• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.18-20
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• 2016

The study of superconducting fault current limiter (SFCL) is continuously being studied as a countermeasure for reducing fault-current in the power system. When the fault occurred in the power system, the fault-current was limited by the generated impedance of SFCLs. The operational characteristics of the flux-offset type SFCL according to turn ratios between the primary and the secondary winding of a reactor were compared in this study. We connected the secondary core to a superconductor and a SCR switch in series in the suggested structure. The fault current in the primary and the secondary winding of the reactor and the voltage of the superconductor on the secondary were measured and compared. The results showed that the fault current in the load line was the lowest and the voltage applied at both ends of the superconductor was also low when the secondary winding of the reactor had lower turn ratio than the primary. It was confirmed based on these results that the turn ratio of the secondary winding of the reactor must be designed to be lower than that of the primary winding to reduce the burden of the superconductor and to lower the fault current. Also, the suggested structure could increase the duration of the limited current by limiting the continuous current after the first half cycle from the fault with the fault current limiter.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.4
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• pp.348-352
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• 2016

This paper addresses the efficient improvement of the Switched Reluctance Motor(SRM) by the proper voltage excitation. In the case of loads with large operational motor-speed differences such as washing machine, an SRM system driven by a constant DC-link voltage is not useful for improving the efficiency. To reduce the effect of the excess DC-link voltage, AC-DC control converter that uses a silicon controlled rectifier instead of diode rectifier is employed in the SRM driver system. AC-DC control converter supplies a proper link voltage for low-speed operation. The experimental results demonstrated that the efficiency of the system was improved at low speeds.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.339-344
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• 2014

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

• Journal of Power Electronics
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• v.12 no.6
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• pp.947-953
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• 2012

The latch-up immunity of the high voltage power clamps used in high voltage ESD protection devices is very becoming important in high-voltage applications. In this paper, a stacking structure with a high holding voltage and a high failure current is proposed and successfully verified in 0.18um CMOS and 0.35um BCD technology to achieve the desired holding voltage and the acceptable failure current. The experimental results show that the holding voltage of the stacking structure can be larger than the operation voltage of high-voltage applications. Changes in the characteristics of the stacking structure under high temperature conditions (300K-500K) are also investigated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2230-2236
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• 2012

Currently, the AC-to-DC power conversion system using diode rectifiers is mainly used in large vessels. Also, to reduce the total harmonic distortion(THD) of current and voltage, this system requires an additional phase-shifting transformer which can be powered multi-pulses. In this case, due to the installation of the transformer, the spatial or economic loss occurs. This paper presents a novel active rectification scheme using silicon controlled rectifier(SCR) or insulated gate bipolar transistor(IGBT) devices on behalf of the diode rectifiers which are currently operating in large vessels such as LNG Carrier(LNGC). The proposed system can use the low voltage source and reduce current and voltage harmonics generated by nonlinear loads connected to the power distribution bus and save economic costs by removing the phase-shifting transformers which are used in conventional system. Computer simulations are performed under the electric propulsion system which is operating in current large vessel. The results are shown in support of the improvement of THD included in the current and voltage wave forms of propulsion motor.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.9
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• pp.1313-1317
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• 2013

With increasing demand of power, the equipment of power system is enlarging and the absolute capacity is going up. As a result, when a fault occurs, the fault current is consistently increasing. Therefore, I suggested some solution for limiting the fault current more efficiently. This study shows the characteristics of superconducting limiting elements and normal conducting elements combined with a transformer. We performed a short-circuit test about the fault current by using SCR switching control system operated from a CT. When short circuit accidents happened in the secondary side of a transformer, fault currents flowed and a SCR switching control system was operated. It resulted in a decrease of the fault current in the limited elements of third winding connected in parallel. For this test, we used YBCO thin films and normal conducting elements as the limited elements. Within a cycle, a superconducting fault current limiter with YBCO thin films reduced more than 90% of fault current because the resistance of superconducting elements sustainedly grew. On the other hand, the limiter with normal conductors limited as much as a set value because its resistance characteristic was linear. Consequently, in case of the limiter with superconductor, limiting range of the circuit was wide but the range of protective detection was undefined. In contrast, as for the limiter with normal conductors, limiting range and protection duty were appropriate.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.4
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• pp.169-176
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• 2017

This paper presents research on low-voltage microgrids to maintain a continuous power supply to critical loads on grid-connected islands in Korea. The low-voltage microgrids of this paper focused on that changes public office buildings into uninterrupted microgrids by autonomous operation. For this, a microgrid controller (MGC) and a power conditioning system (PCS) that allow a seamless transfer between grid-connected and grid-isolated operation are proposed. The proposed PCS operates with a silicon controlled rectifier (SCR) switch and employs a simple structure. It supplies power continuously without operators through a coordinated operation between MGC and PCS. In addition, proposed MG has a schedule operation for minimizing electricity charges and provides ancillary services that enable the utilization of resources according to the operation purpose of utility distribution networks. To demonstrate the uninterrupted low-voltage microgrid proposed in this study, a microgrid was implemented and tested in a public office building in Anjwa Island, Jeollanam-do in Korea. A seamless, autonomous operation history, despite system disturbances, was obtained through a long-term demonstration of operation. The results showed that the proposed microgrid technology can be used to achieve energy resilience in grid-connected island areas.

• ETRI Journal
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• v.38 no.2
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• pp.272-279
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• 2016

In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR-based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch-up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit - (i) an AHHVSCR-based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR-based ESD protection circuit, and (iii) a standard HHVSCR-based ESD protection circuit. A circuit having the proposed new structure is fabricated using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology. The fabricated circuit is also evaluated using Transmission-Line Pulse measurements to confirm its electrical characteristics, and human-body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1743-1747
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• 2012

The research of superconducting fault current limiter (SFCL) for reduction of the fault current is actively underway in the worldwide. In this paper, we analyzed the characteristics of a SFCL using the transformer and superconducting elements combined mutually in accordance with the fault types. The structure of this SFCL was composed of the secondary and third windings of a transformer connected to the load and the superconducting element, respectively. The provided electric power flew into the load connected to the secondary winding of the transformer in normal state. On the other hand, when the fault occurred in power system, the fault current was limited by closing the line of third winding of the transformer. At this time, the effect of the fault was minimized by opening the fault line in secondary winding of a transformer in power system. The sensing of the fault state was performed by the current transformer(CT) and then turn-on and turn-off switching behavior of the secondary line in the transformer was performed by the silicon-controlled rectifier(SCR). As a result, the proposed SFCL limited the fault current within one-cycle efficiently. Also, the degradation of the superconducting element in the normal state was avoided.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.178-179
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• 2005

ESD(Electrostatic Discharge) 보호에 응용되는 소자는 ESD가 발생했을 때, 빠르게 턴-온되어 외부로부터 EOS(Electric OverStress)를 차단함으로서 집적회로 내부의 코어를 보호해 주어야 한다. 이러한 기능에 충실한 LVTSCR(Low-Voltage Silicon Controlled Rectifier)은 트리거링 전압을 기존의 SCR보다 낮추어 ESD에 대해 민감한 반응을 할 수 있도록 개선한 소자이다. 그러나 트리거링 전압을 낮추면서 래치업 전압 또한 낮아지는 특성이 trade-off 관계로 맞물려 있어, LVTSCR의 단점인 낮은 래치업 전압을 효과적으로 다루는 것이 큰 이슈가 되고 있다. 본 논문에서는 LVTSCR의 ESD 보호에 대한 응용시 발생 가능한 래치업을 차폐하는 회로적 방법을 제시하였다. 제시된 새로운 구조의 차폐회로는 LVTSCR에서 래치업이 발생했을 때, 천이 전류를 감지하여 래치업이 발생되는 소자에 대한 전원을 스스로 차폐시켜 래치업에 대한 안정성을 시뮬레이션으로 검증하였다.