• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.169-175
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• 1998

The plasma etching of polysilicon was performed with the HBr/$Cl_2/He-O_2$ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as $Cl_2/He-O_2$and HBr/$Cl_2$were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxvgen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.9 s.186
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• pp.174-178
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• 2006

Pyramid shape of micro pattern is applied to the light guide panel (LGP) to enhance the uniformity of the brightness of the LCD. The micro pyramids are molded in intaglio on the surface of the LGP. The size of each pyramid is 5$\mu$m $\times$ 5$\mu$m on bottom and the height is about 3.5$\mu$m. The pyramids are distributed on the LGP surface randomly to be sparser where the light comes in and denser at the opposite side as a result of a simulation using lightools$^{TM}$ Based on this design, a silicon pattern master and a nickel stamper are fabricated by MEMS process and electro plating process. Intaglio micro pyramids are fabricated on the 6' of silicon wafer from the anisotropic etching using KOH and the process time, temperature of the KOH solution, etc are optimized to obtain precise shape of the pattern. A Wi stamper is fabricated from this pattern master by electro plating process and the embossed pyramid patterns turns out to be well defined on the stamper. Adopting this stamper to the mold base with two cavities, 1.8' and 3.6' LGPs are injection molded.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.1051-1054
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• 2000

We developed the micro CSF (celebrospinal fluid) shunt valve with surface and bulk micromachining technology in polymer MEMS. This micro CSF shunt valve was formed with four micro check valves to have a membrane connected to the anchor with the four bridges. The up-down movement of the membrane made the CSF on & off and the valve characteristic such as open pressure was controlled by the thickness and shape of the bridge and the membrane. The membrane, anchor and bridge layer were made of the $O_2$ RIE (reactive ion etching) patterned Parylene thin film to be about 5~10 microns in thickness on the silicon wafer. The dimension of the rectangular nozzle is 0.2＊0.2 $\textrm{mm}^2$ and the membrane 0.45 mm in diameter. The bridge width is designed variously from 0.04 mm to 0.12 mm to control the valve characteristics. To protect the membrane and bridge in the CSF flow, we developed the packaging system for the CSF micro shunt valve with the deep RIE of the silicon wafer. Using this package, we can control the gap size between the membrane and the nozzle, and protect the bridge not to be broken in the flow. The total dimension of the assembled system is 2.5＊2.5 $\textrm{mm}^2$ in square, 0.8 mm in height. We could precisely control the burst pressure and low rate of the valve varing the design parameters, and develop the whole CSF shunt system using this polymer MEMS fabricated CSF shunt valve.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.334-340
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• 2000

This paper presents the fabrication of a micro electromagnetic flow sensor for the liquid flow rate measurement. The micro electromagnetic flow sensor has some advantages such as a simple structure, no heat generation, a rapid response and no pressure loss. The principle of the micro electromagnetic flow sensor is based on Faraday's law. If conductive fluid passes through a magnetic field, the electromotive force is generated and detected by two electrodes on the wall of the flow channel. The flow sensor consists of two permanent magnets and a silicon flow channel with two electrodes. The dimension of the flow sensor is $9\;mm\;{\times}\;9\;mm\;{\times}\;1\;mm$. The micro flow channel is mainly fabricated by anisotropic etching of two silicon wafers, and the detection electrodes are fabricated by metal evaporation process. The characteristic of the fabricated flow sensor is obtained experimentally. When the flow rates of water with the conductance of $100-200\;{\mu}S/cm$ are 9.1 ml/min and 62 ml/min, the generated electromotive forces are $261\;{\mu}V$ and 7.3 mV, respectively.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.75-78
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• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.103-108
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• 1997

Silicon field emitter arrays (FEAs) have been fabricated by a novel method employing a two-step tip etch and a spin-on-glass (SOG) etch-back process using double layered thermal/tetraethylortho-silicate (TEOS) oxides as a gate dielectric. A partial etching was performed by coating a low viscous photo resist and $O_2$ plasma ashing on order to form the double layered gate dielectric. A small gate aperture with low gate leakage current was obtained by the novel process. The hight and the end radius of the fabricated emitter was about 1.1 $\mu\textrm{m}$ and less than 100$\AA$, respectively. The anode emission current from a 256 tips array was turned-on at a gate voltage of 40 V. Also, the gate current was less than 0.1% of the anode current.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.333-337
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• 2013

This study proposes a simply fabricated micro stator for higher output power than previously reported micro stators. The stator has been fabricated by inserting enamel coil in silicon mold formed by micro etching process. The most merits of the proposed micro stator are the simple fabrication process and high output power. Previously reported micro stators have high resistance because the micro coil is fabricated by relatively thin-film-based deposition process such as sputtering and electroplating. In addition, the previously reported micro coil has many electrical contact points for forming the coil structure. These characteristics of the micro stator can lead to low performance in output power. However, the proposed micro stator adopts commercially available enamel coil without any contact point. Therefore, the enamel coil of the proposed micro stator has low junction resistance due to the good electrical quality compared with the deposited or electroplated metal coil. Power generation tests were performed and the fabricated stator can produce 5.4 mW in 4000 RPM, $1{\Omega}$ and 0.3 mm gap. The proposed micro stator can produce larger output power than the previously reported stator spite of low RPM and the larger gap between the permanent magnet and the stator.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.19-27
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• 1993

Capacitive pressure sensor for low pressure measurements has been fabricated by using $n^{+}$ epitaxial layer electrochemical etching stop and glass-to-silicon electrostatic bonding technique. The sensor had hybrid configuration of a sensor chip, which consists of sensor capacitor and reference capacitor, and two output signal detection IC chips. A fabricated sensor, with a $1.0{\times}1.0 mm^{2}$ square size and a $10{\mu}m$ thick flat diaphragm, showed a 7.1 pF zero pressure capacitance, and 5.2 % F.S, sensitivity in 10 KPa pressure range. By using a capacitance to voltage converter, the thermal zero shift of 0.051 %F.S./$^{\circ}C$ and the thermal sensitivity shift of 0.12 %F.S./$^{\circ}C$ for temperature range of $5{\sim}45^{\circ}C$ were obtained.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.10
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• pp.2187-2193
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• 2002

We present a novel method for 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a micro-actuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify the absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose contour are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator (SOI) wafer. 1mm $\times$ 1 mm, 20 $\mu$m thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspension beams and is driven by the comb electrodes. A 10 $\mu$m thick, 50 $\mu$m line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and amplitude are around 3.6 kHz and 20 $\mu$m, respectively, for a do bias of 100 V and an ac bias of 20 $V_{p-p}$ (peak-peak). Fabricated PMMA microstructure shows 15.4 $\mu$m deep, S-shaped cross section in the case of 1.6 kJ $cm^{-3}$ surface dose and GG development at 35$^{\circ}C$ for 40 minutes.