• Korean Journal of Environmental Agriculture
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• v.36 no.4
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• pp.288-292
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• 2017

BACKGROUND: Silicon tetrachloride reacts with moisture in the atmosphere to generate hydrogen chloride, which affects the environment. Since silicon tetrachloride and its by-products are dispersed in the atmosphere in a short time after the silicon tetrachloride release into the atmosphere, it is difficult to directly assess the extent of environmental impact. In the present study, the exposure test of silicon tetrachloride or hydrogen chloride was examined in order to establish the criterion of the range affected by the silicon tetrachloride release, and the actual crops in the area exposed to silicon tetrachloride leakage were analyzed. METHODS AND RESULTS: For the experiment of exposure to silicon tetrachloride or hydrogen chloride, the leaves of red-pepper and corn were used in glass sealed containers. In the actual accident area, 59 samples from 10 different kinds of crops were collected. The pretreatment of the sample was performed by freezing and grinding, and then extracted using distilled water. The pH and concentration of chloride ($Cl^-$) ion of the extracted solution were measured using pH meter and ion chromatograph, respectively. CONCLUSION: Exposure to silicon tetrachloride caused visible damage, increasing the concentration of chloride ion, and decreasing the pH as well as hydrochloric acid. In the actual crops of the affected area, the tendency was the same as the result of the laboratory test, and the range of influence could be estimated through the concentration of $Cl^-$ ion over 2,000 mg/kg, and the correlation evaluation between the concentration of $Cl^-$ and pH. Therefore, the concentration of $Cl^-$ ion and the correlation between $Cl^-$ and pH would be considered as the factors to estimate the influence range of silicon tetrachloride release.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.804-810
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• 1997

A new catalyst system composed of a main catalyst(copper chloride) and promotors of zinc chloride, tin, and cadminum showed excellent performances in the MCS synthesis from silicon and methylchloride. The mixture of catalyst/silicon(5/95), Zn/Cu=0.1, Sn/Cu=0.001, and Cd/Cu=0.001 was mixed in a slurry phase and activated into the contact mass, then it was used for MCS synthesis. The average selectivity was 92% at the silicon consumption of 92% and reaction rate was 175(g-MCS/hr.kg-silicon) at conversion of silicon.

• Bulletin of the Korean Chemical Society
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• v.28 no.10
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• pp.1661-1664
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• 2007

Direct reaction of elemental silicon with a gaseous mixture of isopropyl chloride (1) and hydrogen chloride in the presence of copper catalyst using a stirred bed reactor equipped with a spiral band agitator gave isopropyldichlorosilane having a Si-H bond (2a) as a major product and isopropyltrichlorosilane (2b) along with chlorosilanes, trichlorosilane and tetrachlorosilane. A process for production of 2a was maximized using the 1:0.5 mole ratio of 1 to HCl and smaller size of elemental silicon at a reaction temperature of 220 °C. When a reaction was carried out by feeding a gaseous mixture of 1 [12.9 g/h (0.164 mol/h)] and HCl [2.98 g/h (0.082 mol/h)] to a contact mixture of elemental silicon (360 g) and copper (40 g) under the optimum condition for 45 h, 2a among volatile products kept up about 82 mol % until 35 h and then slowly decreased down 68 mol % in 45 h reaction. Finally 2a was obtained in 38% isolated yield (based on 1 used) with an 85% consumption of elemental silicon in a 45 h reaction. In addition to 2a, 2b was obtained as minor product along with chlorosilanes, trichlorosilane, and tetrachlorosilane. The decomposition of 1 was suppressed and the production of 2a improved by adding HCl to 1.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.959-968
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• 2000

Direct reaction of elemental silicon with a mixture of (dichloromethyl)silanes 1 $[Cl_3-nMenSiCHCl_2:$ n = 0 (a), n = 1(b), n = 2(c), n = 3(d)] and hydrogen chloride has been studied in the presence of copper catalyst using a stirred bed reactor equ ipped with a spiral band agitator at various temperatures from $240^{\circ}C$ to $340^{\circ}C.$ Tris(si-lyl) methanes with Si-H bonds, 3a-d $[Cl_3-nMenSiCH(SiHCl_2)_2]$, and 4a-d $[Cl_3-nMenSiCH(SiHCl_2)(SiCl_3)]$, were obtained as the major products and tris(silyl)methanes having no Si-H bond, 5a-d $[Cl_3-nMenSiCH(SiCl_3)_2]$, as the minor product along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with chloromethylsilane formed by the decomposition of 1. In addition to those products, trichlorosilane and tetra-chlorosilane were produced by the reaction of elemental silicon with hydrogen chloride. The decomposition of 1 was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to 1. Cad-mium was a good promoter for and the optimum temperature for this direct synthesis was $280^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• Journal of radiological science and technology
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• v.41 no.1
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• pp.33-38
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• 2018

There are limits to check the lesion as inserting a breast implant patients. So the application of BSGI based on Nuclear Medicine examination has increased. In this study, therefore we confirmed the effect of the image applying to breast implants in Breast Specific Gamma Imaging. We utilized Dilon 6800 BSGI scanner and developed the phantom. The self-development phantom was a rectangular shape of $230{\times}190{\times}80mm$ size and had 5 spheres which consisted of diameters of 10, 13, 17, 22, 28 mm in central part. We injected $^{99m}TcO_4$ into the self-development phantom in the proportion of four to one and made each additional phantom filled with 0.9 % sodium chloride, silicon and paraffin. Each additional phantom was placed between detector and self-development phantom. Each image was acquired five times depending on the type and thickness of the additional phantom. Statistical analysis with SPSS ver.18 was applied. In the test of variation according to the thickness of all additional phantoms, as the phantoms which 0.9% sodium chloride, silicon and paraffin increased, the attenuation variation was higher(P<0.005). There was no significant difference in the attenuation variation and the quality of image for type of the additional phantom. Therefore, if the effect of the image applying to breast implants in Breast Specific Gamma Imaging is confirmed, the higher diagnostic value can be achieved.

• Resources Recycling
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• v.21 no.5
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• pp.31-37
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• 2012

As a recovery of elemental silicon from the sludge of Si wafer process, a process of mechanical separation-chlorine roasting-electrolysis has been suggested. The silicon sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by mechanical separation. The Si-SiC mixture was converted to silicon chloride by chlorine roasting at $1000^{\circ}C$ for 1 hr and the silicon chloride was dissolved into an ionic liquid of $[Bmpy]Tf_2N$ as an electrolyte. Cyclic voltammetry results showed an wide voltage window of pure $[Bmpy]Tf_2N$ and a reduction peak of elemental Si from $[Bmpy]Tf_2N$ dissolved $SiCl_4$ on Au electrode, respectively. The silicon deposits could be prepared on the Au electrode by the potentiostatic electrolysis of -1.9 V vs. Pt-QRE. The elemental silicon uniformly electrodeposited was confirmed by various analytical techniques including XRD, FE-SEM with EDS, and XPS. Any impurity was not detected except trace oxygen contaminated during handling for analysis.

• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.683-686
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• 2009

Slurry phase reaction of elemental silicon with methanol has been studied in the presence of copper using a small amount of cuprous chloride as an activator in DBT (dibenzyltoluene) at various temperatures from 200 ${^{\circ}C}$ to 320 ${^{\circ}C}$. Trimethoxysilane (1a) with a Si-H unit was obtained as the major product and tetramethoxysilane (1b) as the minor product. The reaction worked well using a 0.5 wt % CuCl as an activator. The optimum temperature for this direct synthesis of 1a was 240 ${^{\circ}C}$. Methoxysilanes were obtained in 95% yield with 81% selectivity to 1a from 85% conversion of elemental silicon.

• Journal of the Korean Solar Energy Society
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• v.33 no.5
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• pp.24-33
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• 2013

Renewable energy industries, including sola cell plants, has been ever increasing ones for reducing fossil fuel consumption and strengthening national energy policy. In this paper we tried to identify occupational health hazards in solar cell-related industries operated in Korea. Poly silicon, silicon ingot and wafer, solar cell and module are major processes for producing solar cells. Poly silicon operations may cause hazards to workers from metal silicon, silanes, silicon, hydro fluoric acid and nitric acid. Solar cells could not be constructed without using metals such as aluminum and silver, acids such as hydrofluoric acid and nitric acid, bases such as sodium hydroxide and potassium hydroxide, and solvent and phosphorus chloride oxide. Workers in module assembly process may exposed to isopropanol, flux, solders that contain lead, tin and/or copper. To prevent occupational exposure to these hazards, it is essential to identify the hazards in each process and educate workers in industries with proper engineering and administrative control measures.