• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.305-310
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• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권11호
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• pp.575-580
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• 2001

In this paper, using $500\mum-thickness\; (100)\; silicon\; wafer,\; flat\; 65\mum-thickness$ silicon mirror plates were fabricated through dry etching and wet etching, and $45\mum-depth$ grooved driving electrodes were fabricated through UV-LIGA process. Four shapes of the driving electrode were fabricated: twenty four grooves of the $50\mum-width$, twelve grooves of the $100\mum-width$, six grooves of the $200\mum-width$, and no grooves on the driving electrode. Fabricated mirror plate size and spring size are $2400\times2400\times65\mum3\; and \;500\times10\times65\mum3,$ respectively. Mirror plate parts and driving electrodes were assembled into the scanning mirrors. Measured natural resonance frequencies were about 600Hz which have error within $\pm 2%$ to calculated value. Due to the squeeze effect in the narrow gap between the mirror plate and the driving electrode, measured resonance frequencies were reduced as raising the amplitude of the mirror plate. In a case of driving electrode without grooves, the resonance frequency was reduced largely, compared with a case of driving electrode with grooves. According to the experimental results, squeeze effect was smaller in the driving electrode with smaller-width and many grooves. Therefore, the driving electrode with smaller-width and many grooves was effective in low voltage and high speed operation.

• 한국진공학회지
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• 제7권4호
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• pp.390-396
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• 1998

헬리콘(Helicon) 플라즈마로부터 중성입자 흐름을 생성하여 높은 에너지의 이온에 의한 기판의 물리적, 전기적 손상을 방지할 수 있는 실리콘 식각공정이 연구되었다. 기판의 하부에 영구자석을 설치하여 cusp모양의 자계를 형성하므로써 이온 및 전자를 기판으로부 터 제거되도록 하였고 이러한 방법으로 완전히 제거되지 않는 이온의 제거를 위해서 기판 하부에 양의 전압을 가하여 자계나 전계에 영향을 받지 않는 중성입자 흐름을 얻을 수 있도 록 하였다. 발생시킨 자계 및 전계의 의해 기판 상부에서의 전자밀도는 자계나 전계가 가해 지지 않은 경우에 비해 약1/1,000정도로 낮아졌으며, 이온밀도 또한 약1/10정도로 감소하였 다. 이러한 공정을 통해 얻어진 실리콘의 식각속도는 $Cl_2$와 10%의 SF6를 혼합하여 사용할 때 $8.5{\times}10^{-4}$Torr의 압력에서 약100$\AA$/min이하로 매우 낮았으며 실리콘의 식각이 비등방성 을 가지며 진행될 수 있음이 보여졌다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1613-1616
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• 2007

A microgripper using thermal actuator and SU-8 polymer was designed and fabricated to manipulate cells and microparts. A chip size of a microgripper was 3 mm ${\times}$ 5 mm. The thermally actuated microgripper consisted of two couples of hot and cold arm actuators. The high thermal expansion coefficient, 52 $ppm/^{\circ}C$, of SU-8 compared to silicon and metals, allows the actuation of the microgripper. Thickness and width of SU-8 as an end-effector were 26 ${\mu}m$ and 80 ${\mu}m$, respectively. Initial gap between left jaw and right jaw was 120 ${\mu}m$. The ANSYS program as FEM tool was introduced to analyze the thermal distribution and displacement induced by thermal actuators. $XeF_2$ gas was used for isotropic silicon dry etching process to release SU-8 end-effector. Mechanical displacements of the fabricated microgripper were measured by optical microscopy in the range of input voltage from 0 V to 2.5 V. The maximum displacement between two jaws of a microgripper Type OG 1_1 was 22.4 ${\mu}m$ at 2.5 V.

• 대한의용생체공학회:의공학회지
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• 제22권2호
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• pp.145-150
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• 2001

대뇌 피질에 삽입하여 깊이에 따라 신경 신호를 기록하기 위한 탐침형 반도체 미세전극 어레이(depth-type silicon microelectrode array, 일명 SNU probe)를 제작하였다. 붕소를 확산시켜 생성된 고농도 p-type doping된 p＋ 영역을 습식식각 정지점으로 사용하는 기존의 방법과 달리 실리콘 웨이퍼의 앞면을 건식식각하여 원하는 탐침 두께만큼의 깊이로 트렌치(trench)를 형성한 후 뒷면을 습식식각하는 방법으로 탐침 형태의 미세 구조를 만들었다. 제작된 반도체 미세전극 어레이의 탐침 두께는 30 $\mu\textrm{m}$이며 실리콘 건식식각을 위한 마스크로 6 $\mu\textrm{m}$ 두께의 LTO(low temperature oxide)를 사용하였다. 탐침의 두께는 개발된 본 공정을 이용해서 5~90 $\mu\textrm{m}$ 범위까지 쉽게 조절할 수 있었다. 탐침의 두께를 보다 쉽게 조절할 수 있게 됨에 따라 여러 신경조직에 필요한 다양한 구조의 반도체 미세전극 어레이를 개발할 수 있게 되었다. 본 공정을 이용해서 개발된 4채널 SUN probe를 사용하여 흰쥐의 제1차 체감각 피질에서 4채널 신경 신호를 동시에 기록하였으며, 전기적 특성검사에서 기존의 탐침형 반도체 미세전극, 텅스텐 전극과 대등하거나 우수한 신호대 잡음비(signal to noise ratio, SNR)특성을 가짐을 확인하였다.

• 전기학회논문지
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• 제58권5호
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• pp.1004-1009
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• 2009

Recently, mass spectrometers are widely used for in-situ chemical analysis. It has rapid response and high sensitivity. In this paper, we present the fabrication and test of a cold cathode emitter for micro mass spectrometer using CNTs(Carbon nano tubes). The CNTs have good mechanical, electrical and chemical characteristics. So they have a long life time and strong robustness. The micro mass spectrometer is composed of the glass substrate and the silicon substrate. The glass substrate is constructed by electrodes for TOF(Time-of-flight) which analyze an ion with mass to charge ratio as ion separator. The silicon substrate is highly doped wafer which is patterned for gate electrode and then 100 11m dry etching to grow the CNTs as the electron emitter. The CNTs are grown by HFCVD(Hot filament chemical vapor deposition) with sputtering the catalyst. We successfully attained to grow the CNTs and to test the characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• 한국진공학회지
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• 제7권2호
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• pp.88-93
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• 1998

본 연구에서는 기계-화학적 연마(Chemical-Mechanical-Polishing: CMP)공정을 이용 하여 게이트 전극을 가지는 실리콘 전계방출 소자를 제작하였으며, 또한 그 전자방출 특성 을 분석하였다. 실리콘 전계방출 소자를 제작하기 위해 실리콘을 두단계로 이루어진 건식식 각과 산화공정으로 팁을 뾰족하게 만들었으며, 게이트를 형성하기 위하여 고 선택비를 가지 는 CMP공정을 사용하였으며, 연마 시간과 연마 압력의 변화로 게이트 높이와 개구의 직경 을 쉽게 조절할 수 있었다. 또한, CMP공정시 발생되는 디싱(dishing)문제를 산화막 마스킹 을 사용함으로 해결하여 자동 정렬된 게이트전극의 개구를 깨끗하게 형성할 수 있었다. 제 작된 에미터의 높이와 팁끝의 반경은 각각 1.1$\mu$m, 100$\AA$정도이며, 제작된 2809개의 팁 어 레이로 80V의 게이트전압에서 31$\mu$A의 방출전류를 얻을 수 있었다.

• Current Photovoltaic Research
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• 제4권3호
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• pp.119-123
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• 2016

We discussed various cover glass substrates available for photovoltaic (PV) modules, and investigated the fabrication methods of light trapping structures for the efficiency enhancement of PV modules: wet and dry etching or laser and direct patternings. We also introduced the analysis of haze at etched glass surfaces as a function of wavelength and also presented a anti-reflection coating technology for PV module.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.231-236
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• 2005

To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 $\AA$ silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( $N_{d}$, $N_{t}$, $\Phi$$_{b}$, t) which were related with grainboundary.ary.