• Title/Summary/Keyword: Silicon Solar Cells

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Sulfur Defect-induced n-type MoS2 Thin Films for Silicon Solar Cell Applications (실리콘 태양전지 응용을 위한 황 결핍 n형 MoS2 층 연구)

  • Inseung Lee;Keunjoo Kim
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.3
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    • pp.46-51
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    • 2023
  • We investigated the MoS2 thin film layer by thermolytic deposition and applied it to the silicon solar cells. MoS2 thin films were made by two methods of dipping and spin coating of (NH4)2MoS4 precursor solution. We implemented two types of substrates of microtextured and nano-microtextured 6-in. Si pn junction wafers. The fabricated MoS2 thin film layer was analyzed, and solar cells were fabricated by applying the standard silicon solar cell process. The MoS2 thin film layer of sulfur-deficient form was deposited on the n-type emitter layer, and electrons, which are minority carriers, were well transported at the interface and exhibited photovoltaic solar cell characteristics. The cell efficiencies were achieved at 5% for microtextured wafers and 2.56% for nano-microtextured wafers.

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Characteristics of Mono Crystalline Silicon Solar Cell for Rear Electrode with Aluminum and Aluminum-Boron (Aluminum 및 Aluminum-Boron후면 전극에 따른 단결정 실리콘 태양전지 특성)

  • Hong, Ji-Hwa;Baek, Tae-Hyeon;Kim, Jin-Kuk;Choi, Sung-Jin;Kim, Nam-Soo;Kang, Gi-Hwan;Yu, Gwon-Jong;Song, Hee-Eun
    • 한국태양에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.34-39
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    • 2011
  • Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

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Development of textured ZnO:Al films for silicon thin film solar cells (실리콘 박막 태양전지용 텍스처링 ZnO:Al 박막 개발)

  • Cho, Jun-Sik;Kim, Young-Jin;Lee, Jeong-Chul;Park, Sang-Hyun;Song, Jin-Soo;Yoon, Kyoung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.349-349
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    • 2009
  • High quality ZnO:Al films were prepared on glass substrates by in-line RF magnetron sputtering and their surface morphologies were modified by wet-etching process in dilute acid solution to improve optical properties for application to silicon thin film solar cells as front electrode. The as-deposited films show a strong preferred orientation in [001] direction under our experimental conditions. A low resistivity below $5{\times}10^{-4}{\Omega}{\cdot}cm$ and high optical transmittance above 80% in a visible range are achieved in the films deposited at optimized conditions. After wet-etching, the surface morphologies of the films are changed dramatically depending on the deposition conditions, especially working pressure. The optical properties such as total/diffuse transmittance, haze and angular resolved distribution of light are varied significantly with the surface morphology feature, whereas the electrical properties are seldom changed. The cell performances of silicon thin film solar cells fabricated on the textured films are also evaluated in detail with comparison of commercial $SnO_2$:F films.

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A Study on Silicon Nitride Films by high frequency PECVD for Crystalline Silicon Solar Cells (결정질 실리콘 태양전지를 위한 고주파 PECVD SiNx막 연구)

  • Kim, Jeong-Hwan;Roh, Si-Cheol;Choi, Jeong-Ho;Jung, Jong-Dae;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.7-11
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    • 2012
  • SiNx films have been wildly used as anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, the SiNx films were deposited by using high frequency (13.56MHz) PECVD and optical & passivation properties were investigated. The RF power was changed in a certain range for the film deposition. Then, the refractive index, etch rate, minority carrier lifetime and cell efficiency were measured to study the properties of the film respectively. The optimal deposition conditions for application to crystalline silicon solar cells were proposed as results of the study. Finally, the best cell efficiency of 16.98% was obtained from the solar cell with the SiNx films deposited by RF power of 550W.

Low-cost Contact formation of High-Efficiency Crystalline Silicon Solar Cells by Plating

  • Kim D. S.;Lee E. J.;Kim J.;Lee S. H.
    • New & Renewable Energy
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    • v.1 no.1 s.1
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    • pp.37-43
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    • 2005
  • High-efficiency silicon solar cells have potential applications on mobile electronics and electrical vehicles. The fabrication processes of the high efficiency cells necessitate com placated fabrication precesses and expensive materials. Ti/Pd/Ag metal contact has been used only for limited area In spite of good stability and low contact resistance because of Its expensive material cost and precesses. Screen printed contact formed by Ag paste causes a low fill factor and a high shading loss of commercial solar cells because of high contact resistance and a low aspect ratio. Low cost Ni/Cu metal contact has been formed by using a low cost electroless and electroplating. Nickel silicide formation at the interface enhances stability and reduces the contact resistance resulting In an energy conversion efficiency of $20.2\%\;on\;0.50{\Omega}cm$ FZ wafer. Tapered contact structure has been applied to large area solar cells with $6.7\times6.7cm^2$ in order to reduce power losses by the front contact The tapered front metal contact Is easily formed by the electroplating technique producing $45cm^2$ solar cells with an efficiency of $21.4\%$ on $21.4\%\;on\;2{\Omega}cm$ FZ wafer.

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The Study on the Characteristic of Mono Crystalline Silicon Solar Cell with Change of $O_2$ Injection during Drive-in Process and PSG Removal (단결정 실리콘 태양전지 도핑 확산 공정에서 주입되는 $O_2$ 가스와 PSG 유무에 따른 특성 변화)

  • Choi, Sung-Jin;Song, Hee-Eun;Yu, Gwon-Jong;Lee, Hi-Deok
    • 한국태양에너지학회:학술대회논문집
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    • 2011.04a
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    • pp.105-110
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    • 2011
  • The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.

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Applying 40 Inventive Principles for the Efficiency Improvement of Solar Cells (태양전지의 효율 향상을 위한 40 발명원리의 적용에 관한 연구)

  • Jeong, Hai Sung
    • Journal of Applied Reliability
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    • v.14 no.4
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    • pp.256-261
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    • 2014
  • Solar cells are considered ideal as a clean energy to generate electricity. However, silicon-based photoelectric cells show some shortcomings in efficiency, cost and reliability. This has been a barrier to further commercialization. This paper shows how 40 Inventive Principles can be used in the research and development on the solar cells to improve efficiency, cost and reliability.

A Computer Model for Polycrystalline Silicon $n^+$ -p Solar Cells (다결정 실리콘 $n^+$ -p 태양전지의 Computer Model)

  • 정호선
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.18 no.6
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    • pp.30-37
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    • 1981
  • Numerical calculations have beee made of the effect of grain size on the three-dimensional carrier density, the quantum efficiency, and the AMI efficiency of 30$\mu$m polycrystalliue silicon p-n junction solar cells. Quantum efficiencies calculated for the polycrystalline silicon solar cells are compared to the monocrystalline cases. An efficiency of 12% can theoretically be obtained with grain size 100$\mu$m, and 6% for 5$\mu$m grains.

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Effect of Silver Nanoparticles with Indium Tin Oxide Thin Layers on Silicon Solar Cells

  • Oh, Gyujin;Kim, Eun Kyu
    • Applied Science and Convergence Technology
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    • v.26 no.4
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    • pp.91-94
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    • 2017
  • AThe effect of localized surface plasmon on silicon substrates was studied using silver nanoparticles. The nanoparticles were formed by self-arrangement through the surface energy using rapid thermal annealing (RTA) technique after the thin nanolayer of silver was deposited by thermal evaporation. By the theoretical calculation based on Mie scattering and dielectric function of air, indium tin oxide (ITO), and silver, the strong peak of scattering cross section of silver nanoparticles was found at 358 nm for air, and 460 nm for ITO, respectively. Accordingly, the strong suppression of reflectance under the condition of induced light of $30^{\circ}$ occurred at the specific wavelength which is almost in accordance with peak of scattering cross section. When the external quantum efficiency was measured using silicon solar cells with silver nanoparticles, there was small enhancement peak near the 460 nm wavelength in which the light was resonated between silver nanoparticles and ITO.

Improving Device Efficiency for n-i-p Type Solar Cells with Various Optimized Active Layers

  • Iftiquar, Sk Md;Yi, Junsin
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.70-73
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    • 2017
  • We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.