates using an aerosol deposition method. The starting powder, which had diameters of $1-2{\mu}m$, was observed using SEM. The average diameter ($d_{50}$) was $1.1{\mu}m$. An XRD analysis showed a typical perovskite structure, a mixture of the tetragonal phase and rhombohedral phase. The as-deposited film with nano-sized grains had a fairly dense microstructure without any cracks. The deposited film showed a mixture of an amorphous phase and a very fine crystalline phase by diffraction pattern analysis using TEM. The as-deposited films on silicon were annealed at a temperature of $700^{\circ}C$. A 20-${\mu}m$ thick PZT film was torn out as a result of the high compressive stress between the PZT film and substrate.

Research Trends of the Mo-Si-B Alloys as Next Generation Ultra-high-temperature Alloys (차세대 초고온 합금인 Mo-Si-B 합금의 연구 동향)

  • Choi, Won June;Park, Chun Woong;Park, Jung Hyo;Kim, Young Do;Byun, Jong Min
    • Journal of Powder Materials
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    • v.26 no.2
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    • pp.156-165
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    • 2019
  • Over the last decade, the next generation's ultra-high-temperature materials as an alternative to Nickel-based superalloys have been highlighted. Ultra-high-temperature materials based on refractory metals are one of several potential candidates. In particular, molybdenum alloys with small amounts of silicon and boron (Mo-Si-B alloys) have superior properties at high temperature. However, research related to Mo-Si-B alloys were mainly conducted by several developed countries but garnered little interest in Korea. Therefore, in this review paper, we introduce the development history of Mo-Si-B alloys briefly and discuss the properties, particularly the mechanical and oxidation properties of Mo-Si-B alloys. We also introduce the latest research trends of Mo-Si-B alloys based on the research paper. Finally, for domestic research related to this field, we explain why Mo-Si-B alloys should be developed and suggest the potential directions for Mo-Si-B alloys research.

A study on the manufacture of cylindrical vaporization amplification sheets using centrifugal force (원심력을 이용한 원통형 증기화 증폭 시트 제작 연구)

  • Ko, Min-Sung;Wi, Eun-Chan;Yun, Yi-Seob;Lee, Joo-Hyung;Baek, Seung-Yub
    • Design & Manufacturing
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    • v.16 no.1
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    • pp.43-49
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    • 2022
  • As technologies in various industrial fields develop, high-quality parts are required. In the past, precision parts were produced by the contact machining method, but the contact machining method has clear limitations. In order to solve this problem, research on a non-contact processing method has been conducted, and laser processing and electric discharge processing are representative. However, the non-contact method has a problem in that productivity is insufficient, and there is a problem that it takes a lot of time to continuously process microholes. Researchers have developed an electron beam drilling equipment for continuous processing of fine holes, and a vaporization amplification sheet to increase the processing efficiency of the equipment. In this study, a cylindrical vaporization amplification sheet using room temperature curing type silicon was fabricated, and the metal distribution and thickness uniformity of the produced sheet were analyzed. In order to manufacture a cylindrical vaporization amplification sheet, an equipment capable of using centrifugal force was developed, and a sample in which metal powder was evenly distributed and a constant thickness was produced.

Waste Glass as an Activator in Class-C fly Ash/GGBS based Alkali Activated Material

  • Sasui, Sasui;Kim, Gyu Yong;Lee, Sang Kyu;Son, minjae;Hwang, Eui Chul;Nam, Jeong Soo
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2020.11a
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    • pp.77-78
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    • 2020
  • An alkaline activator was synthesized by dissolving waste glass powder (WGP) in NaOH-4M solution to explore its effects on the Class-C fly ash (FA) and ground granulated blast furnace slag (GGBS) based alkali-activated material (AAM). The compressive strength and porosity were measured, and (SEM-EDX) were used to study the hydration mechanism and microstructure. Results indicated that the composition of alkali solutions was significant in enhancing the properties of the obtained AAM. As the amount of dissolved WGP increased in alkaline solution, the silicon concentration increased, causing the accelerated reactivity of FA/GGBS to develop Ca-based hydrate gel as the main reaction product in the system, thereby increasing the strength. Further increase in WGP dissolution led to strength loss, which were believed to be due to the excessive water demand of FA/GGBS composites to achieve optimum mixing consistency. Increasing the GGBS proportion in a composite also appeared to improve the strength which contributed to develop C-S-H-type hydration.

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New Boron Compound, Silicon Boride Ceramics for Capturing Thermal Neutrons (Possibility of the material application for nuclear power generation)

  • Matsushita, Jun-ichi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.15-15
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    • 2011
  • As you know, boron compounds, borax ($Na_2B_4O_5(OH)_4{\cdot}8H_2O$) etc. were known thousands of years ago. As for natural boron, it has two naturally occurring and stable isotopes, boron 11 ($^{11}B$) and boron 10 ($^{10}B$). The neutron absorption $^{10}B$ is included about 19~20% with 80~81% $^{11}B$. Boron is similar to carbon in its capability to form stable covalently bonded molecular networks. The mass difference results in a wide range of ${\beta}$ values between the $^{11}B$ and $^{10}B$. The $^{10}B$ isotope, stable with 5 neutrons is excellent at capturing thermal neutrons. For example, it is possible to decrease a thermal neutron required for the nuclear reaction of uranium 235 ($^{235}U$). If $^{10}B$ absorbs a neutron ($^1n$), it will change to $^7Li+^1{\alpha}$ (${\alpha}$ ray, like $^4He$) with prompt ${\gamma}$ ray from $^{11}B$ $^{11}B$ (equation 1). $$^{10}B+^1n\;{\rightarrow}\;^{11}B\;{\rightarrow}\; prompt \;{\gamma}\;ray (478 keV), \;^7Li+4{\alpha}\;(4He)\;\;\;\;{\cdots}\; (1)$$ If about 1% boron is added to stainless steel, it is known that a neutron shielding effect will be 3 times the boron free steel. Enriched boron or $^{10}B$ is used in both radiation shielding and in boron neutron capture therapy. Then, $^{10}B$ is used for reactivity control and in emergency shutdown systems in nuclear reactors. Furthermore, boron carbide, $B_4C$, is used as the charge of a nuclear fission reaction control rod material and neutron cover material for nuclear reactors. The $B_4C$ powder of natural B composition is used as a charge of a control material of a boiling water reactor (BWR) which occupies commercial power reactors in nuclear power generation. The $B_4C$ sintered body which adjusted $^{10}B$ concentration is used as a charge of a control material of the fast breeder reactor (FBR) currently developed aiming at establishment of a nuclear fuel cycle. In this study for new boron compound, silicon boride ceramics for capturing thermal neutrons, preparation and characterization of both silicon tetraboride ($SiB_4$) and silicon hexaboride ($SiB_6$) and ceramics produced by sintering were investigated in order to determine the suitability of this material for nuclear power generation. The relative density increased with increasing sintering temperature. With a sintering temperature of 1,923 K, a sintered body having a relative density of more than 99% was obtained. The Vickers hardness increased with increasing sintering temperature. The best result was a Vickers hardness of 28 GPa for the $SiB_6$ sintered at 1,923K for 1 h. The high temperature Vickers hardness of the $SiB_6$ sintered body changed from 28 to 12 GPa in the temperature range of room temperature to 1,273 K. The thermal conductivity of the SiB6 sintered body changed from 9.1 to 2.4 W/mK in the range of room temperature to 1,273 K.

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Synthesis of Silicon-Carbon by Polymer Coating and Electrochemical Properties of Si-C|Li Cell (고분자 도포를 이용한 실리콘-탄소의 합성 및 Si-C|Li Cell의 전기화학적 특성)

  • Doh, Chil-Hoon;Jeong, Ki-Young;Jin, Bong-Soo;An, Kay-Hyeok;Min, Byung-Chul;Choi, Im-Goo;Park, Chul-Wan;Lee, Kyeong-Jik;Moon, Seong-In;Yun, Mun-Soo
    • Journal of the Korean Electrochemical Society
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    • v.9 no.3
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    • pp.107-112
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    • 2006
  • Si-C composites were prepared by the carbonization of silicon powder covered by polyaniline(PAn). Physical and electrochemical properties of the Si-C composites were characterized by the particle size analysis, X-ray diffraction technique, scanning electron microscope, and electrochemical test of battery. The average particle size of the Si was increased by the coating of PAn and somewhat reduced by the carbonization to give silicone-carbon composites. XRD analysis' results were confirmed co-existence of crystalline silicon and amorphous-like carbon. SEM photos showed that the silicon particle were well covered with carbonacious materials depend on the PAn content. Si-C|Li cells were fabricated using the Si-C composites and were tested using the galvanostatic charge-discharge test. Si-C|Li cells gave better electrochemical properties than that of Si|Li cell. Si-C|Li cell using the Si-C from HCl undoped PAn Precursor showed better electrochemical properties than that from HCl doped PAn Precursor. Using the electrolyte containing FEC as an additive, the initial discharge capacity was increased. After that the galvanostatic charge-discharge test with the GISOC(gradual increasing of the state of charge) condition was carried out. Si-C(Si:PAn:50:50 wt. ratio)|Li cell showed 414 mAh/g of the reversible specific capacity, 75.7% of IIE(initial intercalation efficiency), 35.4 mAh/g of IICs(surface irreversible specific capacity).

Application of Silicon Sludge from Semiconductor Manufacturing Process as Pigments and Paints through Titanium Dioxide Coating (반도체 제조공정에서 발생하는 실리콘 슬러지의 이산화티타늄 코팅을 통한 안료 및 도료 소재로의 응용)

  • Yeon-Ryong Chu;Minki Sa;Jiwon Kim;Suk Jekal;Chan-Gyo Kim;Ha-Yeong Kim;Song Lee;Hyung Sub Sim;Chang-Min Yoon
    • Journal of the Korea Organic Resources Recycling Association
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    • v.31 no.3
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    • pp.35-41
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    • 2023
  • In this study, silicon sludge generated in semiconductor manufacturing process is recycled and applied as materials for pigments and paints. In detail, metallic impurities are removed from silicon sludge to obtain plate-like silicon sludge powder (SW-sludge), which is then coated with titanium dioxide via sol-gel method (TCS-sludge). SW-sludge and TCS-sludge are dispersed in hydrophilic transparent varnish and sprayed onto glass substrates to observe the possibility for the application as materials for pigments and paints. Notably, the applicability of TCS-sludge-based paint is improved compared to SW-sludge-based paint after the titanium dioxide coating. Moreover, the color of TCS-sludge-based paint turns into white. Accordingly, it is confirmed that the applicability and hydrophilicity are improved by the presence of outer titanium dioxide layer. In this regard, it is expected that the recycled TCS-sludge may be a future material for the application as pigments and paints.

A study on the calcination process of synthetic silica powder for quartz glass crucibles (석영유리 도가니용 합성 실리카 분말의 하소공정에 관한 연구)

  • Yang, Jae-Kyo;Jin, Yun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.4
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    • pp.128-135
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    • 2022
  • The inside of a quartz glass crucible for semiconductor processing, called a transparent layer, is manufactured using synthetic silica powder. Bubbles existing in the transparent layer of the crucible cause a problem of reducing the quality of the crucible as well as the yield of the silicon ingot. Therefore, the main goal of the synthetic silica powder, which is the raw material of the transparent layer, is to minimize the bubble generation factor. For this purpose, in the case of synthetic silica powder, it is necessary to minimize silanol groups, carbon and pores. In this study, synthetic silica gel was prepared using the sol-gel method, and changes in carbon content and specific surface area were investigated according to calcination temperature and dwelled time in a two-stage calcination process. The first-stage calcination process was performed between 500℃ and 600℃ and the second-stage calcination process was performed between 1000℃ and 1100℃. The dwelled time was carried out from 10 minutes to a maximum of 12 hours. The carbon content of the powder calcined at 1000℃ for 1 hour was 0.0031 wt.%, and the specific surface area of the powder calcined at 1100℃ for 12 hours was 16.6 m2/g.

Microstructure Control and Mechanical Properties of Continuously Porous SiC-Si3N4 Composites (연속다공질 SiC-Si3N4 복합체의 미세구조 및 기계적 특성)

  • Paul Rajat Kanti;Gain Asit Kumar;Lee Hee-Jung;Jang Hee-Dong;Lee Byong-Taek
    • Korean Journal of Materials Research
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    • v.16 no.3
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    • pp.188-192
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    • 2006
  • The microstructures and mechanical properties of continuously porous $SiC-Si_3N_4$composites fabricated by multi-pass extrusion were investigated at different Si levels added. Si-powder with different weight percentages (0%, 5%, 10%, 15%, 20%) was added to the SiC powder to make the raw mixture powders, with $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives, carbon ($10-15{\mu}m$) as a pore-forming agent, ethylene vinyl acetate as a binder and stearic acid ($CH_3(CH_2)_{16}COOH$) as a lubricant. In the continuously porous $SiC-Si_3N_4$ composites, $Si_3N_4$ whiskers like the hairs of nostrils were frequently observed on the wall of the pores. In this study, the morphology of the $Si_3N_4$ whiskers was investigated with the silicon addition content. In the composites containing of 10 wt% Si, a large number of $Si_3N_4$ whiskers was found at the continuous pore regions. In the sample to which 15 wt% Si powder was added, maximum values of about 101 MPa bending strength and 57.5% relative density were obtained.

Semi-Insulating SiC Single Crystals Grown with Purity Levels in SiC Source Materials (고순도 SiC 파우더를 이용한 반절연 SiC 단결정 성장)

  • Lee, Chae Young;Choi, Jeong Min;Kim, Dae Sung;Park, Mi Seon;Jang, Yeon Suk;Lee, Won Jae;Yang, In Seok;Kim, Tae Hee;Chen, Xiufang;Xu, Xiangang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.2
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    • pp.100-103
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    • 2019
  • The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.