• 한국세라믹학회지
• /
• 제45권9호
• /
• pp.518-523
• /
• 2008

The mechanical properties of silicon carbide deposited by chemical vapor deposition process onto a graphite substrate are studied using nanoindentation techniques. The silicon carbide coating was fabricated in a chemical vapor deposition process with different microstructures and thicknesses. A nanoindentation technique is preferred because it provides a reliable means to measure the mechanical properties with continuous load-displacement recording. Thus, a detailed nanoindentation study of silicon carbide coatings on graphite structures was conducted using a specialized specimen preparation technique. The mechanical properties of the modulus, hardness and toughness were characterized. Silicon carbide deposited at $1300^{\circ}C$ has the following values: E=316 GPa, H=29 GPa, and $K_c$=9.8 MPa $m^{1/2}$; additionally, silicon carbide deposited at $1350^{\circ}C$ shows E=283 GPa, H=23 GPa, and $K_c$=6.1 MPa $m^{1/2}$. The mechanical properties of two grades of SiC coating with different microstructures and thicknesses are discussed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권2호
• /
• pp.78-81
• /
• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• 한국세라믹학회지
• /
• 제37권3호
• /
• pp.247-255
• /
• 2000

Silicon carbide with sialon was prepared by hot pressing and transient liquid-phase sintering, and the effects of sintering atmosphere and starting phases on their microstructural characteristics were investigated. The sintered SiC with Sialon composition(Y2O3, AlN, Si3N4) in argon atmosphere had high sintered density and large aspect ratio. But sintered specimens in nitrogen atmosphere showed low aspect ratio and small grian size, becuase of the retardation of phase transformation and grain growth. Addition of Y-Sialon powder to SiC also retarded the phase transformation to ${\alpha}$-SiC from ${\beta}$-SiC and densification. The SiC specimen prepared from the starting ${\beta}$-SiC powder with Sialon composition(Y2O3, AlN, Si3N4) showed the highest fracture toughness about 6.0 MPa$.$m1/2.

• Carbon letters
• /
• 제15권3호
• /
• pp.180-186
• /
• 2014

This study highlights a novel method and mechanism for the rapid and effective milling of carbon fibers (CFs) in silicon carbide (SiC) powder, and also the dispersion of CFs in SiC powder. The composite powders were prepared by chopping and exfoliation of CFs, and ball milling of CFs and SiC powder in isopropyl alcohol. A wide range of CFs loading, from 10 to 50 vol%, was studied. The milling of CFs and SiC powder was checked by measuring the average particle size of the composite powders. The dispersivity of CFs in SiC powder was checked through scanning electron microscope. The results show that the usage of exfoliated CF tows resulted in a rapid and effective milling of CFs and SiC powder. The results further show an excellent dispersion of CFs in SiC powder for all CFs loading without any dispersing agent.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 춘계학술발표대회
• /
• pp.53.1-53.1
• /
• 2009

실리콘 다층박막 태양전지를 위한 초고효율 실리콘 양자점 박막을 연구하기 위해 Silicon target과 Carbon target을 동시에 스퍼터하여 Silicon Carbide 박막을 증착하였다. Silicon Carbide 박막의 조성비는 target에 인가되는 RF Power를 조절하여 Auger Electro Spectroscopy를 사용하여 Si, C, O, N원소의 양을 정량화하여 측정하였다. Si Power를 200W에 고정하고, C Power를 0W에서 400W까지 변화시킬 때, $Si_{1-x}$ $C_x$ 박막에서 조성비 x는 0 ~ 0.43 범위였다. 이 박막을 증착 한 후에 질소 분위기에서 600 ~ $1000^{\circ}C$ 온도로 열처리를 진행하였다. High resolution TEM과 Raman 분석을 통해, 박막의 열처리 후 $Si_{1-x}$ $C_x$ 박막 내에 실리콘 양자점이 형성되었음을 관찰할 수 있었고, 2 ~ 10 nm 의 크기를 가지는 것으로 확인할 수 있었다. 이 실리콘 양자점을 포함한 $Si_{1-x}$ $C_x$ 박막을 적층하여 UV-VIS-NIR spectroscopy, FTIR및 PL와 같은 측정을 통해 광학적 에너지 밴드갭의 변화와 그에 따른 특성을 확인하였다.

• 한국세라믹학회지
• /
• 제46권5호
• /
• pp.534-539
• /
• 2009

Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

• Korean Chemical Engineering Research
• /
• 제61권1호
• /
• pp.32-38
• /
• 2023

본 연구에서는 리튬 이온 배터리 용 음극활물질인 실리콘의 사이클 안정성 및 율속 특성을 개선하기 위해 도파민이 코팅된 실리콘/실리콘카바이드/카본(Si/SiC/C) 복합소재의 전기화학적 특성을 조사하였다. Stöber 법에 CTAB을 추가하여 CTAB/SiO₂를 합성한 후 열 흡수제로써 NaCl을 첨가한 마그네슘 열 환원법을 통해 Si/SiC 복합소재를 제조하였으며, 도파민의 중합반응을 통해 탄소코팅을 하여 Si/SiC/C 음극소재를 합성하였다. 제조된 Si/SiC/C 음극소재의 물리적 특성 분석을 위해 SEM, TEM, XRD와 BET를 사용하였으며, 1 M LiPF₆ (EC : DEC = 1 : 1 vol%) 전해액에서 리튬 이온 배터리의 사이클 안정성, 율속 특성, 순환전압전류 및 임피던스 테스트를 통해 전기화학적 특성을 조사하였다. 제조된 1-Si/SiC는 100사이클, 0.1 C에서 633 mAh/g의 방전용량을 나타냈으며, 도파민이 코팅된 1-Si/SiC/C는 877 mAh/g으로 사이클 안정성이 향상된 것을 확인할 수 있었다. 또한 5C에서 576 mAh/g의 높은 용량과 0.1 C/0.1 C 일 때 99.9%의 용량 회복 성능을 나타내었다.

• 한국세라믹학회지
• /
• 제53권3호
• /
• pp.349-353
• /
• 2016

We prepared a number of reaction-bonded silicon carbides (RBSCs) made from various mixing ratios of raw SiC particles, and investigated their microstructure and etch characteristics by Reactive Ion Etch (RIE). Increasing the amount of $9.5{\mu}m$-SiC particles results in a microstructure with relatively coarser Si regions. On the other hand, increasing that of $2.6{\mu}m$-SiC particles produces much finer Si regions. The addition of more than 50 wt% of $2.6{\mu}m$-SiC particles, however, causes the microstructure to become partially coarse. We also evaluated their etching behaviors in terms of surface roughness (Ra), density and weight changes, and microstructure development by employing Confocal Laser Scanning Microscope (CLSM) and Scanning Electron Microscope (SEM) techniques. During the etching process of the prepared samples, we confirmed that the residual Si region was rapidly removed and formed pits isolating SiC particles as islands. This leads to more intensified ion field on the SiC islands, and causes physical corrosion on them. Increased addition of $2.6{\mu}m$-SiC particles produces finer residual Si region, and thus decreases the surface roughness (Ra.) as well as causing weight loss after etching process by following the above etching mechanism.

• 한국표면공학회지
• /
• 제43권1호
• /
• pp.36-40
• /
• 2010

The SiO vapor that was generated from a mixture of Si and $SiO_2$ was reacted at $1350^{\circ}C$ for 2 h under vacuum with carbon nanofibers to produce SiC nanofibers having an average diameter of 100~200 nm. In order to understand the gas corrosion behavior, SiC nanofibers were exposed to air up to $1000^{\circ}C$. SiC oxidized to amorphous $SiO_2$, but its oxidation resistance was inferior unlike bulk SiC, because of high surface area of nanofibers. When SiC nanofibers were exposed to Ar-1% $SO_2$ atmosphere, SiC oxidized to amorphous $SiO_2$, without forming $SiS_2$, owing to the thermodynamic stability of $SiO_2$.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 1998년도 제27회 춘계학술대회
• /
• pp.139-145
• /
• 1998

This paper addresses the R-curve properties, wear resistance, and erosion resistance of the two silicon carbide ceramics with different microstructures, i.e. , fine grained SiC and in situ-toughened SiC(IST SIC). Fine grained SiC exhibits a relatively flat R-curve behavior whereas the IST SiC exhibits a increasing R-curve behavior. The increasing R-curve behavior in IST SiC is attributed to relatively weak grain boundaries. The rate of material removal during wear tests and erosion tests was higher for IST SiC than that for fine grained SiC. This is attributed to the weaker grain boundaries in IST SiC than that in fine grained SiC. It is implied that fracture toughness in short crack regime should be taken into consideration in the interpretation of the microscopical material removal process. We show that the higher the strength of grain boundaries is, the higher wear and erosion resistances are.