• ETRI Journal
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• 제31권6호
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.77-81
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• 2020

Silicon wafer etching in micro electro mechanical systems (MEMS) fabrication is challenging to form 3-D structures. Well known Si-wet etch of silicon employs potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). However, the existing silicon wet etching process has a fatal disadvantage that etching of the back side of the wafer is hard to avoid. In this study, a wet etching bath for 150 mm wafers was designed to prevent back-side etching of silicon wafer, and we demonstrated the optimized process recipe to have anisotropic wet etching of silicon wafer without any damage on the backside. We also presented the design of wet bath for 300 mm wafer processing as a promising process development.

• 통합자연과학논문집
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• 제14권4호
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• pp.147-154
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• 2021

A luminescent porous silicon sensor, whose surface was passivated with organic molecule via hydrosilylation under various conditions, has been researched to measure the photoluminescence (PL) stability of porous silicon (PSi). Photoluminescent PSi were synthesized by an electrochemical etching of n-type silicon wafer under the illumination with a 300 W tungsten filament bulb during the etching process. The PL of PSi displayed at 650 nm, which is due to the quantum confinement of silicon quantum dots in the PSi. To stabilized the photoluminescence of PSi, the hydrosilylation of PSi with silole molecule containg vinyl group was performed. Surface morphologies of fresh PSi and surface-modified PSi were obtained with a cold FE-SEM. Optical characterization of red photoluminescent silicon quantum dots was investigated by UV-vis and fluorescence spectrometer.

• 한국산학기술학회논문지
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• 제8권5호
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• pp.1013-1019
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• 2007

[ $150^{\circ}C$ ]의 저온에서 플라즈마 화학기상증착 (PECVD) 방법으로 비정질 규소 및 질화규소 박막을 성막 하였다. 비정질 질화규소 박막은 소스 가스의 수소 분율을 증가시킴에 따라 굴절률이 1.9에 접근하고 질소-수소 결합이 주도적이 되어 고온성막한 박막에 버금가는 특성을 보였다. 비정질 규소 박막은 소스 가스의 수소 분율을 높임에 따라 굴절률과 광학적 금지대역의 크기가 고온 성막된 박막의 값인 4.2와 1.8 eV에 근접한 값을 가지게 되었으며, $[Si-H]/([Si-H]+[Si-H_2])$의 값이 증가하여 양질의 박막특성을 얻을 수 있었다. RF 전력 및 증착 압력에 대해서 낮은 전력과 작은 압력에서 양질의 박막을 얻을 수 있었으며, 박막 특성은 RF 전력 보다는 증착 압력의 변화에 대해서 좀더 큰 의존성을 보였다. 박막트랜지스터 제작에 적용 가능한 양질의 비정질 규소 및 질화규소 박막을 저온에서 얻기 위해서는 소스 가스의 수소 분율을 높게 하는 것이 중요한 공통 인자로 파악되었다.

• Tribology and Lubricants
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• 제11권4호
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• pp.21-27
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• 1995

The effects of interface boundary strength on wear and wear transition during sliding have been investigated in silicon carbide ceramics. Three different microstructures, i.e., solid state sintered silicon carbide, liquid phase sintered silicon carbide and liquid phase sintered silicon carbide composite reinforced with TiB$_{2}$ particulates, were designed by hot pressing. Examinations of crack patterns and fracture modes indicated that interface boundaries were relatively strong between silicon carbide grains in the solid state sintered silicon carbide, intermediate in the liquid phase sintered silicon carbide and weak between silicon carbide grains and TiB$_{2}$ particles in the composite. Wear data and examinations of worn surfaces revealed that the wear behavior of these silicon carbide ceramics could be significantly affected by the interface strength. In the solid state sintered silicon carbide, the wear occurred by a grooving process. In the liquid phase sintered silicon carbide and composite, on the other hand, an abrupt transition in wear mechanism from initial grooving to grain pull-out process occurred during the test. The transition occurred significantly earlier in the composite than in the carbide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.118-119
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• 2009

This paper presents the feature profile evolution silicon deep trench etching, which is very crucial for the commercial wafer process application. The silicon deep trenches were etched with the SF6 gas & Hbr gas based process recipe. The optimized silicon deep trench process resulted in vertical profiles (87o~90o) with loading effect of < 1%. The process recipes were developed for the silicon deep trench etching applications. This scheme provides vertically profiles without notching of top corner was observed. In this study, the production of SF6 gas based silicon deep trench etch process much more strongly than expected on the basis of Hbr gas trench process that have been investigated by scanning electron microscope (SEM). Based on the test results, it is concluded that the silicon deep trench etching shows the sufficient profile for practical MOS FET silicon deep trench technology process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.147-151
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• 2000

This paper presents the electrochemical etch-stop characteristics of single-crystal silicon in a tetramethyl ammonium hyciroxide(TMAH):isopropyl alcohol(IPA):pyrazine solution. Addition of pyrazine to a TMAH:IPA etchant increases the etch-rate of (100) silicon, thus the elapsed time for etch-stop was shortened. The current-voltage(I-V) characteristics of n- and p-type silicon in a TMAH:IPA:pyrazine solution were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type silicon, respectively, were obtained and applied potential was selected between n- and p-type silicon PP. The electrochemical etch-stop is applied to the fabrication of 801 microdiaphragms having $20\;{\mu}m$ thickness on a 5-inch silicon wafer. The averge thicknesses of 801 microdiaphragms fabricated on the one wafer were $20.03\;{\mu}m$ and standard deviation was ${\pm}0.26{\mu}m$. The silicon surface of the etch-stopped microdiaphragm was extremely flat without noticeable taper or other nonuniformities. The benefits of the electrochemical etch-stop in a TMAH:IPA:pyrazine solution become apparent when reproducibility in the microdiaphragm thickness for mass production is considered. These results indicate that the electrochemical etch-stop in a TMAH:IPA:pyrazine solution provides a powerful and versatile alternative process for fabricating high-yield silicon microdiaphragms.

• 한국결정성장학회지
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• 제8권2호
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• pp.299-306
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• 1998

비정질 규소가 결정질로 되기 위해서는 활성화가 필요하다. 이 활성화는 레이저 및 로내에서의 열처리로 열에너지를 가하면 달성될 수 있다. 이때 이 열에너지 외에 기계적 에너지 등을 가하면 활성화에 도움이 될 수 있을 것이다. 본 연구에서는 습식연마와 자기이온주입 등의 방법으로 기계적 손상을 주어서 이것이 LPCVD로 증착된 비정질 규소 박막의 결정화에 미치는 영향을 조사하였다. 결정성 확인을 위해서는 XRD와 라만분석법을 사용하였다. 본 연구의 결과, 기계적 손상이 비정질 규소 박막의 결정화를 증진시키는 것을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제29권10호
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• pp.1965-1968
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• 2008

The effects of carbon-coated silicon/graphite (Si/Gr.) composite anode on the electrochemical properties were investigated. The nanosized silicon particle shows a good cycling performance with a reasonable value of the first reversible capacity as compared with microsized silicon particle. The carbon-coated silicon/graphite composite powders have been prepared by pyrolysis method under argon/10 wt% propylene gas flow at $700{^{\circ}C}$ for 7 h. Transmission electron microscopy (TEM) analysis indicates that the carbon layer thickness of 5 nm was coated uniformly onto the surface silicon powder. It is confirmed that the insertion of lithium ions change the crystalline silicon phase into the amorphous phase by X-ray diffraction (XRD) analysis. The carbon-coated composite silicon/graphite anode shows excellent cycling performance with a reversible value of 700 mAh/g. The superior electrochemical characteristics are attributed to the enhanced electronic conductivity and low volume change of silicon powder during cycling by carbon coating.