• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.625-630
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• 2012

Highly porous silicon carbide (SiC) ceramics were fabricated from polysiloxane, SiC and carbon black fillers, AlN-$Y_2O_3$ additives, and poly (ether-co-octene) (PEOc) and expandable microsphere templates. Powder mixtures with a fixed PEOc content (30 wt%) and varying SiC filler contents from 0-21 wt% were compression-molded. During the pyrolysis process, the polysiloxane was converted to SiOC, the PEOc generated a considerable degree of interconnected porosity, and the expandable microspheres generated fine cells. The polysiloxane-derived SiOC and carbon black reacted and synthesized nano-sized SiC with a carbothermal reduction during a heat-treatment. Subsequent sintering of the compacts in a nitrogen atmosphere produced highly porous SiC ceramics with porosities ranging from 78 % to 82 % and a flexura lstrength of up to ~7 MPa.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1900-1902
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• 2005

본 연구에서는 scanning probe microscopy(SPM)을 이용하여 국소영역에서 silicon nanocrystal(Si NC)의 전기적 특성을 분석하였다. Si NCs은 압축된 silicon powder를 laser로 분해하는 laser ablation 방식으로 제조되었고, sharpening oxidation 과정을 통하여 Si NC 주변에 oxide shell을 형성시켰다. 이 과정에서 Si NCs은 $10{\sim}50 nm$의 크기와 약 $10^{11}/cm^2$의 밀도로 $SiO_2$층에 증착되었다. SPM의 conducting tip을 통하여 전하는 각각의 Si NC로 주입되게 되고, 이로 인하여 발생하는 SCM image와 dC/dV curve의 변화를 통하여 Si NC에서 전하 거동을 모니터 하였다. 또한 국소영역에서 Si NC의 전기적 특성을 MOS capacitor 구조에서의 C-V 특성과 비교 분석하였다.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.6
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• pp.52-57
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• 1999

Funtional metal prototypes are often required in numerous industrial applications. These components are typically needed in the early stage of a project to determine form, fit and function. Recent R/P(Rapid Prototyping) part are made of soft materials such as plastics, wax, paper, these master models cannot be employed durable test in real harsh working environment. Parts by direct metal rapid tooling method, such as laser sintering, by now are hard to get net shape, pores of the green parts of powder casting method must be infiltrated to get proper strength as tool, and new type of 3D direct tooling system combining fabrication welding arc and cutting process is reported by song etc. But a system which can build directly 3D parts of high performance functional material as metal part would need long period of system development, massive investment and other serious obstacles, such as patent. In this paper, through the rapid tooling process as silicon rubber molding using R/P master model, and fabricate wax pattern in that silicon rubber mold using vacuum casting method, then we tranlsated the wax patterns to numerous metal prototypes by new investment casting process combined conventional investment casting with rapid pototyping & rapid tooling process. with this wax-injection-mold-free investment casting, we developed new investment casting process of fabricating numerous functional metal prototypes from one master model, combined 3-D CAD, R/P and conventional investment casting and tried to expect net shape measuring total dimension shrinkage from R/P part to metal part.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

• Resources Recycling
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• v.12 no.3
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• pp.25-30
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• 2003

The synthesis of SiC used for the parts of the gas turbine and the heat exchanger, was carried out. In this study, wire cutting slurry of silicon wafer and the graphite rod of spent zinc-carbon battery were applied to the starting materials for the synthesis. The powders of Si or Si+SiC were obtained from the waste material by filtration, gravity separation and magnetic separation. Graphite powder was produced by dismantling, grinding and gravity separation from spent zinc-carbon battery. The synthesis of SiC could be completed from the mixture powders of Si and C or Si+SiC and C at the condition of equivalent ratio of Si and C, atmosphere of Ar or vacuum, temperature of above 1$600^{\circ}C$ and 2 hours reactions. The purity of synthesized Si-C was above 99%.

• Korean Journal of Materials Research
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• v.31 no.5
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• pp.301-311
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• 2021

The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y₂O₃-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y₂O₃-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y₂O₃-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y₂O₃ phases are detected by XRD analysis without the appearance of graphite. As the content of Y₂O₃ in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y₂O₃ added has 0.20 % apparent porosity and 96.9 % relative density.

• Korean Chemical Engineering Research
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• v.60 no.3
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• pp.439-445
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• 2022

In this study, Silicon and petroleum pitch were coated on the surface of Si/C fiber manufactured using electrospinning to improve the electrochemical performances. SiO₂/PAN fiber was prepared by electrospinning with TEOS and PAN at various ratios dissolved in DMF. The characteristics of carbonization, reduction, and pitch coating processes were investigated for the optimal process of the pitch coated Si/C fiber anode composite. Anode composite prepared with TEOS/PAN = 4/6 (CR-46) after carbonization and reduction process has a capacity of 657 mAh/g. To improve capacity and stability, Si powder and PFO pitch were coated at the surface of CR-46. When the pitch composition was fixed at 10 wt%, it was found that the capacity increased as the weight ratio of silicon increased, but the stability decreased. The pitch coated Si/C fiber composite with 10 wt% silicon has high capacity of 982.4 mAh/g and capacity retention of 86.1%. In the test to evaluate rate performance, the rate capability was 80.2% (5C/0.1C).

• The Journal of Korean Academy of Prosthodontics
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• v.35 no.1
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• pp.221-243
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• 1997

The objective of this study was to characterize the mechanical properties of $Y_{2}O_{3}$-containing glass infiltrated ceramic core material, which was made by pressureless powder packing method. A pure alumina powder with a grain size of about $4{\mu}m$ was packed without pressure is silicon mold to form a bar shaped sample, and applied PVA solution as a binder. Samples were sinterd at $1350^{\circ}C$ for 1 hour. After cooling, $Y_{2}O_{3}$-containing glass($SiO_{2},\;Y_{2}O_{3},\;B_{2}O_{3},\;Al_{2}O_{3}$, ect) was infiltrated to the sinterd samples at $1300^{\circ}C$ for 2 hours and cooled. Six different proportions $Y_{2}O_{3}$ of were used to know the effect of the mismatch of the thermal expansion coefficient between alumina powder and glass. The samples were ground to $3{\times}3{\times}30$ mm size and polished with $1{\mu}m$ diamond paste. Flexural strength, fracture toughness, hardness and other physical properties were obtained, and the fractured surface was examined with SEM and EPMA. Ten samples of each group were tested and compared with In-Ceram(tm) core materials of same size made in dental laboratory. The results were as follows : 1. The flexural strengths of group 1 and 3 were significantly not different with that of In-Ceram, but other experimental groups were lower than In-Ceram. 2. The shrinkage rate of samples was 0.42% after first firing, and 0.45% after glass infiltration. Total shrinkage rate was 0.87%. 3. After first firing, porosity rate of experimental groups was 50%, compared with 22.25% of In-Ceram. After glass infiltration, porosity rate of experimental groups was 2%, and 1% in In-Ceram. 4. There was no statistical difference in hardness between two materials tested, but in fracture toughness, group 2 and 3 were higher than In-Ceram. 5. The thermal expansion coefficients of experimental groups were varied to $4.51-5.35{\times}10^{-6}/^{\circ}C$ according to glass composition, also the flexural strengths of samples were varied. 6. In a view of SEM, many microparticles about $0.5{\mu}m$ diameter and $4{\mu}m$ diameter were observed in In-Ceram. But in experimental group, the size of most particles was about $4{\mu}m$, and a little microparticles was observed. The results obtained in this study showed that the mismatch of the thermal expansion coefficients between alumina powder and infiltrated glass affect the flexural strength of alumin/glass composite. The $Y_{2}O_{3}$-containing glass infiltrated ceramic core made by powder packing method will takes less time and cost with sufficient flexural strength similar to all ceramic crown made with slip casting technique.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.383-388
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• 2019

High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.